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    AMPLIFIERS WITH IMPROVED ISOLATION
    1.
    发明申请
    AMPLIFIERS WITH IMPROVED ISOLATION 审中-公开
    具有改进隔离功能的放大器

    公开(公告)号：WO2014116687A2

    公开(公告)日：2014-07-31

    申请号：PCT/US2014/012524

    申请日：2014-01-22

    Applicant: QUALCOMM INCORPORATED

    Inventor： ABDELHALEM, Sherif ,  BIEDERMAN, III, William James

    IPC: H03F1/02 ,  H03F3/193

    CPC classification number: H03F1/0205 ,  H03F1/0261 ,  H03F1/0277 ,  H03F1/22 ,  H03F1/223 ,  H03F1/523 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/22 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/294 ,  H03F2200/426 ,  H03F2200/541 ,  H03F2203/21142 ,  H03F2203/7206

    Abstract: Amplifiers with improved isolation are disclosed. In an exemplary design, an apparatus (e.g., a wireless device, an integrated circuit, etc.) includes an amplifier having a gain transistor, first and second cascode transistors, and a shunt transistor. The gain transistor receives an input signal and provides an amplified signal. The first cascode transistor is coupled between the gain transistor and an intermediate node and receives the amplified signal. The second cascode transistor is coupled between the intermediate node and an output node and provides an output signal. The shunt transistor is coupled between the intermediate node and circuit ground. The first and second cascode transistors are enabled to provide the output signal. The shunt transistor is (i) disabled when the cascode transistors are enabled and (ii) enabled to short the intermediate node to circuit ground when the cascode transistors are disabled.

    Abstract translation: 公开了具有改进隔离的放大器。 在示例性设计中，装置（例如，无线装置，集成电路等）包括具有增益晶体管，第一和第二共源共栅晶体管以及分流晶体管的放大器。 增益晶体管接收输入信号并提供放大信号。 第一共源共栅晶体管耦合在增益晶体管和中间节点之间，并接收放大的信号。 第二共源共栅晶体管耦合在中间节点和输出节点之间并提供输出信号。 分流晶体管耦合在中间节点和电路接地之间。 第一和第二共源共栅晶体管能够提供输出信号。 分流晶体管是（i）当共源共栅晶体管使能时被禁止，（ii）当共源共栅晶体管被禁用时，能够将中间节点短路到电路接地。

    AMPLIFIERS WITH INDUCTIVE DEGENERATION AND CONFIGURABLE GAIN AND INPUT MATCHING
    2.
    发明公开
    AMPLIFIERS WITH INDUCTIVE DEGENERATION AND CONFIGURABLE GAIN AND INPUT MATCHING 有权
    VERSTÄRKERMIT INDUKTIVER DEGENERATION，KONFIGURIERBARERVERSTÄRKUNGUND EANGANGSANPASSUNG

    公开(公告)号：EP2974003A1

    公开(公告)日：2016-01-20

    申请号：EP14712142.0

    申请日：2014-03-06

    Applicant: Qualcomm Incorporated

    Inventor： YOUSSEF, Ahmed A. ,  ABDELHALEM, Sherif ,  GHANY, Ehab A. Abdel ,  CHANG, Li-Chung

    IPC: H03F1/08 ,  H03F1/56 ,  H03F3/189 ,  H03F3/45

    CPC classification number: H03F1/223 ,  H03F1/08 ,  H03F1/56 ,  H03F3/189 ,  H03F3/45179 ,  H03F2200/492 ,  H03G1/0023

    Abstract: Amplifiers with inductive degeneration and configurable gain and input matching are disclosed. In an exemplary design, an apparatus includes a gain transistor, an inductor, and an input matching circuit for an amplifier. The gain transistor has a variable gain determined based on its bias current. The inductor is coupled between the gain transistor and circuit ground. The input matching circuit is selectively coupled to the gain transistor based on the variable gain of the gain transistor. For example, the input matching circuit may be coupled to the gain transistor in a low-gain mode and decoupled from the gain transistor in the high-gain mode. In an exemplary design, the input matching circuit includes a resistor, a capacitor, and a second transistor coupled in series. The resistor is used for input matching of the amplifier. The second transistor couples or decouples the resistor to or from the gain transistor.

    Abstract translation: 公开了具有感应退化和可配置增益和输入匹配的放大器。 在示例性设计中，装置包括用于放大器的增益晶体管，电感器和输入匹配电路。 增益晶体管具有基于其偏置电流确定的可变增益。 电感器耦合在增益晶体管和电路接地之间。 基于增益晶体管的可变增益，输入匹配电路选择性地耦合到增益晶体管。 例如，输入匹配电路可以以低增益模式耦合到增益晶体管，并在高增益模式中与增益晶体管分离耦合。 在示例性设计中，输入匹配电路包括串联耦合的电阻器，电容器和第二晶体管。 该电阻用于放大器的输入匹配。 第二个晶体管将电阻器耦合到或去耦合增益晶体管。

    AMPLIFIERS WITH INDUCTIVE DEGENERATION AND CONFIGURABLE GAIN AND INPUT MATCHING
    4.
    发明申请
    AMPLIFIERS WITH INDUCTIVE DEGENERATION AND CONFIGURABLE GAIN AND INPUT MATCHING 审中-公开
    具有电感衰减和可配置增益和输入匹配的放大器

    公开(公告)号：WO2014164170A1

    公开(公告)日：2014-10-09

    申请号：PCT/US2014/020994

    申请日：2014-03-06

    Applicant: QUALCOMM INCORPORATED

    Inventor： YOUSSEF, Ahmed A. ,  ABDELHALEM, Sherif ,  GHANY, Ehab A. Abdel ,  CHANG, Li-Chung

    IPC: H03F1/08 ,  H03F1/56 ,  H03F3/189 ,  H03F3/45

    CPC classification number: H03F1/223 ,  H03F1/08 ,  H03F1/56 ,  H03F3/189 ,  H03F3/45179 ,  H03F2200/492 ,  H03G1/0023

    Abstract: Amplifiers with inductive degeneration and configurable gain and input matching are disclosed. In an exemplary design, an apparatus includes a gain transistor, an inductor, and an input matching circuit for an amplifier. The gain transistor has a variable gain determined based on its bias current. The inductor is coupled between the gain transistor and circuit ground. The input matching circuit is selectively coupled to the gain transistor based on the variable gain of the gain transistor. For example, the input matching circuit may be coupled to the gain transistor in a low-gain mode and decoupled from the gain transistor in the high-gain mode. In an exemplary design, the input matching circuit includes a resistor, a capacitor, and a second transistor coupled in series. The resistor is used for input matching of the amplifier. The second transistor couples or decouples the resistor to or from the gain transistor.

    Abstract translation: 公开了具有感应退化和可配置增益和输入匹配的放大器。 在示例性设计中，装置包括用于放大器的增益晶体管，电感器和输入匹配电路。 增益晶体管具有基于其偏置电流确定的可变增益。 电感器耦合在增益晶体管和电路接地之间。 基于增益晶体管的可变增益，输入匹配电路选择性地耦合到增益晶体管。 例如，输入匹配电路可以以低增益模式耦合到增益晶体管，并在高增益模式中与增益晶体管去耦。 在示例性设计中，输入匹配电路包括串联耦合的电阻器，电容器和第二晶体管。 该电阻用于放大器的输入匹配。 第二个晶体管将电阻器耦合或去耦合增益晶体管。

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