公开(公告)号：CA2015396A1

公开(公告)日：1990-10-28

申请号：CA2015396

申请日：1990-04-25

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E ,  LAMBERT NICOLAAS ,  VAN GORKOM GERARDUS G P

IPC: H01J1/304 ,  H01J1/308 ,  H01J3/02 ,  H01J3/18 ,  H01J29/48 ,  H01J29/62 ,  H01J31/12 ,  H01J1/30

Abstract: PHN 12.909 20-07-1989 . Device for generating electrons, and display device. A planar electron-optical lens is obtained on a semiconductor cathode surface by providing an extra electrode (16) around the gate electrode (14). Dependent on the applied voltage, this configuration operates, for example, as a positive lens which supplies parallel beams without dispersion, suitable for thin, flat display devices. A large positioning tolerance is obtained due to the inherent magnification of the beam diameter in the semiconductor device, while a grid can be dispensed with.

公开(公告)号：CA1257364A

公开(公告)日：1989-07-11

申请号：CA509660

申请日：1986-05-21

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E ,  NOORLAG DATE J W

IPC: H01L31/09 ,  G01J1/02 ,  G01T1/24 ,  G02B7/09 ,  G11B7/09 ,  G11B7/13 ,  G11B7/135 ,  H01L27/144 ,  H01L31/02 ,  H01L31/0352 ,  G02B7/11 ,  H01L27/14

Abstract: 22 In a position-sensitive radiation detector having a semiconductor body which at least in the operating condition comprises a high-ohmic zone between two radiation-sensitive diodes provided with connection electrodes, a high-ohmic zone between two semiconductor zones provided with connection electrodes, can be apparently centred by varying the voltages at the connection electrodes in such a manner that the photocurrents through the diodes are the same. The signals derived therefrom can be supplied to measuring and control systems for, for example, optical reading and writing apparatus and other measuring apparatus.

公开(公告)号：CA1232086A

公开(公告)日：1988-01-26

申请号：CA483813

申请日：1985-06-12

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E ,  VAN HAL HENRICUS A M ,  TOLNER HARM ,  VAN GORKOM GERARDUS G P

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01L49/00

Abstract: 13 Device for electron emission provided with an electronemitting body having a layer of material reducing the work function and method of forming such a layer of material reducing the work function. An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN3 (21), is present in a container constituted by a semiconductor body (20), which is provided, if required, with a depression (33), while one or more pn junctions (23) act as a heating diode. Upon heating, the desired material (for example Cs) is released and is deposited on an electronemitting surface.

公开(公告)号：CA1194195A

公开(公告)日：1985-09-24

申请号：CA406926

申请日：1982-07-08

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E ,  VAN ROSMALEN GERARD E

IPC: H01L27/14 ,  G02B7/28 ,  G03B3/00 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/10

Abstract: Device for detecting radiation and semiconductor device for use in such a device. In a radiation-sensitive semiconductor element which is divided into a number of sub-elements, the surface potential in the sub-elements varies in the case of incident radiation as a result of charge carriers generated by the radiation. As soon as an adjustable threshold value of this potential is reached in one or more of the subelements, a current starts to flow which is signalled by means of a detector and a detection unit. Because the speed of reaching the threshold value depends on the intensity of the radiation, the time measured between the adjustment of the threshold value and the signalling of the current is a measure of the radiation intensity. By means of such a semiconductor element, the associated detection unit and extra electronics, if any, the energy or the cross-section of a beam can be determined and be readjusted; if necessary. Such a semiconductor device can also be used very readily for focusing, for example in VLP apparatus.

公开(公告)号：CA1081312A

公开(公告)日：1980-07-08

申请号：CA277051

申请日：1977-04-26

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02

Abstract: A field emission device and method of forming same, comprising a substrate on which at least one conical electrode is provided, which substrate, with the exception of the proximity of the tip of the electrode, is covered with a layer of a dielectric material on which a conductive layer is present at least locally, in which in order to form an integrated accelerating electrode the conductive layer extends in the direction of the punctiform tip of the electrode to beyond the dielectric layer and shows an aperture above the tip so that the conductive layer forms a cap-shaped accelerating electrode surrounding the conical electrode.

