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    METHOD AND APPARATUS FOR EXPOSING PHOTORESISTS USING PROGRAMMABLE MASKS
    1.
    发明申请
    METHOD AND APPARATUS FOR EXPOSING PHOTORESISTS USING PROGRAMMABLE MASKS 审中-公开
    使用可编程面膜曝光光电的方法和装置

    公开(公告)号：WO2003044597A1

    公开(公告)日：2003-05-30

    申请号：PCT/US2002/036942

    申请日：2002-11-18

    Applicant: PIXELLIGENT TECHNOLOGIES LLC ,  CASE, Andrew ,  COOPER, Gregory, D. ,  FLEET, Erin

    Inventor： CASE, Andrew ,  COOPER, Gregory, D. ,  FLEET, Erin

    IPC: G03B27/42

    CPC classification number: G03F7/70466 ,  G03F7/70291

    Abstract: Method for exposing photo resists using programmable masks (74) increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure (52) with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths or light (80, 82), two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.

    Abstract translation: 使用可编程掩模（74）曝光光刻胶的方法提高了成像分辨率，以通过光学平版印刷技术在光致抗蚀剂涂覆的硅晶片上提供由非常小的特征制成的全密集的集成电路图案。 通过与可编程或常规掩模的重叠曝光（52）创建小特征。 可以使用不同于两种不同波长或光（80,82）的阻挡光刻胶，需要两个波长的光来改变溶解度的双色光致抗蚀剂，并且可以一次仅通过吸收两个光子来改变溶解度的双光子光致抗蚀剂。

    BLOCK CO-POLYMER PHOTORESIST
    2.
    发明申请
    BLOCK CO-POLYMER PHOTORESIST 审中-公开
    块状聚合物胶片

    公开(公告)号：WO2014123582A1

    公开(公告)日：2014-08-14

    申请号：PCT/US2013/054681

    申请日：2013-08-13

    Applicant: PIXELLIGENT TECHNOLOGIES, LLC

    Inventor： COOPER, Gregory, D. ,  WEHRENBERG, Brian, L.

    IPC: H01L21/027 ,  G03F7/004

    CPC classification number: H01L21/0274 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/38 ,  H01L21/0271 ,  H01L21/324 ,  H01L21/82 ,  H01L27/04 ,  H01L29/06

    Abstract: An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.

    Abstract translation: 通过在衬底上沉积钉扎层来制成集成电路。 在钉扎层上形成嵌段共聚物光致抗蚀剂。 嵌段共聚物具有在至少一些退火条件下不自组装的两个嵌段A和B。 处理暴露的嵌段共聚物光致抗蚀剂以在暴露的所选区域中切割至少一些嵌段共聚物键。 处理暴露的钉扎层以产生化学外延图案以引导嵌段共聚物的局部自组装。

    ADVANCED LIGHT EXTRACTION STRUCTURE
    5.
    发明申请
    ADVANCED LIGHT EXTRACTION STRUCTURE 审中-公开
    先进的光提取结构

    公开(公告)号：WO2015006276A1

    公开(公告)日：2015-01-15

    申请号：PCT/US2014/045671

    申请日：2014-07-08

    Applicant: PIXELLIGENT TECHNOLOGIES LLC

    Inventor： CHEN, Zhiyun ,  COOPER, Gregory, D.

    IPC: H01L27/32 ,  H01L51/52

    CPC classification number: H01L51/5275 ,  H01L27/3211 ,  H01L27/3244

    Abstract: This presently disclosed technology relates to Organic Light Emitting Diodes (OLEDs), more particularly it relates to OLED display extraction and nanocomposite formulations that can be used for the light extraction structure. The OLEDs comprise, in order, an encapsulation layer or a substrate layer, an array of lenses, and an array of light emitting pixels at least partially covered by said array of lenses, wherein at least one of the lenses covers at least one of the pixel, and said lenses comprises a material with higher refractive index than the encapsulation layer or substrate layer.

    Abstract translation: 本公开的技术涉及有机发光二极管（OLED），更具体地说，涉及可用于光提取结构的OLED显示提取和纳米复合材料制剂。 OLED依次包括封装层或衬底层，透镜阵列和至少部分被所述透镜阵列所覆盖的发光像素阵列，其中透镜中的至少一个覆盖至少一个透镜 像素，并且所述透镜包括具有比封装层或衬底层更高的折射率的材料。

    ADVANCED EXPOSURE TECHNIQUES FOR PROGRAMMABLE LITHOGRAPHY
    6.
    发明申请
    ADVANCED EXPOSURE TECHNIQUES FOR PROGRAMMABLE LITHOGRAPHY 审中-公开
    可编程曝光技术的高级曝光技术

    公开(公告)号：WO2003038518A1

    公开(公告)日：2003-05-08

    申请号：PCT/US2002/034597

    申请日：2002-10-30

    Applicant: PIXELLIGENT TECHNOLOGIES LLC ,  CASE, Andrew ,  COOPER, Gregory, D. ,  FLEET, Erin

    Inventor： CASE, Andrew ,  COOPER, Gregory, D. ,  FLEET, Erin

    IPC: G03B27/42

    CPC classification number: G03F7/70466 ,  G03F7/70283 ,  G03F7/70291

    Abstract: Advanced techniques for programmable photolithography provide enhanced resolution and other aspects of a photolithography system. A combination of multiple exposures and movement of a substrate (W) relative to a programmable mask (M) in a photolithographic system accomplishes single shutter exposure overlaps to create features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Advanced timing adjustment capabilities are used to modulate the light (I) so that no unwanted features are created. Additionally, a library of shapes may be used, one shape on each pixel, with the small features of the shapes created by phase shifting. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material (P) may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask (A) may be used to engineer the wavefronts of the light striking the resist in such a manner to achieve better resolution.

    Abstract translation: 用于可编程光刻技术的高级技术提供了光刻系统的增强的分辨率和其它方面。 在光刻系统中多个曝光和相对于可编程掩模（M）的移动的组合实现单个快门曝光重叠以产生小于单个快门强度分布（即子像素分辨率）的特征。 高级时序调整功能用于调制光（I），以便不会创建不需要的功能。 另外，可以使用一个形状库，每个像素上的一个形状，具有由相移产生的形状的小特征。 图案通过掩模和抗蚀剂的相对移动的多次曝光构成，以便将每个形状从库中需要在抗蚀剂上放置。 可以将光学相移材料（P）施加到快门，以便调节单个快门强度分布，或调整相邻百叶窗的相互作用。 可以使用变迹面罩（A）来设计以抵抗抗蚀剂的光的波前来实现更好的分辨率。

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