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    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    1.
    发明申请
    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR 审中-公开

    公开(公告)号：WO2008036701A3

    公开(公告)日：2008-03-27

    申请号：PCT/US2007/078831

    申请日：2007-09-19

    Applicant: ROSEMOUNT AEROSPACE INC. ,  GUO, Shuwen ,  ERIKSEN, Odd Harald, Steen ,  POTASEK, David, P. ,  CHILDRESS, Kimiko J.

    Inventor： GUO, Shuwen ,  ERIKSEN, Odd Harald, Steen ,  POTASEK, David, P. ,  CHILDRESS, Kimiko J.

    IPC: G01L9/00

    Abstract: A harsh environment transducer including: - a substrate (14) having a first surface and a second surface, the latter being exposed to the environment - a device layer sensor means (12) on the substrate (14) for measuring a parameter associated with the environment, including a single crystal semiconductor material having a thickness of less than about 0.5 microns - an output (50) contact on the substrate (14) and in electrical communication with the sensor means (12) - a package having an internal space communicating with the environment and receiving the substrate (14) such that its first surface is substantially isolated from the environment and its second surface is substantially exposed to the environment - a connecting component (22) coupled to the package - a wire (24) electrically connecting the connecting component (22) and the output contact (50) such that an output of the sensor means can be communicated. The external surface of the wire (24) and at least one of the output contact (50) and the connecting component (22) is substantially platinum.

    TRANSDUCER FOR USE IN HARSH ENVIRONMENTS
    2.
    发明申请
    TRANSDUCER FOR USE IN HARSH ENVIRONMENTS 审中-公开

    公开(公告)号：WO2008036705A3

    公开(公告)日：2008-03-27

    申请号：PCT/US2007/078837

    申请日：2007-09-19

    Applicant: ROSEMOUNT AEROSPACE INC. ,  ERIKSEN, Odd Harald, Steen ,  CHILDRESS, Kimiko, J. ,  GUO, Shuwen

    Inventor： ERIKSEN, Odd Harald, Steen ,  CHILDRESS, Kimiko, J. ,  GUO, Shuwen

    IPC: G01L9/00

    Abstract: A pressure sensor (10) for use in a harsh environment including a substrate (14) and a sensor die (12) directly coupled to the substrate (14) by a bond frame (70) positioned between the substrate (14) and the sensor die (12). The sensor die (12) includes a generally flexible diaphragm (16) configured to flex when exposed to a sufficient differential pressure thereacross. The sensor (10) further includes a piezoelectric or piezoresistive sensing element (46) at least partially located on the diaphragm (16) such that the sensing element (46) provides an electrical signal upon flexure of the diaphragm (16). The sensor (10) also includes an connecting component (22) electrically coupled to the sensing element (46) at a connection location that is fluidly isolated from the diaphragm (16) by the bond frame (70). The bond frame (70) is made of materials and the connecting component (22) is electrically coupled to the sensing element (46) by the same materials of the bond frame (70).

    MICRO MIRROR STRUCTURE WITH FLAT REFLECTIVE COATING
    3.
    发明申请
    MICRO MIRROR STRUCTURE WITH FLAT REFLECTIVE COATING 审中-公开
    具有平面反射涂层的微镜结构

    公开(公告)号：WO2004029692A2

    公开(公告)日：2004-04-08

    申请号：PCT/US2003/029076

    申请日：2003-09-16

    Applicant: ROSEMOUNT AEROSPACE INC.

    Inventor： GUO, Shuwen ,  HOFFMAN, Ross

    IPC: G02B26/08

    CPC classification number: G02B26/0833 ,  B41J2/465 ,  B81B1/006 ,  B81B2201/042 ,  G02B26/0866

    Abstract: A micro mirror structure including a plurality of individually movable mirrors. Each mirror has a generally concave shape from a top perspective at a temperature of about 20 degrees Celsius and has a generally convex shape from a top perspective at a temperature of about 85 degrees Celsius. In one embodiment, the radius of curvature may be greater than about 500 mm at a temperature of about 20 degrees Celsius and may be less than about -600 mm at a temperature of about 85 degrees Celsius at a thickness of about 10 microns. In another embodiment, the invention is a micro mirror structure including a plurality of individually movable mirrors arranged in an array. Each mirror includes a substrate, a diffusion barrier layer located above the substrate, and a reflective layer located above the diffusion barrier layer. The diffusion barrier layer generally limits the diffusion of the top reflective layer through the diffusion barrier layer.

    Abstract translation: 一种微镜结构，包括多个可单独移动的反射镜。 每个反射镜在大约20摄氏度的温度下具有从顶部透视图的大致凹入的形状，并且在约85摄氏度的温度下从顶部的角度具有大致凸形的形状。 在一个实施例中，在大约20摄氏度的温度下，曲率半径可以大于约500mm，并且在约85摄氏度的温度下可以在约10微米的厚度下小于约-600mm。 在另一个实施例中，本发明是一种微镜结构，其包括以阵列布置的多个单独可移动的反射镜。 每个反射镜包括衬底，位于衬底上方的扩散阻挡层和位于扩散阻挡层上方的反射层。 扩散阻挡层通常限制顶部反射层通过扩散阻挡层的扩散。

    METHOD FOR MAKING AN INFRARED DETECTOR AND INFRARED DETECTOR
    4.
    发明申请
    METHOD FOR MAKING AN INFRARED DETECTOR AND INFRARED DETECTOR 审中-公开
    制造红外探测器和红外探测器的方法

    公开(公告)号：WO2004023087A1

    公开(公告)日：2004-03-18

    申请号：PCT/US2003/028051

    申请日：2003-09-09

    Applicant: ROSEMOUNT AEROSPACE, INC.

