公开(公告)号：JP2011044754A

公开(公告)日：2011-03-03

申请号：JP2010270445

申请日：2010-12-03

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： ZOELFL MICHAEL ,  STEIN WILHELM ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L31/00 ,  H01L33/38

CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/387

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip structure allowing radiation emission to be adjusted and set in a target region during a manufacturing period.
SOLUTION: The brightness of this radiation-emitting semiconductor chip is adjusted and set by putting one or more absorptive and/or partially-insulating brightness-adjusting/setting layers (12, 6, 9) on a radiation output-combining surface (10) of a wafer during a manufacturing period of the semiconductor chip after measurement of radiation-emission characteristics of a radiation-emitting semiconductor layer column (3) of the wafer.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供在制造期间允许辐射发射被调整和设定在目标区域中的半导体芯片结构。 解决方案：通过将一个或多个吸收和/或部分绝缘的亮度调节/设定层（12,6,9）放置在辐射输出组合表面上来调节和设置该发射辐射的半导体芯片的亮度 （10）在晶片的辐射发射半导体层柱（3）的辐射发射特性的测量之后的半导体芯片的制造周期期间。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2005026688A

公开(公告)日：2005-01-27

申请号：JP2004191785

申请日：2004-06-29

Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

Inventor： ZOELFL MICHAEL ,  STEIN WILHELM ,  WIRTH RALPH

IPC: H01L31/00 ,  H01L33/14 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/145 ,  H01L33/387

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip structure which enables radiation emission to be adjusted and set to a target range during the manufacturing period of the semiconductor chip. SOLUTION: The brightness of a radiation emission semiconductor chip is adjusted and set in the manufacturing period of the semiconductor chip after measuring the radiation emission property of a wafer's radiation emission semiconductor layer row (3), by providing to the wafer's radiation outputting bonded surface (10) one or a plurality of absorbing and/or partially insulating brightness adjusting and setting layers (12, 6, and 9). COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：提供半导体芯片结构，其能够在半导体芯片的制造周期期间将辐射发射调节并设定为目标范围。 解决方案：通过向晶片的辐射输出提供测量晶片的辐射发射半导体层行（3）的辐射发射特性之后，在半导体芯片的制造周期中调整和设置辐射发射半导体芯片的亮度 接合表面（10）一个或多个吸收和/或部分绝缘的亮度调节和设定层（12,6和9）。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：DE10329398A1

公开(公告)日：2005-02-03

申请号：DE10329398

申请日：2003-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  ZOELFL MICHAEL ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: Radiation-emitting semiconductor chip (1) comprises a brightness adjusting layer (12) arranged between a connecting region (4) and a current injection region (5) on a radiation coupling surface (10) of a semiconductor layer sequence (3) to absorb a part of the radiation produced in the semiconductor layer sequence. Independent claims are also included for: (a) process for adjusting the brightness of a radiation-emitting semiconductor chip; and (b) process for the production of a semiconductor chip.