Abstract:
The present invention relates to the production of highly efficient films for field-effect electron emitters, wherein said films may be used in the production of flat displays in electronic microscopes, in microwave electronics, in light sources, etc. This invention more precisely relates to a cold cathode that comprises a substrate having a carbon film applied thereto. The carbon film has an irregular structure consisting of carbon micro-ridges and/or micro-threads which are perpendicular to the surface of the substrate, have a size ranging typically from 0.01 to 1 micron and a distribution density of between 0.1 and 10 mu m . This invention also relates to method for producing a cold electrode, wherein said method comprises generating a DC current discharge with a current density of between 0.15 and 0.5 A/cm in a mixture comprising hydrogen and a carbon-containing additive, and further depositing the carbon phase on the substrate located at the anode. The deposition process is carried out in a mixture containing hydrogen and vapours of ethylic alcohol or methane, under an overall pressure of between 50 and 300 Torrs and at a substrate temperature of between 600 and 900 DEG C. The concentration of ethylic alcohol vapours ranges from 5 to 10 % while that of methane vapours ranges from 15 to 30 %. A method for producing a cold cathode comprises generating a microwave discharge at an absorbed power of between 100 and 1000 W. This discharge is generated in a mixture containing gaseous carbon oxide as well as methane in a 0.8-1.2 concentration and under a pressure of between 10 and 200 Torrs, and the carbon phase is further deposited on the substrate at a temperature on the substrate surface that ranges from 500 to 700 DEG C.
Abstract:
This invention pertains to a method for forming diamond films by the gas phase synthesis. The invention pertains to a manufacturing of highly effective films to be used for field electron emitters. The goal of the invention is to manufacture diamond films with highly effective electron emission properties. Diamond films are formed on the substrate in the gas mixture of hydrogen and carbon containing gas with last one concentration 2-10% mixture through protective grid screen is being placed between the substrate and the metal filament under the preliminary heating of the filament up to 1800-2800 C, of the substrate 650 - 900 C in the hydrogen flow, after growing a diamond film up to selected thickness the surplus of graphite phase is removed. The methane could be used as the carbon containing gas with the concentration 2-8% at the gas flow. For the case of the silicon substrate the reactor is first filled with the hydrogen flow to remove a natural silicon oxide within the temperature ranges of the metal filament and the substrate necessary for film deposition, a silicon carbide layer on the substrate is formed by introducing a methane with the concentration 5-20% into the gas flow during 4-20 minutes, after diamond film deposition under the methane in the gas flow 2-8% the surplus of graphite phase is removed during 3-10 in the hydrogen flow.
Abstract:
The present invention relates to a high-luminosity light source which comprises a body with a transparent screen having an electro-conductive layer applied thereon for supporting a luminophore. A planar cathode is mounted within the body, while a grid-type anode is placed between the screen and the cathode at a predetermined distance from the latter. The body is filled with a working gas consisting of an inert gas or a mixture of inert gases, while the anode and the cathode may be made of spray-resistant materials. The cathode may be made in the shape of a grid, while an additional screen having an electro-conductive layer applied thereon for supporting a luminophore is placed on the side of said cathode. A highly efficient photoluminophore may be used as the luminophore, while the working-gas pressure and the excitation parameters are optimally selected for excitation of the ultraviolet radiation of the working gas. Unlike light sources used in prior art, the luminophore is excited by electrons originating from a secondary emission, thus producing strong currents of electron beams and a high luminosity. This construction may also be used to provide sources with a large surface area. The light source of the present invention is an efficient one with a high intensity.
Abstract:
The inventive method relates to microelectronic and consists in the application of an emission layer to elements of an addressable field-emission electrode with the aid of a gas-phase synthesis method in a hydrogen flow accompanied by a supply of a carbonaceous gas. A dielectric backing is made of a high-temperature resistant material and discrete elements of the addressable field-emission electrode are made of a high-temperature resistant metal. the growth rate of the emission layer on the dielectric backing is smaller than the growth rate of the emission layer on the metallic discrete elements as a result of a selected process of depositing the carbonaceous emission layer, namely the backing temperature, the temperature of the reactor threads, the pumping speed of a gas mixture through the reactor, a selected distance between the reactor threads and the backing and a settling time. The cathode metallic discrete elements can be made of two metallic layers. The upper metallic layer is removed before the formation of required configurations from the remaining layer. The layer materials are selected in such a way that the emission characteristics thereof can ensure a required current from the upper metallic layer. For producing a display structure, a control grid is obtained from the metal layer having an emission threshold higher than a field density at which the cathode emits the required current. The inventive method enables to avoid operations of removing the emission layer making it possible to produce flat displays having high characteristics in addition to high performance and low cost.
Abstract:
The present invention may be used in the production of highly efficient films for electron field emitters. The cold-emission cathode of the present invention comprises a substrate having a carbon film with an irregular structure applied thereon. This structure comprises carbon micro- and nano-ridges and/or micro- and nano-threads which are perpendicular to the surface of the substrate, which have a characteristic scale of between 0.01 and 1 micron as well as a distribution density of between 0.1 and 100 mu m, and which are coated with a diamond nano-film whose thickness represents a fraction of a micron. The method for producing the cathode involves sequentially depositing two carbon films. A carbon film with nano-barbs is first deposited on a substrate arranged on an anode by igniting a direct-current discharge at a density of between 0.15 and 0.5 A. This deposition is carried out in a mixture containing hydrogen and a carbon-containing additive, under a global pressure of between 50 and 300 torrs, using vapours of ethylic alcohol at a 5 to 15 % concentration or vapours of methane at a 6 to 30 % concentration, and at a temperature on the substrate of between 600 and 1100 DEG C. A diamond nano-film is then deposited on the graphite film thus grown.
Abstract:
The present invention may be used in the field of microelectronics, in medicine as well as in the production of lighting appliances. The method and the device of the present invention are used for increasing the brightness of optical radiation sources powered by low-voltage power supplies. The optical radiation is generated by emitting electrons and by exciting the radiation. The electrons are generated by emitting the same from the surface of a cathode, while the excitation of the radiation involves accelerating the electrons in the gaseous interval up to an energy exceeding the excitation energy of the radiating levels of the gas. To this end, a voltage is applied between the cathode and the anode, wherein said voltage does not exceed the ignition voltage of a self-maintained discharge. The device of the present invention comprises a chamber as well as electrodes having surfaces which are transparent to the radiation. The gas pressure inside the chamber is determined from balance conditions between the energetic length of an electron trip and the distance between said electrodes.
Abstract:
The present invention may be used in the field of microelectronics, in medicine as well as in the production of lighting appliances. The method and the device of the present invention are used for increasing the brightness of optical radiation sources powered by low-voltage power supplies. The optical radiation is generated by emitting electrons and by exciting the radiation. The electrons are generated by emitting the same from the surface of a cathode, while the excitation of the radiation involves accelerating the electrons in the gaseous interval up to an energy exceeding the excitation energy of the radiating levels of the gas. To this end, a voltage is applied between the cathode and the anode, wherein said voltage does not exceed the ignition voltage of a self-maintained discharge. The device of the present invention comprises a chamber as well as electrodes having surfaces which are transparent to the radiation. The gas pressure inside the chamber is determined from balance conditions between the energetic length of an electron trip and the distance between said electrodes.