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    METHODS AND SYSTEMS FOR MEASURING PERIODIC STRUCTURES USING MULTI-ANGLE X-RAY REFLECTANCE SCATTEROMETRY (XRS)
    1.
    发明申请
    METHODS AND SYSTEMS FOR MEASURING PERIODIC STRUCTURES USING MULTI-ANGLE X-RAY REFLECTANCE SCATTEROMETRY (XRS) 审中-公开
    使用多角度X射线反射散射测量（XRS）测量周期结构的方法和系统

    公开(公告)号：WO2015112444A1

    公开(公告)日：2015-07-30

    申请号：PCT/US2015/011753

    申请日：2015-01-16

    Applicant: REVERA, INCORPORATED

    Inventor： POIS, Heath A. ,  REED, David A. ,  SCHUELER, Bruno W. ,  SMEDT, Rodney ,  FANTON, Jeffrey T.

    IPC: G01B15/00 ,  G01N23/223 ,  H01L21/66

    CPC classification number: G01N23/201 ,  G01N2223/054 ,  H01L22/12

    Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

    Abstract translation: 公开了使用多角度X射线反射散射法（XRS）测量周期性结构的方法和系统。 例如，通过X射线反射散射测定样品的方法包括将入射的X射线束照射在具有周期性结构的样品上以产生散射的X射线束，入射的X射线束同时提供多个 入射角和多个方位角。 该方法还涉及收集散射的X射线束的至少一部分。

    SYSTEMS AND APPROACHES FOR SEMICONDUCTOR METROLOGY AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY
    2.
    发明申请
    SYSTEMS AND APPROACHES FOR SEMICONDUCTOR METROLOGY AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY 审中-公开
    使用二次离子质谱法的半导体计量学和表面分析的系统和方法

    公开(公告)号：WO2016130690A1

    公开(公告)日：2016-08-18

    申请号：PCT/US2016/017370

    申请日：2016-02-10

    Applicant: REVERA, INCORPORATED

    Inventor： REED, David A. ,  SCHUELER, Bruno W. ,  NEWCOME, Bruce H. ,  SMEDT, Rodney ,  BEVIS, Chris

    IPC: H01J49/26 ,  H01J49/10 ,  H01L21/66

    CPC classification number: H01J49/142 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26 ,  H01L22/12

    Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

    Abstract translation: 公开了使用二次离子质谱（SIMS）的半导体测量和表面分析的系统和方法。 在一个实例中，二次离子质谱（SIMS）系统包括样品台。 一次离子束被引导到样品台。 提取透镜指向样品台。 提取透镜被配置为为从样品台上的样品发射的二次离子提供低提取场。 磁扇区光谱仪沿着SIMS系统的光路耦合到提取透镜。 磁扇区光谱仪包括耦合到磁扇区分析仪（MSA）的静电分析仪（ESA）。

    METHODS AND SYSTEMS FOR FABRICATING PLATELETS OF A MONOCHROMATOR FOR X-RAY PHOTOELECTRON SPECTROSCOPY
    4.
    发明申请
    METHODS AND SYSTEMS FOR FABRICATING PLATELETS OF A MONOCHROMATOR FOR X-RAY PHOTOELECTRON SPECTROSCOPY 审中-公开
    用于制备X射线光电子能谱分光光度计板的方法和系统

    公开(公告)号：WO2015026824A1

    公开(公告)日：2015-02-26

    申请号：PCT/US2014/051688

    申请日：2014-08-19

    Applicant: REVERA INCORPORATED

    Inventor： FANTON, Jeffrey T. ,  SMEDT, Rodney ,  SCHUELER, Bruno W. ,  REED, David A.

    IPC: G01N23/22 ,  G01N23/227 ,  H01J49/48 ,  H01J37/256

    CPC classification number: G01N23/20 ,  B23Q17/20 ,  G01N23/2273 ,  G21K1/06 ,  G21K2201/064 ,  H01J37/256 ,  Y10T29/49764 ,  Y10T29/49769 ,  Y10T29/49771 ,  Y10T29/53022

    Abstract: Methods and systems for fabricating platelets of a monochromator for X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a method of fabricating a platelet of a monochromator for X-ray photoelectron spectroscopy involves placing a crystal on a stage of an X-ray measuring apparatus, the crystal having a top surface. The method also involves measuring, by X-ray reflection, an orientation of a crystal plane of the crystal, the crystal plane beneath the top surface of the crystal and having a primary axis. The method also involves measuring a surface angle of the top surface of the crystal by measuring a light beam reflected from the top surface of the crystal.

    Abstract translation: 公开了用于制造用于X射线光电子能谱（XPS）的单色仪的血小板的方法和系统。 例如，制造用于X射线光电子能谱的单色仪的血小板的方法包括将晶体放置在X射线测量装置的台上，该晶体具有顶面。 该方法还包括通过X射线反射测量晶体的晶面的取向，晶体的顶表面下方的晶面并具有主轴。 该方法还包括通过测量从晶体顶表面反射的光束来测量晶体顶表面的表面角度。

    SYSTEM AND METHOD FOR CHARACTERIZING A FILM BY X-RAY PHOTOELECTRON AND LOW-ENERGY X-RAY FLUORESCENCE SPECTROSCOPY
    5.
    发明申请
    SYSTEM AND METHOD FOR CHARACTERIZING A FILM BY X-RAY PHOTOELECTRON AND LOW-ENERGY X-RAY FLUORESCENCE SPECTROSCOPY 审中-公开
    用X射线光电子和低能量X射线荧光光谱表征薄膜的系统和方法

    公开(公告)号：WO2013048913A1

    公开(公告)日：2013-04-04

    申请号：PCT/US2012/056752

    申请日：2012-09-21

    Applicant: REVERA INCORPORATED ,  SCHUELER, Bruno W. ,  REED, David A. ,  FANTON, Jeffrey Thomas ,  SMEDT, Rodney

    Inventor： SCHUELER, Bruno W. ,  REED, David A. ,  FANTON, Jeffrey Thomas ,  SMEDT, Rodney

    IPC: G01N23/223 ,  G01N23/225

    CPC classification number: G21K1/06 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/61 ,  G21K2201/062 ,  G21K2201/064

    Abstract: Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.

    Abstract translation: 公开了通过X射线光电子能谱（XPS）表征膜的系统和方法。 例如，用于表征胶片的系统可以包括用于产生具有低于硅的k边缘的能量的X射线束的X射线源。 可以包括样品保持器以将样品定位在X射线束的通路中。 可以包括第一检测器以收集通过用X射线束轰击样品而产生的XPS信号。 可以包括第二检测器，用于收集通过用X射线束轰击样品而产生的X射线荧光（XRF）信号。 在分析现场的X射线通量探测器附近和分析现场可以提供监测/估计分析现场的主要X射线通量。 XRF和XPS信号都可以归一化为（估计的）初级X射线通量，以实现膜厚度或剂量测量，而不需要使用信号强度比。

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