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    Light-emitting semiconductor chip and method for manufacturing semiconductor chip of this type
    1.
    发明专利
    Light-emitting semiconductor chip and method for manufacturing semiconductor chip of this type 审中-公开
    用于制造这种类型的半导体芯片的发光半导体芯片和方法

    公开(公告)号：JP2005244245A

    公开(公告)日：2005-09-08

    申请号：JP2005054738

    申请日：2005-02-28

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： STEIN WILHELM ,  VOELKL JOHANNES ,  WALTER ROBERT ,  KUS OLIVER ,  ZEISEL ROLAND

    IPC: H01L33/44 ,  H01L33/00

    CPC classification number: H01L33/44

    Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting semiconductor chip 1 which comprises an array 3 of semiconductor layers containing an activity layer 2 which forms electromagnetic radiation, and a passivation layer 12, disposed in the exit side of the array of the layers and which enables radiation emission to be adjusted and set to a target range during the manufacturing period to be more simple and lower cost than in the conventional technology. SOLUTION: The passivation layer has partially absorbing properties, and the transmittance to the radiation emitted from the array of the semiconductor layers during the operation of the semiconductor chip, can be adjusted during the manufacturing period of the passivation layer. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 解决的问题：提供一种发光半导体芯片1，其包括包含形成电磁辐射的活性层2的半导体层阵列3和钝化层12，该钝化层设置在阵列的出射侧 使得能够在制造期间将辐射调节和设定为目标范围的层比现有技术更简单且更低的成本。 解决方案：钝化层具有部分吸收特性，并且可以在钝化层的制造周期期间调整在半导体芯片的操作期间从半导体层的阵列发射的辐射的透射率。 版权所有（C）2005，JPO＆NCIPI

    OPTOELECTRONIC SEMICONDUCTOR CHIP
    3.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 审中-公开
    光电子半导体芯片

    公开(公告)号：WO2012159615A3

    公开(公告)日：2013-05-23

    申请号：PCT/DE2012100118

    申请日：2012-04-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  MAUTE MARKUS ,  ENGL KARL ,  TAEGER SEBASTIAN ,  WALTER ROBERT ,  STOCKER JOHANNES

    Inventor： MAUTE MARKUS ,  ENGL KARL ,  TAEGER SEBASTIAN ,  WALTER ROBERT ,  STOCKER JOHANNES

    IPC: H01L33/38 ,  H01L33/40 ,  H01L33/42

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to an optoelectronic semiconductor chip (10), which comprises a semiconductor body (1) made of semiconductor material, a p-contact layer (21a) and an n-contact layer (2). The semiconductor body (1) comprises an active layer (1a) provided for generating radiation. The semiconductor body has a p-side (1c) and an n-side (1b), between which the active layer (1a) is arranged. The p-contact layer (21a) is provided for electrical contacting of the p-side (1c). The n-contact layer (2) is provided for electrical contacting of the n-side (1b). The n-contact layer (2) contains a TCO layer (2a) and a mirror layer (2b), wherein the TCO layer (2a) is arranged between the n-side (1b) of the semiconductor body (1) and the mirror layer (2b).

    Abstract translation: 提供了一种光电子半导体芯片（10），包括半导体材料的半导体主体（1），p型接触层（21a）和一个n型接触层（2）。 半导体本体（1）具有用于产生辐射活性层（LA）中的开口。 该半导体主体包括一p侧（1c）和n侧（1b）中，活性层（LA）被布置在它们之间。 p接触层（21a）的电接触的p侧（1c）中被提供。 提供了一种用于在n侧（1b）的电接触n型接触层（2）。 的n型接触层（2）含有（1b）的（2b）中设置在所述半导体主体（1）和镜层的n侧之间的TCO层（2a）和镜面层（2b）中，其中，所述TCO层（2a）的 是。

    OPTOELECTRONIC SEMICONDUCTOR BODIES HAVING A REFLECTIVE LAYER SYSTEM
    4.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR BODIES HAVING A REFLECTIVE LAYER SYSTEM 审中-公开
    具有反射层体系光电子半导体本体

    公开(公告)号：WO2010125028A2

    公开(公告)日：2010-11-04

    申请号：PCT/EP2010055546

    申请日：2010-04-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  WALTER ROBERT ,  GROLIER VINCENT ,  SCHMAL MICHAEL ,  PERZLMAIER KORBINIAN ,  EBERHARD FRANZ

    Inventor： WALTER ROBERT ,  GROLIER VINCENT ,  SCHMAL MICHAEL ,  PERZLMAIER KORBINIAN ,  EBERHARD FRANZ

    IPC: H01L31/0232

    CPC classification number: H01L31/02161 ,  H01L31/0232 ,  H01L33/46 ,  H01S5/18369

    Abstract: The invention relates to an optoelectronic semiconductor body (1) having an active semiconductor layer sequence (10) and a reflective layer system (20). The reflective layer system (20) is provided with a first radiation-permeable layer (21) abutting the semiconductor layer sequence (10), and with a metal layer (23) on the side of the first radiation-permeable layer (21) facing away from the semiconductor layer sequence (10). The first radiation-permeable layer (21) includes a first dielectric material. Between the first radiation-permeable layer (21) and the metal layer (23), a second radiation-permeable layer (22) is arranged containing an adhesion-improving material. The metal layer (23) is applied directly on the adhesion-improving material. The adhesion-improving material differs from the first dielectric material and is selected such that the adhesion on the metal layer (23) is improved over the adhesion on the first dielectric material.