公开(公告)号：CA1071287A

公开(公告)日：1980-02-05

申请号：CA272580

申请日：1977-02-24

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E

IPC: H01J29/45 ,  H01L31/08 ,  H01J29/36

Abstract: The invention relates to a camera tube, for example a television camera tube, having a semiconductor target which on the side to be scanned by an electron beam comprises a mosaic of electrically conductive regions each determining a picture element and separated from the semiconductor plate by an electrically insulating layer, and a resistive layer extending over the mosaic and the insulating layer. According to the invention the camera tube is characterized in that the resistive layer contacts the semiconductor surface via an aperture in the insulating layer present in each picture element and has a RC time between the scanning time of a picture element and the scanning time of the whole target.

公开(公告)号：CA1254307A

公开(公告)日：1989-05-16

申请号：CA501650

申请日：1986-02-12

Applicant: PHILIPS NV

Inventor： VAN GORKOM GERARDUS G P ,  HOEBERECHTS ARTHUR M E ,  VAN DER MAST KAREL D ,  TOLNER HARM

IPC: H01J1/30 ,  H01J1/308 ,  H01J37/073 ,  H01J3/02 ,  H01J37/07

Abstract: PHN 11.233 10 04.03.1985 Electron beam apparatus comprising a semiconductor electron emitter. An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.

公开(公告)号：CA1243103A

公开(公告)日：1988-10-11

申请号：CA458633

申请日：1984-07-11

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E

IPC: C04B24/12 ,  C04B24/16 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/10 ,  H01L31/103 ,  H01L31/107

Abstract: : Radiation-sensitive semiconductor device. The capacitance of a radiation-sensitive diode can be considerably reduced by giving it the form of a pn junction (7) between a first semiconductor region (4) and a layer-shaped semiconductor zone (5,6), which in operation is fully depleted. The speed of such a diode is favourably influenced by the choice or the shape of the geometry of the layer-shaped zone (5,6). When the latter is formed with parts (6) decreasing in width of thickness, an electric field is produced in these parts which accelerates the transport of minority charge carriers to a central contact (13).

公开(公告)号：CA1234411A

公开(公告)日：1988-03-22

申请号：CA473433

申请日：1985-02-01

Applicant: PHILIPS NV

Inventor： VAN DER MAST KAREL D ,  HOEBERECHTS ARTHUR M E ,  VAN GORKOM GERARDUS G P

IPC: H01J29/04 ,  H01J1/30 ,  H01J1/308 ,  H01J31/12 ,  H01J31/38 ,  H01J37/073

Abstract: Semiconductor device for producing an electron beam. In a semiconductor cathode, the electron-emitting part of a pn junction (5) is provided in the tip of a projecting portion (10) of the semiconductor surface (2) which is situated within an opening 8 in an insulating layer (7) on which an acceleration electrode (9) is disposed. Due to the increased electric field near the tip, a reduction of the work function (Schottky effect) is obtained. As a result, cathodes can be realized in which a material (14) reducing the work function, such as caesium, may be either dispensed with or replaced, if required, by another material, which causes lower work function, but is less volatile. The field strength remains so low that no field emission occurs and serarate cathodes can be driven individually, which is favourable for applications in electron microscopy and electron lithography.

公开(公告)号：CA1214489A

公开(公告)日：1986-11-25

申请号：CA422774

申请日：1983-03-03

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E

IPC: H01J37/28 ,  H01J29/04 ,  H01J29/86 ,  H01J29/90 ,  H01J31/08 ,  H01J31/38

Abstract: 16 : A semiconductor device comprising one or more cold cathodes is mounted by means of a weld on a support of a ceramic material so that areas at which emission occurs are situated opposite the openings in the support. Such a construction has various advantages. If the support is the end wall of a vacuum tube, the semiconductor body can be cooled in a simple manner, while moreover semiconductor zones can be connected directly. This results in a saving of lead-through pins in the vacuum tube, which especially in the case of several emission points increases the reliability of the vacuum. Another advantage consists in that the cathodes can be connected through the weld to a common connection on the support, which results in that the various emission points are applied to substantially the same surface potential, so that also the electron-optical behaviour is uniform for electrons which are generated at various emission areas.