公开(公告)号：JP2011066457A

公开(公告)日：2011-03-31

申请号：JP2010293095

申请日：2010-12-28

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： PLASS WERNER ,  JUNG CHRISTIAN ,  ALBRECHT TONY ,  STRELLER UDO

IPC: H01S5/183 ,  H01L21/00 ,  H01L33/00 ,  H01S5/02

CPC classification number: H01S5/18311 ,  H01S5/0201 ,  H01S5/3202

Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser chip which allows an aging property to be improved or the life to be prolonged, in a surface emitting semiconductor laser chip.
SOLUTION: The surface emitting semiconductor laser chip includes a semiconductor substrate which has a crystal structure with principal crystal directions 7, a beam emitting surface 4, and sides 5 laterally delimiting the semiconductor substrate 1. In the chip, at least one of the sides 5 is disposed obliquely with respect to the principal crystal directions 7.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种表面发射半导体激光芯片，其在表面发射半导体激光器芯片中提供允许老化性能提高或延长寿命的表面发射半导体激光器芯片。 解决方案：表面发射半导体激光器芯片包括具有主晶体方向7的晶体结构，光束发射表面4和横向限定半导体衬底1的侧面5的半导体衬底。在芯片中，至少一个 侧面5相对于主晶体方向7倾斜地配置。版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2004072098A

公开(公告)日：2004-03-04

申请号：JP2003204627

申请日：2003-07-31

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semikonductors GmbH

Inventor： PLASS WERNER ,  JUNG CHRISTIAN ,  ALBRECHT TONY ,  STRELLER UDO

IPC: H01L21/00 ,  H01L33/00 ,  H01S5/02 ,  H01S5/183

CPC classification number: H01S5/18311 ,  H01S5/0201 ,  H01S5/3202

Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting laser chip with improved aging characteristics or an extended life, in the surface emitting laser chip provided with a semiconductor base substrate comprising a crystal structure having a crystal main direction 7, a beam outgoing surface 4 and a side surface 5 forming the semiconductor base substrate 1 in a lateral direction.
SOLUTION: The semiconductor laser chip is arranged so that at least one side surface 5 is aslant to the crystal main direction 7.
COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：为了提供具有改善的老化特性或延长寿命的表面发射激光器芯片，在具有包括具有晶体主方向7的晶体结构的半导体基底基板的表面发射激光器芯片中， 表面4和在横向上形成半导体基底基板1的侧表面5。 解决方案：半导体激光芯片布置成使得至少一个侧表面5与晶体主方向7相对。版权所有（C）2004，JPO

公开(公告)号：DE10234976A1

公开(公告)日：2004-02-12

申请号：DE10234976

申请日：2002-07-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STRELLER UDO ,  PLASS WERNER ,  JUNG CHRISTIAN ,  ALBRECHT TONY

IPC: H01L21/00 ,  H01L33/00 ,  H01S5/02 ,  H01S5/183

Abstract: Surface emitting semiconductor laser chip comprises a semiconductor body (1) having a crystal structure with main directions (7), a radiation collision surface (4) and side surfaces (5) laterally delimiting the semiconductor body. At least one side surface is arranged at a slanted angle to the crystal main directions. An Independent claim is also included for a process for the production of the surface emitting semiconductor laser chip.