    Inventor： GUO, Shuwen ,  WIEGELE, Thomas

    IPC: G01J5/00

    CPC classification number: G01J5/10 ,  G01H11/08 ,  G01J5/02 ,  G01J5/024 ,  G01J5/04 ,  G01J5/046 ,  G01J5/12

    Abstract: A detector including a base having a recess formed therein and a diaphragm generally extending across the recess. The detector further includes an infrared sensitive component or a piezoelectric or piezoresistive element located on, above or supported by the diaphragm. The diaphragm includes a material which is generally resistant to liquid chemical etchants and which has a thermal conductivity of less than about 0.005 Wcm -1 K -1 .

    Abstract translation: 一种检测器，包括具有形成在其中的凹部的基部和通常延伸穿过凹部的隔膜。 检测器还包括位于隔膜上方或由隔膜支撑的红外敏感元件或压电或压阻元件。 隔膜包括通常耐液体化学蚀刻剂并具有小于约0.005Wcm -1 K -1的热导率的材料。

    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER
    5.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER 审中-公开
    在氧化物层上制造包含SIC的半导体结构的方法

    公开(公告)号：WO2003017358A1

    公开(公告)日：2003-02-27

    申请号：PCT/US2002/022826

    申请日：2002-07-17

    Applicant: ROSEMOUNT AEROSPACE, INC.

    Inventor： ERIKSEN, Odd, Harald, Steen ,  GUO, Shuwen

    IPC: H01L21/762

    CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

    Abstract: A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO 2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.

    Abstract translation: 制备半导体结构的方法包括：（a）提供第一材料，其包括（i）包含硅的第一晶片，（ii）通过将硅的一部分转化为SiC而获得的至少一个SiC转换层，（iii） 至少一层非原生SiC施加到转化层，和（iv）施加到非本征SiC层的至少一个氧化物层; （b）在非本地SiC层的区域中注入离子，由此在其中建立限定非本征SiC层的第一部分和非本征SiC层的第二部分的植入区域; （c）提供至少一种附加材料，其包括（i）包含硅的第二晶片，和（ii）施加到所述第二晶片的表面的氧化物层; （d）将第一材料的氧化物层和材料的氧化物层粘合以提供第一材料和第二材料的组合; 和（e）在植入区域处分离非本地SiC层的第二部分与非本征SiC层的第一部分以提供。 所得的半导体结构包括可以是Si晶片的基底晶片，可以与基底晶片相邻的SiO 2的绝缘氧化物层和非本征SiC的有源顶层。 半导体结构可用于制造集成的电子设备，压力传感器，温度传感器或其他可用于诸如飞机发动机的高温环境中的仪器。

    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER
    6.
    发明公开
    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER 审中-公开
    方法用于生产具有SIC的半导体结构的氧化物层上

    公开(公告)号：EP1417705A1

    公开(公告)日：2004-05-12

    申请号：EP02750135.2

    申请日：2002-07-17

    Applicant: ROSEMOUNT AEROSPACE INC.

    Inventor： ERIKSEN, Odd, Harald, Steen ,  GUO, Shuwen

    IPC: H01L21/762 ,  H01L21/04 ,  H01L21/76 ,  G01L9/00

    CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

    Abstract: A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.

    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    9.
    发明公开
    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR 审中-公开
    高温固固压力传感器

    公开(公告)号：EP2082204A2

    公开(公告)日：2009-07-29

    申请号：EP07853561.4

    申请日：2007-09-19

    Applicant: Rosemount Aerospace Inc.

    Inventor： GUO, Shuwen ,  ERIKSEN, Odd Harald, Steen ,  POTASEK, David, P. ,  CHILDRESS, Kimiko J.

    IPC: G01L9/00

    CPC classification number: C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0042 ,  G01L19/0061 ,  G01L19/0609 ,  G01L19/147 ,  H01L2224/48472

    Abstract: A harsh environment transducer including: - a substrate (14) having a first surface and a second surface, the latter being exposed to the environment - a device layer sensor means (12) on the substrate (14) for measuring a parameter associated with the environment, including a single crystal semiconductor material having a thickness of less than about 0.5 microns - an output (50) contact on the substrate (14) and in electrical communication with the sensor means (12) - a package having an internal space communicating with the environment and receiving the substrate (14) such that its first surface is substantially isolated from the environment and its second surface is substantially exposed to the environment - a connecting component (22) coupled to the package - a wire (24) electrically connecting the connecting component (22) and the output contact (50) such that an output of the sensor means can be communicated. The external surface of the wire (24) and at least one of the output contact (50) and the connecting component (22) is substantially platinum.

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