公开(公告)号：US3275869A

公开(公告)日：1966-09-27

申请号：US29455563

申请日：1963-07-12

Applicant: RAYTHEON CO

Inventor： FEIST WOLFGANG M

IPC: H01J1/34 ,  H01J23/04

CPC classification number: H01J1/34 ,  H01J23/04 ,  H01J2201/3423 ,  H01J2201/3426

公开(公告)号：US3382454A

公开(公告)日：1968-05-07

申请号：US32296563

申请日：1963-11-12

Applicant: RAYTHEON CO

Inventor： GLEN WADE ,  STEELE SAMUEL R ,  FEIST WOLFGANG M

IPC: H01S5/028 ,  H01S5/30 ,  H01S5/32

CPC classification number: H01S5/30 ,  H01S5/028 ,  H01S5/32

公开(公告)号：US3330991A

公开(公告)日：1967-07-11

申请号：US29455463

申请日：1963-07-12

Applicant: RAYTHEON CO

Inventor： LAVINE JEROME M ,  FEIST WOLFGANG M ,  STEELE SAMUEL R

IPC: H01J1/308 ,  H01L33/00

CPC classification number: H01J1/308 ,  H01L33/00

公开(公告)号：CA1138571A

公开(公告)日：1982-12-28

申请号：CA339782

申请日：1979-11-14

Applicant: RAYTHEON CO

Inventor： FEIST WOLFGANG M

IPC: H01L21/033 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L21/302

Abstract: A semiconductor structure wherein a masking layer is formed to coves a portion of a surface of a semiconductor. A first doped region is formed in a portion of the semiconductor exposed by the masking layer. A chemical etchant is brought into contact with the masking layer, reducing the area of the making layer covering the semiconductor exposing a second different portion of the semiconductor contiguous to the first exposed portion of the semiconductor. Particles capable of establishing a doped region in the semiconductor layer are introduced into the second, different exposed portion of the semiconductor to form a second doped region in the semiconductor contiguous to the first doped region, such chemically etched masking layer inhibiting such particles from becoming introduced into the portion of the semiconductor disposed beneath the chemically etched masking layer. With such methods a self-aligned gate region may be formed in a field effect device having small channel lengths.

公开(公告)号：CA960282A

公开(公告)日：1974-12-31

申请号：CA123673

申请日：1971-09-24

Applicant: RAYTHEON CO

Inventor： PICKER AMOS ,  FEIST WOLFGANG M

IPC: G09G1/18 ,  G09G1/22 ,  H01J29/39 ,  H01J31/58

公开(公告)号：US3878063A

公开(公告)日：1975-04-15

申请号：US42774273

申请日：1973-12-26

Applicant: RAYTHEON CO

Inventor： FEIST WOLFGANG M

IPC: H01J9/20 ,  H01J29/39 ,  H01J31/60 ,  C23B5/48

CPC classification number: H01J9/20 ,  H01J29/39 ,  H01J31/60

Abstract: A membrane type dielectric storage target formed from a thin refractory dielectric film is stretched to form at least a onesided surface, a first surface portion contacting a conductive wire mesh, a second surface portion having areas coated with conductive material imaging the mesh of the first surface portion. The method contemplates forming the conductive image on the second surface portion by photo-resist, decoration, and breakdown techniques.

Abstract translation: 由薄耐火介电膜形成的膜型电介质存储靶被拉伸以形成至少单面表面，与导电丝网接触的第一表面部分，具有涂覆有导电材料的区域的第二表面部分， 第一表面部分。 该方法考虑通过光刻胶，装饰和击穿技术在第二表面部分上形成导电图像。

公开(公告)号：US3535598A

公开(公告)日：1970-10-20

申请号：US3535598D

申请日：1969-05-23

Applicant: RAYTHEON CO

Inventor： FEIST WOLFGANG M

IPC: H01J1/312 ,  H01L3/10

CPC classification number: B82Y10/00 ,  H01J1/312

公开(公告)号：GB2115609B

公开(公告)日：1986-04-30

申请号：GB8304462

申请日：1983-02-17

Applicant: RAYTHEON CO

Inventor： FEIST WOLFGANG M

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/308 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/302

公开(公告)号：DE3306702A1

公开(公告)日：1983-09-01

申请号：DE3306702

申请日：1983-02-25

Applicant: RAYTHEON CO

Inventor： FEIST WOLFGANG M

IPC: H01L29/73 ,  H01L21/265 ,  H01L21/308 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/32

公开(公告)号：CA765129A

公开(公告)日：1967-08-08

申请号：CA765129D

Applicant: RAYTHEON CO

Inventor： WADE GLEN ,  FEIST WOLFGANG M ,  STEELE SAMUEL R