公开(公告)号：CA1232086A

公开(公告)日：1988-01-26

申请号：CA483813

申请日：1985-06-12

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR M E ,  VAN HAL HENRICUS A M ,  TOLNER HARM ,  VAN GORKOM GERARDUS G P

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01L49/00

Abstract: 13 Device for electron emission provided with an electronemitting body having a layer of material reducing the work function and method of forming such a layer of material reducing the work function. An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN3 (21), is present in a container constituted by a semiconductor body (20), which is provided, if required, with a depression (33), while one or more pn junctions (23) act as a heating diode. Upon heating, the desired material (for example Cs) is released and is deposited on an electronemitting surface.

公开(公告)号：GB2162681B

公开(公告)日：1988-06-22

申请号：GB8514625

申请日：1985-06-10

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR MARIE EUGEN ,  VAN HAL HENRICUS ALBERTUS MARI ,  VAN GORKOM GERARDUS GEGORIUS P ,  TOLNER HARM

IPC: H01J1/13 ,  H01J1/308 ,  H01J9/02 ,  H01J9/04 ,  C23C14/26 ,  H01J9/20

公开(公告)号：CA1254307A

公开(公告)日：1989-05-16

申请号：CA501650

申请日：1986-02-12

Applicant: PHILIPS NV

Inventor： VAN GORKOM GERARDUS G P ,  HOEBERECHTS ARTHUR M E ,  VAN DER MAST KAREL D ,  TOLNER HARM

IPC: H01J1/30 ,  H01J1/308 ,  H01J37/073 ,  H01J3/02 ,  H01J37/07

Abstract: PHN 11.233 10 04.03.1985 Electron beam apparatus comprising a semiconductor electron emitter. An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.

公开(公告)号：GB2162681A

公开(公告)日：1986-02-05

申请号：GB8514625

申请日：1985-06-10

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR MARIE EUGEN ,  VAN HAL HENRICUS ALBERTUS MARI ,  VAN GORKOM GERARDUS GEGORIUS P ,  TOLNER HARM

IPC: H01J1/13 ,  H01J1/308 ,  H01J9/02 ,  H01J9/04 ,  H01J9/20

Abstract: An electron-emitting surface is provided with a coating of a material reducing the electron work function thereof by using a semiconductor body 20 which forms a heater element for releasing the material by decomposition or from a mixture producing the material, which product to be decomposed or mixture 21 is located on or in the semiconductor body 20. For example, a mass 21 of CsN3 may be located in a depression 33 in a p-n junction diode 20 which is reverse biassed to generate heat which releases Cs for depositing on and activating a semiconductor cathode (Figure 1, not shown). The depression 33 may be protected from attack by the Cs by a silicon oxide layer 30 and the remaining surface 32 protected by silicon nitride 34. The electron-emitter thus produced, e.g. of thermionic, semiconductor, field or photo cathode type, may be used in camera or display tubes, image converters, photomultipliers, microscopy, lithography, Auger spectrometry or thermionic converters.

公开(公告)号：DE3520635A1

公开(公告)日：1985-12-19

申请号：DE3520635

申请日：1985-06-08

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR MARIE EUGEN ,  TOLNER HARM ,  HAL HENRICUS ALBERTUS MARIA VA ,  GORKOM GERARDUS GEGORIUS PETRU

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01J29/04 ,  H01J31/20 ,  H01J31/28

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

公开(公告)号：DE3666897D1

公开(公告)日：1989-12-14

申请号：DE3666897

申请日：1986-03-20

Applicant: PHILIPS NV

Inventor： TOLNER HARM ,  FEUERBAM HANS-PETER

IPC: H01J37/06 ,  H01J37/04 ,  H01J37/065 ,  H01J37/067 ,  H01J37/147

Abstract: A beam blanking device 4 in an electron beam apparatus is mechanically integral with an anode 3 of the apparatus. As a result, these components can be exactly positioned with respect to one another and a readily exchangeable unity is obtained. Preferably the anode/beam blanking unit with the electron gun 30 are combined in order to obtain a mechanical unity which can be mounted in the electron beam apparatus so as to be readily removable as one unit. For apparatus operating with a high potential of at the utmost about 1 KeV with decreased dimensions of the construction an extremely exact positioning and high frequency control can be realised.

公开(公告)号：FR2566174B1

公开(公告)日：1989-09-22

申请号：FR8508794

申请日：1985-06-11

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR MARIE EUGEN ,  HAL HENRICUS ALBERTUS MARIA VA ,  TOLNER HARM ,  GORKOM GERARDUS GEGORIUS PETRU

IPC: H01J1/13 ,  H01J1/308 ,  H01J1/30 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01J1/02

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

公开(公告)号：FR2566174A1

公开(公告)日：1985-12-20

申请号：FR8508794

申请日：1985-06-11

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR MARIE EUGEN ,  HAL HENRICUS ALBERTUS MARIA VA ,  TOLNER HARM ,  GORKOM GERARDUS GEGORIUS PETRU

IPC: H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/30 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01J1/02

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

公开(公告)号：AU603762B2

公开(公告)日：1990-11-29

申请号：AU5338486

申请日：1986-02-11

Applicant: PHILIPS NV

Inventor： HOEBERECHTS ARTHUR MARIE EUGEN ,  TOLNER HARM ,  MAST KAREL DIEDERICK VAN DER ,  GORKOM GERARDUS GEGORIUS PETRU

IPC: H01J1/30 ,  H01J1/308 ,  H01J37/073 ,  H01J37/06

Abstract: An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.