公开(公告)号：JP2001274455A

公开(公告)日：2001-10-05

申请号：JP2000089516

申请日：2000-03-28

Applicant: NAT INST OF ADVANCED IND SCIEN ,  OGUSHI HIDEYO ,  TAKEUCHI DAISUKE ,  KAJIMURA KOJI

Inventor： OGUSHI HIDEYO ,  WATANABE KOSHI ,  TAKEUCHI DAISUKE ,  KAJIMURA KOJI

IPC: C30B29/04 ,  H01L21/04 ,  H01L33/00 ,  H01L33/34 ,  H01S5/32

Abstract: PROBLEM TO BE SOLVED: To surely realize a light emitting device or a laser device by effectively practically using diamond as an ultraviolet-ray emitting material. SOLUTION: The diamond semiconductor has the nonlinearly changing luminous intensity characteristic of a stimulation light.

公开(公告)号：JP2001244227A

公开(公告)日：2001-09-07

申请号：JP2000049757

申请日：2000-02-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KOSUGI RYOJI ,  ICHIMURA SHINGO ,  KUROKAWA AKIRA ,  FUKUDA KENJI ,  SENZAKI SUMIHISA ,  CHO GENSHU ,  OGUSHI HIDEYO ,  ARAI KAZUO

IPC: C30B29/36 ,  C30B33/12 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To prepare reliable semiconductor devices by a gas washing method of a semiconductor substrate surface by carrying out ozone exposure accompanying ultraviolet-ray irradiation under reduced pressure, and by effectively removing carbon impurities on the semiconductor substrate surface. SOLUTION: In the substrate pretreatment washing process when semiconductor devices are prepared, a substrate temperature is maintained from the room temperature to 1200 deg.C, and ultraviolet rays are applied onto the substrate surface for carrying out ozone exposure.

公开(公告)号：JP2001244260A

公开(公告)日：2001-09-07

申请号：JP2000049762

申请日：2000-02-25

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： KOSUGI RYOJI ,  ICHIMURA SHINGO ,  KUROKAWA AKIRA ,  CHO GENSHU ,  FUKUDA KENJI ,  SENZAKI SUMIHISA ,  OGUSHI HIDEYO ,  ARAI KAZUO

IPC: H01L21/316 ,  H01L21/04 ,  H01L21/304 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To form an interface between oxide film/silicon carbide having a small flat band shift voltage when a metal-oxide film-semiconductor (MOS) structure is formed using a silicon carbide substrate. SOLUTION: In a pre-process for processing a substrate before forming a gate oxide film on a silicon carbide semiconductor substrate, while keeping the temperature of the substrate in a range from the room temperature to 1200 degree centigrade and applying ultraviolet rays to the substrate, the substrate is exposed to ozone to form the interface between oxide film/silicon carbide.

公开(公告)号：JP2001168053A

公开(公告)日：2001-06-22

申请号：JP34541099

申请日：1999-12-03

Applicant: NAT INST OF ADVANCED IND SCIEN

Inventor： HASEGAWA MASATAKA ,  NAKADA JOJI ,  OGURA MASAHIKO ,  KOBAYASHI NAOTO ,  OGUSHI HIDEYO ,  TAKEUCHI DAISUKE

IPC: H01L21/263 ,  C30B31/22 ,  H01L21/265

Abstract: PROBLEM TO BE SOLVED: To make ion-implanted diamond single crystal activated in n-type electrically in an annealing step. SOLUTION: In an annealing method, an amorphous layer and a defective layer generated when impurity atoms (M) is implanted into diamond single crystal 1 are restored by heat treatment. During the heat treatment, ion beam is cast and the impurity atoms are implanted to a position of substitution to activate the diamond single crystal electrically.