公开(公告)号：JP2012141993A

公开(公告)日：2012-07-26

申请号：JP2012024016

申请日：2012-02-07

Applicant: Qualcomm Inc ,  クゥアルコム・インコーポレイテッドQualcomm Incorporated

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUS-SEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G06F21/24 ,  G06F12/00 ,  G06F21/00 ,  G06F21/20 ,  G06F21/22 ,  G11C7/24 ,  G11C16/02 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

CPC classification number: G11C16/26 ,  G11C16/22 ,  G11C2216/22

Abstract: PROBLEM TO BE SOLVED: To improve access time of flash memory and SRAM and reduce power consumption of an ASIC-based mobile telephone.SOLUTION: The flash memory and SRAM are embedded within an application specific integrated circuit (ASIC) to provide improved access times. The flash memory system includes a flash memory array 130 configured to provide a set of individual flash macros and a flash memory controller 132 for accessing the flash macros. The flash memory controller includes a write-while-reading unit 144, 146 for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers 138, and a password register 140 providing separate passwords for different portions of the flash memory array.

Abstract translation: 要解决的问题：改善闪存和SRAM的访问时间，并降低基于ASIC的移动电话的功耗。 解决方案：闪存和SRAM嵌入到专用集成电路（ASIC）中，以提供更好的访问时间。 闪存系统包括被配置为提供一组单独的闪存宏的闪存阵列130和用于访问闪存宏的闪存控制器132。 闪速存储器控制器包括写入同时读取单元144,146，用于在同时从另一个闪存宏读取时写入闪存宏中的一个。 闪速存储器控制器还包括可编程等待状态寄存器138和密码寄存器140，为闪存阵列的不同部分提供单独的密码。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2012141994A

公开(公告)日：2012-07-26

申请号：JP2012024017

申请日：2012-02-07

Applicant: Qualcomm Inc ,  クゥアルコム・インコーポレイテッドQualcomm Incorporated

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUS-SEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/02 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

CPC classification number: G11C16/26 ,  G11C16/22 ,  G11C2216/22

Abstract: PROBLEM TO BE SOLVED: To provide a flash memory system where a boot loader is swapped into high memory such that other data and programs can be stored within low memory where they can be accessed more expediently.SOLUTION: The flash memory system includes flash memory cells and a flash memory controller 132 provided with means for partitioning the flash memory cells into high and low memory locations. The flash memory cells store a boot loader beginning at a lowest memory address of the flash memory space. The means for partitioning includes means for swapping the high and low memory locations after operations performed by the boot loader have been completed. A memory swap unit 149 is provided for swapping the high and low memory subsequent to the completion of operations performed by the boot loader.

Abstract translation: 要解决的问题：提供一种闪存系统，其中引导加载器被交换到高存储器中，使得其他数据和程序可以被存储在低内存中，从而可以更方便地访问它们。 闪存系统包括闪存单元和闪速存储器控制器132，闪存控制器132具有用于将闪存单元分成高和低存储器位置的装置。 闪存单元存储从闪存空间的最低存储器地址开始的引导加载程序。 用于分区的装置包括用于在由引导加载器执行的操作已经完成之后交换高和低存储器位置的装置。 提供存储器交换单元149，用于在由引导加载程序执行的操作完成之后交换高和低存储器。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011192290A

公开(公告)日：2011-09-29

申请号：JP2011092137

申请日：2011-04-18

Applicant: Qualcomm Inc ,  クゥアルコム・インコーポレイテッドQualcomm Incorporated

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUS-SEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/00 ,  G06F12/06 ,  G06F12/16 ,  G06F21/00 ,  G06F21/24 ,  G11C7/24 ,  G11C16/02 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

CPC classification number: G11C16/26 ,  G11C16/22 ,  G11C2216/22

Abstract: PROBLEM TO BE SOLVED: To minimize the time required for each access from a flash memory. SOLUTION: A mobile communication device includes a wait state memory register 138 for flash bus wait states that is used in using different portions of a flash memory array. The wait state specifies such the number of cycles of a flash memory bus that a flash memory access unit has to wait until a retrieval of data by a read-out operation. Different wait state values are provided in different portions of the flash memory array so as to adjust different degradation levels of the flash memory array. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：最大限度地减少每次从闪存访问所需的时间。 解决方案：移动通信设备包括用于使用闪存阵列的不同部分的闪存总线等待状态的等待状态存储器寄存器138。 等待状态指定闪速存储器访问单元必须等待直到通过读出操作检索数据的闪存总线的周期数。 在闪速存储器阵列的不同部分提供不同的等待状态值，以便调整闪存阵列的不同劣化水平。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：DE60030765T2

公开(公告)日：2007-09-13

申请号：DE60030765

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU K ,  KHAN SAFI

IPC: G06F12/06 ,  G11C7/24 ,  G06F12/00 ,  G06F21/00 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：ES2269213T3

公开(公告)日：2007-04-01

申请号：ES00986483

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/00 ,  G06F12/06 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: Sistema de memoria flash (112) que comprende: unas celdas de memoria flash dispuestas como un conjunto de macros flash (130), y unos medios de lectura durante escritura (144, 146) para escribir en una de dichas macros flash, mientras se lee simultáneamente en otra de dichas macros flash; en el que el sistema está conectado a un microprocesador (102) y en el que dichos medios de lectura durante escritura (144, 146) incluyen: unos medios de escritura (146) para escribir las señales recibidas desde el microprocesador a una macro seleccionada de dichas macros flash (130); y caracterizado porque dichos medios de lectura durante escritura incluyen además unos medios de suspensión, sensibles a la recepción de un mandato de lectura del microprocesador dirigido a dicha macro seleccionada de dichas macros flash, para suspender la operación del microprocesador hasta que los medios de escritura (146) hayan finalizado su operación, y para ejecutar el mandato de lectura.

