FLEXIBLE SILICON STRAIN GAGE
    1.
    发明申请
    FLEXIBLE SILICON STRAIN GAGE 审中-公开
    柔性硅应变片

    公开(公告)号:WO0006983A9

    公开(公告)日:2000-05-25

    申请号:PCT/US9916900

    申请日:1999-07-27

    CPC classification number: G01L1/2293 G01L1/18 G01L9/0055

    Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

    Abstract translation: 包括应变感测元件的普通柔性应变计和支撑应变感测元件的大体柔性基底。 应变传感元件由单晶或多晶半导体材料制成。 本发明还包括一种用于形成大体柔性应变计的方法,包括选择具有一部分基材的晶片和位于其上的单晶或多晶半导体材料的部分的步骤。 该方法还包括以下步骤:从半导体材料中蚀刻应变感测元件,并将基本上柔性的衬底形成在所述感测元件上。

    Flexible silicon strain gage
    2.
    发明专利

    公开(公告)号:AU5544699A

    公开(公告)日:2000-02-21

    申请号:AU5544699

    申请日:1999-07-27

    Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

    3.
    发明专利
    未知

    公开(公告)号:DE69909099D1

    公开(公告)日:2003-07-31

    申请号:DE69909099

    申请日:1999-07-27

    Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The strain sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a portion of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

    FLEXIBLE SILICON STRAIN GAGE
    5.
    发明专利

    公开(公告)号:CA2338744A1

    公开(公告)日:2000-02-10

    申请号:CA2338744

    申请日:1999-07-27

    Abstract: A generally flexible strain gage comprising a strain sensing element, and a generally flexible substrate supporting the strain sensing element. The stra in sensing element is made of single crystal or polycrystalline semiconducting material. The invention also includes a method for forming a generally flexible strain gage comprising the step of selecting a wafer having a porti on of a base material and portion of a single crystal or polycrystalline semiconducting material located thereon. The method further comprises the steps of etching a strain sensing element out of the semiconducting material and forming a generally flexible substrate onto said sensing element.

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