公开(公告)号：CA2704892A1

公开(公告)日：2001-06-21

申请号：CA2704892

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G11C16/02 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：AU2271301A

公开(公告)日：2001-06-25

申请号：AU2271301

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：CA2393143A1

公开(公告)日：2001-06-21

申请号：CA2393143

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  YU NICHOLAS K ,  KHAN SAFI ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26 ,  G11C16/32

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：AT339764T

公开(公告)日：2006-10-15

申请号：AT00986483

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：CA2704893A1

公开(公告)日：2001-06-21

申请号：CA2704893

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G11C16/02 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：DE60030765T2

公开(公告)日：2007-09-13

申请号：DE60030765

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU K ,  KHAN SAFI

IPC: G06F12/06 ,  G11C7/24 ,  G06F12/00 ,  G06F21/00 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：ES2269213T3

公开(公告)日：2007-04-01

申请号：ES00986483

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/00 ,  G06F12/06 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: Sistema de memoria flash (112) que comprende: unas celdas de memoria flash dispuestas como un conjunto de macros flash (130), y unos medios de lectura durante escritura (144, 146) para escribir en una de dichas macros flash, mientras se lee simultáneamente en otra de dichas macros flash; en el que el sistema está conectado a un microprocesador (102) y en el que dichos medios de lectura durante escritura (144, 146) incluyen: unos medios de escritura (146) para escribir las señales recibidas desde el microprocesador a una macro seleccionada de dichas macros flash (130); y caracterizado porque dichos medios de lectura durante escritura incluyen además unos medios de suspensión, sensibles a la recepción de un mandato de lectura del microprocesador dirigido a dicha macro seleccionada de dichas macros flash, para suspender la operación del microprocesador hasta que los medios de escritura (146) hayan finalizado su operación, y para ejecutar el mandato de lectura.

公开(公告)号：DE60030765D1

公开(公告)日：2006-10-26

申请号：DE60030765

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU K ,  KHAN SAFI

IPC: G06F12/06 ,  G11C7/24 ,  G06F12/00 ,  G06F21/00 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：CA2704894A1

公开(公告)日：2001-06-21

申请号：CA2704894

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G11C16/02 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/06 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：US6392925B2

公开(公告)日：2002-05-21

申请号：US81818601

申请日：2001-03-26

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26 ,  G11C7/00

CPC classification number: G11C16/26 ,  G11C16/22 ,  G11C2216/22

Abstract: The flash and SRAM memory are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce overall power consumption of a mobile telephone employing the ASIC. The flash memory system includes a flash memory array configured to provide a set of individual flash macros and a flash memory controller for accessing the flash macros. The flash memory controller includes a read while writing unit for writing to one of the flash macros while simultaneously reading from another of the flash macros. By permitting read while writing, read operations need not be deferred until completion of pending write operations. The flash memory controller also includes programmable wait state registers. Each wait state register stores a programmable number of flash bus wait states associated with a portion of the flash memory. Thus, portions of flash memory subject to flash memory degradation may be programmed with a higher number of wait states than portions of memory that are not subject to degradation.

Abstract translation: 闪存和SRAM存储器嵌入到专用集成电路（ASIC）中，以提供改进的访问时间，并且还降低采用ASIC的移动电话的总体功耗。 闪存系统包括被配置为提供一组单独的闪存宏的闪存阵列和用于访问闪存宏的闪存控制器。 闪速存储器控制器包括一个写入单元，用于写入其中一个闪存宏，同时从另一个闪存宏读取。 通过在写入时允许读取，读取操作不需要延迟，直到完成等待写入操作。 闪存控制器还包括可编程等待状态寄存器。 每个等待状态寄存器存储与闪存的一部分相关联的可编程数量的闪存总线等待状态。 因此，存在闪速存储器劣化的闪存的部分可以被编程为具有比没有劣化的存储器部分更多的等待状态。