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1.发明公开sp sp 3 /sp BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF 有权SP SP 3 /斯普·邦德-氮化硼薄膜-SELF WITH好处发射电场电子，PROCESS FOR THEREOF AND USE PRODUCING的特征的SHOW形成最终的表面形状
公开(公告)号：EP1670015A4
公开(公告)日：2007-02-21
申请号：EP04772724
申请日：2004-08-27
Applicant: NAT INST FOR MATERIALS SCIENCE
Inventor： KOMATSU SHOJIRO , MORIYOSHI YUSUKE , SHIMIZU YOSHIKI , OKADA KATSUYUKI
CPC classification number: H01J1/304 , C23C16/342 , C23C16/482 , H01J9/025 , H01J2201/30446 , Y10T428/24355
Abstract: A method for preparing an sp bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300°C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof.
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