公开(公告)号：WO2007087769A3

公开(公告)日：2007-09-20

申请号：PCT/DE2006001617

申请日：2006-09-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  AHLSTEDT MAGNUS ,  EISSLER DIETER ,  WALTER ROBERT ,  WIRTH RALF

Inventor： AHLSTEDT MAGNUS ,  EISSLER DIETER ,  WALTER ROBERT ,  WIRTH RALF

IPC: H01L31/0224 ,  H01L33/00 ,  H01L33/42 ,  H01S5/042

CPC classification number: H01L31/022466 ,  H01L31/103 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/42 ,  H01L2224/48463 ,  H01S5/0421 ,  Y02E10/50

Abstract: An optoelectronic semiconductor component with a semiconductor body (10) and a current spreading layer (3) is disclosed. The current spreading layer (3) is applied at least on parts of the semiconductor body (10). The current spreading layer (3) contains a metal (1) that forms a transparent, electroconductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from the side of the current spreading layer (3) facing the semiconductor body (10) to the side of the current spreading layer (3) away from the semiconductor body (10). Also disclosed is a method for producing this type of semiconductor component.

Abstract translation: 提供了一种具有一半导体主体（10），和一个电流扩散层（3）的光电子半导体器件。 电流扩散层（3）至少在所述半导体主体（10）上的地方使用。 电流扩散层（3）包含一个金属（1）形成在电流扩散层（2）透明导电性的金属氧化物，和浓度（x）的金属（1）的从所述半导体主体增加（10）侧上面向 背离由后电流扩散层（3）的距离所述半导体主体（10）侧。 此外，提供了一种制造这种半导体器件的方法。

公开(公告)号：DE502006005304D1

公开(公告)日：2009-12-17

申请号：DE502006005304

申请日：2006-09-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： AHLSTEDT MAGNUS ,  EISSLER DIETER ,  WALTER ROBERT ,  WIRTH RALF

IPC: H01L31/0224 ,  H01L31/103 ,  H01L31/18 ,  H01L33/00 ,  H01L33/42 ,  H01S5/042

Abstract: Semi-conductor unit has semi-conductor base (10) at least partly laid on a current expansion layer (3). Layer contains metal (1) which forms a transparent conductive metal oxide (2). The concentration of metal decreases moving from the side of the expansion layer facing the semi-conductor base to the side of the layer turned away from the semi-conductor base. Method to make semi-conductor part involves firstly putting on metal layer on the base, secondly putting on a metal oxide on the metal layer and lastly heat treating the layers to produce the current expansion layer.