PULSED ION BEAM ASSISTED DEPOSITION

    公开(公告)号:CA2186102A1

    公开(公告)日:1996-08-01

    申请号:CA2186102

    申请日:1996-01-23

    Applicant: SANDIA CORP

    Inventor: STINNETT REGAN W

    Abstract: The present invention is for a high-speed, commercial-scale means for deposition of films and coatings on a substrate. The PIBAD (pulsed ion beam assisted deposition) processes ¢Fig. 4! allow notonly deposition, but also special modes of post-deposition treatment of films and coatings, including annealing melting and regrowth ¢Fig. 4A!, shock wave treatment, and high-pressure plasma redeposition ¢Fig. 4B! all of which can alter the mechanical, cohesive, and corrosive properties of the final product. In one embodiment of the invention the power system comprises a motor (5) which drives an alternator (10). The alternator delivers a signal to a pulse compression system (15) which has two subsystems, a 1.mu.s pulse compressor (12), and a pulse forming line (14). The pulse compression system (15) provides pulses to a linear inductive voltage adder (LIVA)(20) which delivers the pulses to the ion beam source (25).

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