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    METHOD OF FORMING DEPOSITED PATTERNS ON A SURFACE
    2.
    发明申请
    METHOD OF FORMING DEPOSITED PATTERNS ON A SURFACE 审中-公开
    在表面形成沉积图案的方法

    公开(公告)号：WO2015088771A1

    公开(公告)日：2015-06-18

    申请号：PCT/US2014/067285

    申请日：2014-11-25

    Applicant: RAYTHEON COMPANY

    Inventor： GOOCH, Roland ,  KOCIAN, Thomas, Allan ,  DIEP, Buu ,  KENNEDY, Adam, M. ,  BLACK, Stephen, H.

    IPC: B81C1/00

    CPC classification number: H01L31/18 ,  B81C1/00373 ,  B81C2201/0188 ,  H01L31/02327

    Abstract: A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities (11) includes: providing a structure (16) having a release agent (18) thereon; contacting a top surface (17) of the wafer (10) with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure (24); the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material (27) to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.

    Abstract translation: 在具有多个空腔（11）的基板的表面的选定部分上形成材料涂层的方法包括：提供在其上具有脱模剂（18）的结构（16）; 使所述晶片（10）的顶表面（17）与所述脱模剂接触以将所述脱模剂的部分转移到所述晶片的顶表面，同时所述空腔的底部保持与所述脱模剂间隔开以产生中间结构（24 ）; 所述脱模剂设置在所述晶片的顶表面上，并且所述空腔的底部部分脱离所述脱模剂; 将所述中间结构暴露于所述材料（27）以将所述材料涂覆在所述空腔的所述脱模剂和所述底部两者上; 并且与涂料一起选择性地除去脱模剂，同时将涂料留在空腔的底部。

    GETTER STRUCTURE FOR WAFER LEVEL VACUUM PACKAGED DEVICE
    3.
    发明申请
    GETTER STRUCTURE FOR WAFER LEVEL VACUUM PACKAGED DEVICE 审中-公开
    水平真空包装设备的结构

    公开(公告)号：WO2014099123A1

    公开(公告)日：2014-06-26

    申请号：PCT/US2013/065883

    申请日：2013-10-21

    Applicant: RAYTHEON COMPANY

    Inventor： GOOCH, Roland ,  KENNEDY, Adam, M. ,  BLACK, Stephen, H. ,  KOCIAN, Thomas, Allan ,  DIEP, Buu

    IPC: G01J5/02 ,  G01J5/04 ,  H01L23/26 ,  G01J5/08 ,  B81B7/00

    CPC classification number: H01L31/0203 ,  B81B7/0038 ,  G01J5/0285 ,  G01J5/045 ,  G01J5/0875 ,  H01L23/26 ,  H01L27/14618 ,  H01L27/14649 ,  H01L2924/0002 ,  Y10T29/4998 ,  Y10T428/24521 ,  H01L2924/00

    Abstract: A wafer level vacuum packaged (WLVP) device having a first substrate having an array of detectors and a second substrate bonded to the first substrate having a plurality of protrusions and a plurality of getter material members projecting outwardly from a sidewall of the protrusions members are disposed at oblique angles to the sidewalls and have ends extending into gaps between the protrusions. The device is formed by: forming protrusions into a surface of a substrate; and depositing getter material by physical vapor deposition from an evaporating source of the getter material at an oblique angle to the sidewalls, atoms of the getter material initially forming nucleation sites on the sidewalls with subsequent atoms attaching to the nucleation sites and shadowing area surrounding each nucleation site, the getter material thereby growing into structures towards the evaporating source.

    Abstract translation: 晶片级真空封装（WLVP）器件具有具有检测器阵列的第一衬底和与第一衬底接合的第二衬底，其具有多个突起和从突出构件的侧壁向外突出的多个吸气材料构件 与侧壁成倾斜的角度并且具有延伸到突起之间的间隙的端部。 该装置通过以下方式形成：将突起形成在基板的表面中; 并且通过物理气相沉积从吸气材料的蒸发源以与侧壁倾斜的角度沉积吸气剂材料，吸气材料的原子最初在侧壁上形成成核位点，随后的原子附着于成核位置和围绕每个成核的阴影区域 吸气剂材料因此生长成朝向蒸发源的结构。

    FABRICATION OF WINDOW CAVITY CAP STRUCTURES IN WAFER LEVEL PACKAGING
    6.
    发明申请
    FABRICATION OF WINDOW CAVITY CAP STRUCTURES IN WAFER LEVEL PACKAGING 审中-公开
    窗口包装中窗口孔结构的制作

    公开(公告)号：WO2014004162A1

    公开(公告)日：2014-01-03

    申请号：PCT/US2013/046283

    申请日：2013-06-18

    Applicant: RAYTHEON COMPANY

    Inventor： DIEP, Buu ,  BLACK, Stephen H.

    IPC: H01L21/56

    CPC classification number: G01J5/0235 ,  G01J5/024 ,  G01J5/045 ,  G01J5/20 ,  G01J2005/202 ,  H01L31/0203 ,  H01L31/09 ,  H01L2924/0002 ,  H01L2924/0001

    Abstract: A method of forming a window cap wafer (WCW) structure for semiconductor devices includes machining a plurality of cavities into a front side of a first substrate; bonding the first substrate to a second substrate, at the front side of the first substrate; removing a back side of the first substrate so as to expose the plurality of cavities, thereby defining the WCW structure comprising the second substrate and a plurality of vertical supports comprised of material of the first substrate.

    Abstract translation: 一种形成半导体器件的盖帽晶片（WCW）结构的方法包括将多个空腔加工成第一基板的正面; 在第一基板的前侧将第一基板接合到第二基板; 去除第一基板的背面以露出多个空腔，从而限定包括第二基板的WCW结构和由第一基板的材料构成的多个垂直支撑件。

    FABRICATION OF WINDOW CAVITY CAP STRUCTURES IN WAFER LEVEL PACKAGING
    9.
    发明公开
    FABRICATION OF WINDOW CAVITY CAP STRUCTURES IN WAFER LEVEL PACKAGING 审中-公开
    晶圆级封装窗口腔盖结构的制作

    公开(公告)号：EP2865002A1

    公开(公告)日：2015-04-29

    申请号：EP13809283.8

    申请日：2013-06-18

    Applicant: Raytheon Company

    Inventor： DIEP, Buu ,  BLACK, Stephen H.

    IPC: H01L21/56

    CPC classification number: G01J5/0235 ,  G01J5/024 ,  G01J5/045 ,  G01J5/20 ,  G01J2005/202 ,  H01L31/0203 ,  H01L31/09 ,  H01L2924/0002 ,  H01L2924/0001

    Abstract: A method of forming a window cap wafer (WCW) structure for semiconductor devices includes machining a plurality of cavities into a front side of a first substrate; bonding the first substrate to a second substrate, at the front side of the first substrate; removing a back side of the first substrate so as to expose the plurality of cavities, thereby defining the WCW structure comprising the second substrate and a plurality of vertical supports comprised of material of the first substrate.

    Abstract translation: 一种形成用于半导体器件的窗口帽晶片（WCW）结构的方法包括：将多个空腔加工到第一衬底的正面; 在第一基板的正面将第一基板粘合到第二基板; 去除所述第一基板的背面以露出所述多个空腔，由此限定包括所述第二基板和由所述第一基板的材料构成的多个垂直支撑件的WCW结构。

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