公开(公告)号：ES2776396T3

公开(公告)日：2020-07-30

申请号：ES15716287

申请日：2015-03-26

Applicant: QUALCOMM INC

Inventor： WYRWAS JOHN MICHAEL ,  KHAN SAFI ,  GOUSEV EVGENI PETROVICH ,  GRUHLKE RUSSELL WAYNE ,  ZHOU YING ,  WECKERLE FRANK FREDERICK

IPC: G06F21/32 ,  G06K9/00 ,  G06K9/20 ,  G06K9/22 ,  H04N5/232

Abstract: Un aparato que comprende: una pantalla electrónica (100), que tiene un cristal de protección con una superficie frontal (167) que incluye un área de visualización (101), y un área de lectura de huellas digitales (102, 702) dentro del área de visualización; y medios para detectar la luz dispersa recibida, siendo la luz dispersa recibida resultado de la interacción de la luz con un objeto (150) en al menos contacto óptico parcial con el área de lectura de huellas digitales (102) de la superficie frontal (167); en el que: al menos parte de la luz dispersa recibida sufre al menos dos reflejos internos, y el elemento fotosensible (133) está configurado para registrar, dentro de un campo de visión del elemento fotosensible (133), múltiples reflejos discretos de una imagen del objeto (150), y emitir, a un procesador (1004), datos de imagen de los múltiples reflejos discretos y el procesador (1004) está configurado para reconocer, a partir de los datos de imagen de los múltiples reflejos discretos, una huella digital de un usuario de la pantalla electrónica (100).

公开(公告)号：AU2271301A

公开(公告)日：2001-06-25

申请号：AU2271301

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：CA2393143A1

公开(公告)日：2001-06-21

申请号：CA2393143

申请日：2000-12-14

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  YU NICHOLAS K ,  KHAN SAFI ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26 ,  G11C16/32

Abstract: The flash and SRAM memory (112, 113) are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce over all power consumption of a mobile telephone employing the ASIC. The flash memory system (112) includes a flash memory array (130) configured to provide a set of individual flash macros and a flash memory controller (132) for accessing the flash macros. The flash memory controller includes a read while writing unit (144, 146) for writing to one of the flash macros while simultaneously reading from another of the flash macros. The flash memory controller also includes programmable wait state registers (138) and a password register (140) providing a separate password for different portions of the flash memory array. A memory swap unit (149) is provided for swapping high and low memory subsequent to completion of operations performed by the boot loader. Method and apparatus implementations are disclosed.

公开(公告)号：US6392925B2

公开(公告)日：2002-05-21

申请号：US81818601

申请日：2001-03-26

Applicant: QUALCOMM INC

Inventor： JHA SANJAY ,  SIMMONDS STEPHEN ,  ELHUSSEINI JALAL ,  YU NICHOLAS K ,  KHAN SAFI

IPC: G06F12/06 ,  G06F12/00 ,  G06F21/00 ,  G11C7/24 ,  G11C16/10 ,  G11C16/22 ,  G11C16/26 ,  G11C7/00

CPC classification number: G11C16/26 ,  G11C16/22 ,  G11C2216/22

Abstract: The flash and SRAM memory are embedded within an application specific integrated circuit (ASIC) to provide improved access times and also reduce overall power consumption of a mobile telephone employing the ASIC. The flash memory system includes a flash memory array configured to provide a set of individual flash macros and a flash memory controller for accessing the flash macros. The flash memory controller includes a read while writing unit for writing to one of the flash macros while simultaneously reading from another of the flash macros. By permitting read while writing, read operations need not be deferred until completion of pending write operations. The flash memory controller also includes programmable wait state registers. Each wait state register stores a programmable number of flash bus wait states associated with a portion of the flash memory. Thus, portions of flash memory subject to flash memory degradation may be programmed with a higher number of wait states than portions of memory that are not subject to degradation.

Abstract translation: 闪存和SRAM存储器嵌入到专用集成电路（ASIC）中，以提供改进的访问时间，并且还降低采用ASIC的移动电话的总体功耗。 闪存系统包括被配置为提供一组单独的闪存宏的闪存阵列和用于访问闪存宏的闪存控制器。 闪速存储器控制器包括一个写入单元，用于写入其中一个闪存宏，同时从另一个闪存宏读取。 通过在写入时允许读取，读取操作不需要延迟，直到完成等待写入操作。 闪存控制器还包括可编程等待状态寄存器。 每个等待状态寄存器存储与闪存的一部分相关联的可编程数量的闪存总线等待状态。 因此，存在闪速存储器劣化的闪存的部分可以被编程为具有比没有劣化的存储器部分更多的等待状态。

公开(公告)号：DE60142799D1

公开(公告)日：2010-09-23

申请号：DE60142799

申请日：2001-02-07

Applicant: QUALCOMM INC

Inventor： KHAN SAFI ,  YU NICHOLAS K ,  HASQUINE DAVID W ,  FUCHS ROBERT ,  STAFFORD DAVE ,  DHAWAN RAJAT

IPC: G06F1/32 ,  G06F1/08 ,  G06F1/10 ,  G06F9/30 ,  G06F9/38