公开(公告)号：WO2018128764A1

公开(公告)日：2018-07-12

申请号：PCT/US2017/066246

申请日：2017-12-14

Applicant: QUALCOMM INCORPORATED

Inventor： HANAFI, Bassel ,  ABDELHALEM, Sherif ,  LAKDAWALA, Hasnain

IPC: H03F3/193 ,  H03F3/26 ,  H03F1/22 ,  H03F1/56 ,  H03F3/21 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H03G3/30

CPC classification number: H03G1/0005 ,  H03F1/0205 ,  H03F1/223 ,  H03F1/56 ,  H03F3/19 ,  H03F3/193 ,  H03F3/21 ,  H03F3/211 ,  H03F3/245 ,  H03F3/265 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/213 ,  H03F2200/222 ,  H03F2200/231 ,  H03F2200/294 ,  H03F2200/42 ,  H03F2200/451 ,  H03F2200/546 ,  H03G1/0017 ,  H03G3/3052 ,  H03G2201/103 ,  H03G2201/106

Abstract: Certain aspects of the present disclosure generally relate to a multi-output amplifier (400) implemented using a capacitive attenuator (414). For example, the multi-output amplifier (400) generally includes a first capacitive attenuator (414) coupled to an input node of the multi-output amplifier (400). In certain aspects, the multi-output amplifier (400) also includes a first amplification stage (416) having an input coupled to a tap node of the first capacitive attenuator (414) and an output coupled to a first output node of the multi-output amplifier (400), and a second amplification stage (418) having an output coupled to a second output node of the multi-output amplifier (400). For certain aspects, the multi-output amplifier includes a second capacitive attenuator coupled to the input node of the multi-output amplifier, and the second amplification stage has an input coupled to a tap node of the second capacitive attenuator.

公开(公告)号：WO2016069172A1

公开(公告)日：2016-05-06

申请号：PCT/US2015/052904

申请日：2015-09-29

Applicant: QUALCOMM INCORPORATED

Inventor： CHOKSI, Ojas Mahendra ,  FAN, Bin ,  HANAFI, Bassel

IPC: H03F1/32 ,  H03F1/34 ,  H03F3/193 ,  H03F3/45 ,  H03F3/195

CPC classification number: H03F1/565 ,  H03F1/3211 ,  H03F1/347 ,  H03F3/193 ,  H03F3/195 ,  H03F3/45071 ,  H03F3/45188 ,  H03F3/45475 ,  H03F2200/294 ,  H03F2200/301 ,  H03F2200/451 ,  H03F2200/54 ,  H03F2203/21112 ,  H03F2203/45306 ,  H03F2203/45318 ,  H03F2203/45386 ,  H03F2203/45562 ,  H03F2203/45616 ,  H03F2203/45621 ,  H04B1/525

Abstract: An apparatus (400) includes: first and second transistors (410, 412), each of the first and second transistors (410, 412) includes a gate terminal, a source terminal, and a drain terminal; and a transformer (420) including a primary winding (422) and first and second secondary windings (424, 426), the primary winding (422) is coupled to a first input node configured to receive an input signal and a second input node configured to receive a potential, the first and second secondary windings (424, 426) are coupled to gate terminals of the first and second transistors (410, 412) and cross-coupled to source terminals of the first and second transistors (410, 412).

Abstract translation: 装置（400）包括：第一和第二晶体管（410,412），第一和第二晶体管（410,412）中的每一个包括栅极端子，源极端子和漏极端子; 以及包括初级绕组（422）和第一和第二次级绕组（424,426）的变压器（420），所述初级绕组（422）耦合到被配置为接收输入信号的第一输入节点和配置的第二输入节点 为了接收电位，第一和第二次级绕组（424,426）耦合到第一和第二晶体管（410,412）的栅极端子并交叉耦合到第一和第二晶体管（410,412）的源极端子， 。

公开(公告)号：WO2016076981A1

公开(公告)日：2016-05-19

申请号：PCT/US2015/054273

申请日：2015-10-06

Applicant: QUALCOMM INCORPORATED

Inventor： CHOKSI, Ojas Mahendra ,  FAN, Bin ,  HANAFI, Bassel ,  LAKDAWALA, Hasnain Mohammedi ,  AKULA, Prashanth ,  SABOURI, Faramarz

IPC: H04B1/16

CPC classification number: H04B1/16 ,  H04B1/1018 ,  H04B1/1027 ,  H04B1/1638 ,  H04B2001/0416

Abstract: An apparatus including: at least one differential amplifier configured to amplify a radio frequency signal; a mixer configured to mix the radio frequency signal from the at least one differential amplifier with a local oscillator signal; and a low-pass filter coupled to the mixer, the low-pass filter includes a capacitor and at least one variable resistor configured to tune the low-pass filter.

