公开(公告)号：US3382454A

公开(公告)日：1968-05-07

申请号：US32296563

申请日：1963-11-12

Applicant: RAYTHEON CO

Inventor： GLEN WADE ,  STEELE SAMUEL R ,  FEIST WOLFGANG M

IPC: H01S5/028 ,  H01S5/30 ,  H01S5/32

CPC classification number: H01S5/30 ,  H01S5/028 ,  H01S5/32

公开(公告)号：CA1066429A

公开(公告)日：1979-11-13

申请号：CA256973

申请日：1976-07-14

Applicant: RAYTHEON CO

Inventor： BIERIG ROBERT W ,  STEELE SAMUEL R

IPC: H01L29/36 ,  H01L29/864 ,  H01L29/868 ,  H01L29/90 ,  H01L21/24

Abstract: NEGATIVE RESISTANCE DIODE AND PROCESS FOR MAKING SAME A modified Read-type diode having an extremely thin doping spike and with the electric field in the drift region terminated before the buffer zone. The buffer zone and a drift region are first grown upon a doped semiconductor substrate using epitaxial vapor deposition growth techniques employing a furnace tube within a multiple temperature zone reaction furnace. The doping spike is produced by injecting under pressure a fixed predetermined volume of dopant into the furnace tube. An avalanche region is grown over the doping spike and a Schottky barrier contact or semiconducting material of the opposite conductivity type grown over the avalanche region. Avalanche regions having a length less than 15% of the total active length of the device and doping spikes having a width of 500.ANG. or less are disclosed in a high-efficiency device.

公开(公告)号：US3330991A

公开(公告)日：1967-07-11

申请号：US29455463

申请日：1963-07-12

Applicant: RAYTHEON CO

Inventor： LAVINE JEROME M ,  FEIST WOLFGANG M ,  STEELE SAMUEL R

IPC: H01J1/308 ,  H01L33/00

CPC classification number: H01J1/308 ,  H01L33/00

公开(公告)号：CA765129A

公开(公告)日：1967-08-08

申请号：CA765129D

Applicant: RAYTHEON CO

Inventor： WADE GLEN ,  FEIST WOLFGANG M ,  STEELE SAMUEL R