    Abstract translation: 提供了一种具有有源半导体层序列（10）和反射层系统（20）的光电子半导体本体（1）。 反射层系统（20）具有与半导体层序列（10）相邻的第一辐射透射层（21）和金属层（23），该半导体层序列的（10）从所述第一辐射透射层（21）背向侧。 第一辐射透射层（21）包含第一介电材料。 第一辐射透射层（21）和金属层（23）之间布置含粘接性提高材料的第二辐射透射层（22）。 所述金属层（23）被直接施加到附着改进的材料。 所述粘合促进材料是从所述第一电介质材料不同，并且被选择为使得所述金属层（23）的附着力相比，粘附到所述第一介电材料的改善。

    RADIATION-EMITTING BODY AND METHOD FOR PRODUCING A RADIATION-EMITTING BODY
    5.
    发明申请
    RADIATION-EMITTING BODY AND METHOD FOR PRODUCING A RADIATION-EMITTING BODY 审中-公开
    辐射发射体和产生辐射发射体的方法

    公开(公告)号：WO2009083001A2

    公开(公告)日：2009-07-09

    申请号：PCT/DE2008002136

    申请日：2008-12-19

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  EBERHARD FRANZ ,  WINDISCH REINER ,  WALTER ROBERT ,  SCHMAL MICHAEL ,  AHLSTEDT MAGNUS

    Inventor： EBERHARD FRANZ ,  WINDISCH REINER ,  WALTER ROBERT ,  SCHMAL MICHAEL ,  AHLSTEDT MAGNUS

    IPC: H01L33/22 ,  H01L33/46

    CPC classification number: H01L33/22 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention relates to a radiation-emitting body, comprising a layer sequence, having an active layer (10) for producing electromagnetic radiation, a reflection layer (50), which reflects the radiation produced, and at least one intermediate layer (40), which is disposed between the active layer (10) and the reflection layer (50). To this end, the active layer (10) on an interface (15) directed toward the reflection layer (50) comprises a rough region, and the reflection layer (50) is substantially planar on an interface (45) directed toward the active layer (10). The invention further relates to a method for producing a radiation-emitting body, wherein a layer sequence is configured on a substrate having an active layer (10) for producing electromagnetic radiation. To this end, an interface (15) is roughened on the active layer (10) and at least one intermediate layer (40) and a reflection layer (50) are configured.

    Abstract translation: 本发明涉及一种包括一系列层，包括用于产生电磁辐射的反射层的有源层（10）发射辐射的本体（50），其反映所产生的辐射，并用至少一个中间层（40）（所述活性层之间 10）和反射层（50）。 在这种情况下，反射层（50）在有源层（10）定向边界表面（15）具有粗糙，和反射层（50）被引导在有源层（10）界面（45）基本上是平面的。 本发明还涉及一种用于制造辐射发射体的方法，其中在具有用于产生电磁辐射的活性层（10）的基板上形成层序列。 这里，活性层（10）上的界面（15）粗糙化并形成至少一个中间层（40）和反射层（50）。

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH CURRENT SPREADING LAYER
    6.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH CURRENT SPREADING LAYER 审中-公开
    WITH电流扩展层的光电子半导体器件

    公开(公告)号：WO2007087769A3

    公开(公告)日：2007-09-20

    申请号：PCT/DE2006001617

    申请日：2006-09-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  AHLSTEDT MAGNUS ,  EISSLER DIETER ,  WALTER ROBERT ,  WIRTH RALF

    Inventor： AHLSTEDT MAGNUS ,  EISSLER DIETER ,  WALTER ROBERT ,  WIRTH RALF

    IPC: H01L31/0224 ,  H01L33/00 ,  H01L33/42 ,  H01S5/042

    CPC classification number: H01L31/022466 ,  H01L31/103 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/42 ,  H01L2224/48463 ,  H01S5/0421 ,  Y02E10/50

    Abstract: An optoelectronic semiconductor component with a semiconductor body (10) and a current spreading layer (3) is disclosed. The current spreading layer (3) is applied at least on parts of the semiconductor body (10). The current spreading layer (3) contains a metal (1) that forms a transparent, electroconductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from the side of the current spreading layer (3) facing the semiconductor body (10) to the side of the current spreading layer (3) away from the semiconductor body (10). Also disclosed is a method for producing this type of semiconductor component.

    Abstract translation: 提供了一种具有一半导体主体（10），和一个电流扩散层（3）的光电子半导体器件。 电流扩散层（3）至少在所述半导体主体（10）上的地方使用。 电流扩散层（3）包含一个金属（1）形成在电流扩散层（2）透明导电性的金属氧化物，和浓度（x）的金属（1）的从所述半导体主体增加（10）侧上面向 背离由后电流扩散层（3）的距离所述半导体主体（10）侧。 此外，提供了一种制造这种半导体器件的方法。

    9.
    发明专利
    未知

    公开(公告)号：DE502006005304D1

    公开(公告)日：2009-12-17

    申请号：DE502006005304

    申请日：2006-09-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： AHLSTEDT MAGNUS ,  EISSLER DIETER ,  WALTER ROBERT ,  WIRTH RALF

    IPC: H01L31/0224 ,  H01L31/103 ,  H01L31/18 ,  H01L33/00 ,  H01L33/42 ,  H01S5/042

    Abstract: Semi-conductor unit has semi-conductor base (10) at least partly laid on a current expansion layer (3). Layer contains metal (1) which forms a transparent conductive metal oxide (2). The concentration of metal decreases moving from the side of the expansion layer facing the semi-conductor base to the side of the layer turned away from the semi-conductor base. Method to make semi-conductor part involves firstly putting on metal layer on the base, secondly putting on a metal oxide on the metal layer and lastly heat treating the layers to produce the current expansion layer.

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