Abstract translation: 一种装置，包括：至少一个差分放大器，被配置为放大射频信号; 配置为将来自所述至少一个差分放大器的射频信号与本地振荡器信号混合的混频器; 以及耦合到混频器的低通滤波器，低通滤波器包括电容器和配置成调谐低通滤波器的至少一个可变电阻器。

公开(公告)号：EP4466787A1

公开(公告)日：2024-11-27

申请号：EP22854359.1

申请日：2022-12-20

Applicant: QUALCOMM INCORPORATED

Inventor： HUA, Xingyi ,  HANAFI, Bassel ,  TRIPURARI JAYARAMAN, Karthik ,  GATTA, Francesco

IPC: H03F1/22 ,  H03F1/26 ,  H03F1/56 ,  H03F3/19 ,  H03G1/00 ,  H03G3/30 ,  H03F3/72

公开(公告)号：EP3219018A1

公开(公告)日：2017-09-20

申请号：EP15787073.4

申请日：2015-10-06

Applicant: Qualcomm Incorporated

Inventor： CHOKSI, Ojas Mahendra ,  FAN, Bin ,  HANAFI, Bassel ,  LAKDAWALA, Hasnain Mohammedi ,  AKULA, Prashanth ,  SABOURI, Faramarz

IPC: H04B1/16

CPC classification number: H04B1/16 ,  H04B1/1018 ,  H04B1/1027 ,  H04B1/1638 ,  H04B2001/0416

Abstract: An apparatus including: at least one differential amplifier configured to amplify a radio frequency signal; a mixer configured to mix the radio frequency signal from the at least one differential amplifier with a local oscillator signal; and a low-pass filter coupled to the mixer, the low-pass filter includes a capacitor and at least one variable resistor configured to tune the low-pass filter.

Abstract translation: 一种设备，包括：至少一个差分放大器，被配置为放大射频信号; 混频器，被配置为将来自所述至少一个差分放大器的射频信号与本地振荡器信号混频; 以及耦合到所述混频器的低通滤波器，所述低通滤波器包括电容器和被配置为调谐所述低通滤波器的至少一个可变电阻器。

公开(公告)号：EP4533659A1

公开(公告)日：2025-04-09

申请号：EP23725541.9

申请日：2023-04-28

Applicant: QUALCOMM INCORPORATED

Inventor： KORD, Ahmed ,  GATTA, Francesco ,  UZUNKOL, Mehmet ,  HANAFI, Bassel

IPC: H03F1/56 ,  H03F1/42 ,  H03F1/22 ,  H03F1/52 ,  H03F3/195 ,  H03F3/21

公开(公告)号：EP3213410A1

公开(公告)日：2017-09-06

申请号：EP15778536.1

申请日：2015-09-29

Applicant: Qualcomm Incorporated

Inventor： CHOKSI, Ojas Mahendra ,  FAN, Bin ,  HANAFI, Bassel

IPC: H03F1/32 ,  H03F1/34 ,  H03F3/193 ,  H03F3/45 ,  H03F3/195

CPC classification number: H03F1/565 ,  H03F1/3211 ,  H03F1/347 ,  H03F3/193 ,  H03F3/195 ,  H03F3/45071 ,  H03F3/45188 ,  H03F3/45475 ,  H03F2200/294 ,  H03F2200/301 ,  H03F2200/451 ,  H03F2200/54 ,  H03F2203/21112 ,  H03F2203/45306 ,  H03F2203/45318 ,  H03F2203/45386 ,  H03F2203/45562 ,  H03F2203/45616 ,  H03F2203/45621 ,  H04B1/525

Abstract: An apparatus includes: first and second transistors, each of the first and second transistors includes a gate terminal, a source terminal, and a drain terminal; and a transformer including a primary winding and first and second secondary windings, the primary winding is coupled to a first input node configured to receive an input signal and a second input node configured to receive a potential, the first and second secondary windings are coupled to gate terminals of the first and second transistors and cross-coupled to source terminals of the first and second transistors.

Abstract translation: 一种装置包括：第一和第二晶体管，第一和第二晶体管中的每一个包括栅极端子，源极端子和漏极端子; 以及包括初级绕组以及第一和第二次级绕组的变压器，所述初级绕组耦合到被配置为接收输入信号的第一输入节点和被配置为接收电位的第二输入节点，所述第一和第二次级绕组耦合到 第一和第二晶体管的栅极端子并交叉耦合到第一和第二晶体管的源极端子。