公开(公告)号：EP1910216A1

公开(公告)日：2008-04-16

申请号：EP06787902.3

申请日：2006-07-19

Applicant: QUALCOMM Incorporated

Inventor： SASAGAWA, Teruo ,  CHUI, Clarence ,  KOTHARI, Manish ,  GANTI, Surya, Prakash ,  SAMPSELL, Jeffrey, B.

IPC: B81B3/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/0136 ,  G02B6/3584 ,  G02B26/001

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material that is selectively diffused with a dopant material or formed of a selectively oxidized metal sacrificial material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a diffused or oxidized sacrificial material.

公开(公告)号：WO2007120886A2

公开(公告)日：2007-10-25

申请号：PCT/US2007/009274

申请日：2007-04-12

Applicant: QUALCOMM INCORPORATED ,  SASAGAWA, Teruo ,  KOGUT, Lior

Inventor： SASAGAWA, Teruo ,  KOGUT, Lior

CPC classification number: B81B3/001 ,  B81B2201/047 ,  B81C2201/0115 ,  G02B26/001

Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator 80 that includes a transparent electrode 81 having a first surface 81a; and a movable reflective electrode 82 with a second surface 82a facing the first surface 81a. The movable reflective electrode 82 is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer 83 which has a porous surface 83a. The porous surface 83a, in the actuated position, decreases contact area between the electrodes 81 and 82, thus reducing stiction.

Abstract translation: 公开了一种利用多孔电极表面降低静摩擦力的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器80，其包括具有第一表面81a的透明电极81; 以及具有面向第一表面81a的第二表面82a的可移动反射电极82。 可移动反射电极82可在松弛和致动（折叠）位置之间移动。 在第一或第二表面上提供铝层。 然后将铝层阳极氧化以提供具有多孔表面83a的氧化铝层83。 处于致动位置的多孔表面83a减小了电极81和82之间的接触面积，从而减小了静电。

公开(公告)号：WO2007123871A1

公开(公告)日：2007-11-01

申请号：PCT/US2007/009267

申请日：2007-04-12

Applicant: QUALCOMM INCORPORATED ,  SASAGAWA, Teruo ,  KOGUT, Lior

Inventor： SASAGAWA, Teruo ,  KOGUT, Lior

IPC: G02B26/00

CPC classification number: G02B26/001 ,  B81B3/001

Abstract: A microelectromechanical device (MEMS) utilizing nanoparticles for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator (80) that includes a transparent electrode assembly (81) having a first surface (81a); and a movable reflective electrode assembly (82) with a second surface (82a) facing the first surface (81a). The movable reflective electrode assembly (82) is movable between a relaxed and actuated (collapsed) position. Particles are deposited over the transparent electrode assembly (81) or over a sacrificial layer separating the two electrode assemblies. The particles lead to dimples (83) in the reflective surface (82a) of the movable reflective electrode assembly (82). The particles can be removed with the sacrificial layer or remain in final devices.

Abstract translation: 公开了一种利用纳米颗粒降低静电的微机电装置（MEMS）。 在一个实施例中，微机电装置是干涉式调制器（80），其包括具有第一表面（81a）的透明电极组件（81）; 以及具有面向第一表面（81a）的第二表面（82a）的可移动反射电极组件（82）。 可移动反射电极组件（82）可在松弛和致动（折叠）位置之间移动。 颗粒沉积在透明电极组件（81）上方，或者沉积在分离两个电极组件的牺牲层上。 颗粒导致可动反射电极组件（82）的反射表面（82a）中的凹坑（83）。 颗粒可以用牺牲层去除或保留在最终的装置中。

公开(公告)号：WO2007123820A2

公开(公告)日：2007-11-01

申请号：PCT/US2007/008564

申请日：2007-04-05

Applicant: QUALCOMM INCORPORATED ,  SASAGAWA, Teruo ,  KOGUT, Lior ,  TUNG, Ming-Hau

Inventor： SASAGAWA, Teruo ,  KOGUT, Lior ,  TUNG, Ming-Hau

IPC: B81C1/00

CPC classification number: B81B3/0008 ,  G02B26/001

Abstract: Methods of making MEMS devices including interferometric modulators involve depositing various layers, including stationary layers, movable layers and sacrificial layers, on a substrate. A non-planar surface is formed on one or more layers by flowing an etchant through a permeable layer. In one embodiment the non-planar surface is formed on a sacrificial layer. A movable layer formed over the non-planar surface of the sacrificial layer results in a non-planar interface between the sacrificial and movable layers. Removal of the sacrificial layer results in a released MEMS device having reduced contact area between the movable and stationary layers when the MEMS device is actuated. The reduced contact area results in lower adhesion forces and reduced stiction during actuation of the MEMS device. These methods may be used to manufacture released and unreleased interferometric modulators.

Abstract translation: 制造包括干涉式调制器的MEMS器件的方法包括在衬底上沉积包括固定层，可移动层和牺牲层的各种层。 通过使蚀刻剂流过可渗透层而在一个或多个层上形成非平面表面。 在一个实施例中，非平面表面形成在牺牲层上。 形成在牺牲层的非平面表面上的可移动层导致牺牲层和可移动层之间的非平面界面。 牺牲层的去除导致释放的MEMS器件在MEMS器件致动时具有减小可移动层和固定层之间的接触面积。 减小的接触面积导致MEMS器件的致动期间较低的粘附力和降低的静摩擦力。 这些方法可用于制造释放和未释放的干涉式调制器。

公开(公告)号：WO2007084317A2

公开(公告)日：2007-07-26

申请号：PCT/US2007/000698

申请日：2007-01-11

Applicant: QUALCOMM INCORPORATED ,  CHUNG, Wonsuk ,  ZEE, Steve ,  SASAGAWA, Teruo

Inventor： CHUNG, Wonsuk ,  ZEE, Steve ,  SASAGAWA, Teruo

IPC: B81C1/00

CPC classification number: B81C1/00801 ,  B81B2201/047 ,  B81C2201/014 ,  G02B26/001 ,  Y10T428/31678

Abstract: The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer 104b between a sacrificial layer and an electrode 14a, 14b, 14c. The etch stop 104b may reduce undesirable over-etching of the sacrificial layer and the electrode 14a, 14b, 14c. The etch stop layer 104b may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer 104b may include silicon-rich silicon nitride.

Abstract translation: 通过在牺牲层和电极14a，14b，14c之间采用蚀刻停止层104b来改善诸如干涉式调制器之类的MEMS器件的制造。 蚀刻停止件104b可以减少牺牲层和电极14a，14b，14c的不希望的过蚀刻。 蚀刻停止层104b也可以用作阻挡层，缓冲层和/或模板层。 蚀刻停止层104b可以包括富硅的氮化硅。

公开(公告)号：WO2007078495A2

公开(公告)日：2007-07-12

申请号：PCT/US2006/045925

申请日：2006-11-30

Applicant: QUALCOMM INCORPORATED ,  WANG, Chun-Ming ,  LAN, Jeffrey ,  SASAGAWA, Teruo

Inventor： WANG, Chun-Ming ,  LAN, Jeffrey ,  SASAGAWA, Teruo

IPC: B81B3/00 ,  G02B26/08 ,  G02B26/00

CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。