公开(公告)号：JP2001230213A

公开(公告)日：2001-08-24

申请号：JP2000035726

申请日：2000-02-14

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： OGURA MASAHIKO ,  HASEGAWA MASATAKA ,  KOBAYASHI NAOTO

IPC: C30B29/04 ,  C22F3/00 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To provide a method for annealing diamond by which the damaged inside of a diamond monocrystal caused by ion implantation or other processes can be restored at a low temperature. SOLUTION: In this method for annealing diamond in which a defective layer generated in the diamond monocrystal at the time of injecting an additional element into the diamond crystal is restored through heat treatment, the temperature of the heat treatment is adjusted to 600-1,100 deg.C, and the inside of the diamond crystal is irradiated with a helium ion beam by adjusting the ion irradiation energy of the ion beam to 40-100 keV.

公开(公告)号：JP2001168053A

公开(公告)日：2001-06-22

申请号：JP34541099

申请日：1999-12-03

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： HASEGAWA MASATAKA ,  NAKADA JOJI ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  OGUSHI HIDEYO ,  TAKEUCHI DAISUKE

IPC: H01L21/263 ,  C30B31/22 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To make ion-implanted diamond single crystal activated in n-type electrically in an annealing step. SOLUTION: In an annealing method, an amorphous layer and a defective layer generated when impurity atoms (M) is implanted into diamond single crystal 1 are restored by heat treatment. During the heat treatment, ion beam is cast and the impurity atoms are implanted to a position of substitution to activate the diamond single crystal electrically.

公开(公告)号：DE60035747D1

公开(公告)日：2007-09-13

申请号：DE60035747

申请日：2000-08-30

Applicant: NAT INST OF ADVANCED IND SCIEN ,  JAPAN SCIENCE & TECH AGENCY

Inventor： TAKEUCHI DAISUKE ,  WATANBE HIDEYUKI ,  OKUSHI HIDEYO ,  HASEGAWA MASATAKA ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  KAJIMURA KOJI ,  YAMANAKA SADANORI

IPC: H01L21/04 ,  H01L21/329 ,  H01L29/16 ,  H01L29/861 ,  H01L31/10 ,  H01L33/34 ,  H01L33/40 ,  H01S3/16 ,  H01S5/30

公开(公告)号：DE60035747T2

公开(公告)日：2008-04-30

申请号：DE60035747

申请日：2000-08-30

Applicant: NAT INST OF ADVANCED IND SCIEN ,  JAPAN SCIENCE & TECH AGENCY

Inventor： TAKEUCHI DAISUKE ,  WATANBE HIDEYUKI ,  OKUSHI HIDEYO ,  HASEGAWA MASATAKA ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  KAJIMURA KOJI ,  YAMANAKA SADANORI

IPC: H01L21/04 ,  H01L21/329 ,  H01L29/16 ,  H01L29/861 ,  H01L31/10 ,  H01L33/34 ,  H01L33/40 ,  H01S3/16 ,  H01S5/30