IN-SITU MEASUREMENT OF DEPOSITION ON REACTOR CHAMBER MEMBERS
    1.
    发明申请
    IN-SITU MEASUREMENT OF DEPOSITION ON REACTOR CHAMBER MEMBERS 审中-公开
    原位测量反应室内部沉积物

    公开(公告)号:WO9927333A9

    公开(公告)日:1999-08-26

    申请号:PCT/US9824897

    申请日:1998-11-20

    Abstract: A system (150) is disclosed that employs ultrasonic waves to perform in-situ measurements to determine the properties of films (152) deposited on substrates in the course of various semiconductor or processing steps. In one embodiment, a single transducer (156) excites incident acoustic waves at multiple frequencies that reflect from the films. The reflected waves are received by the same transducer. An analysis system (162) determines the phase shift of the received reflected waves and, based on the phase shift, determines the film properties. Other embodiments employ distinct source and receiving transducers. Embodiments are also disclosed that compensate the measured phase shift for temperature variations in the substrate. In one such system, temperature compensation is performed based on the processing of phase measurements made at multiple frequencies or incidence angles or with multiple ultrasonic modes. The disclosed techniques are equally applicable to determining the degree of erosion of chamber members.

    Abstract translation: 公开了一种系统(150),其采用超声波来执行原位测量以确定在各种半导体或处理步骤过程中沉积在衬底上的膜(152)的性质。 在一个实施例中,单个换能器(156)以多个从膜反射的频率激发入射声波。 反射波由同一个换能器接收。 分析系统(162)确定接收到的反射波的相移,并且基于相移来确定膜特性。 其他实施例采用不同的源和接收换能器。 本发明还公开了补偿所测量的基板中温度变化的相移的实施例。 在一个这样的系统中,基于在多个频率或入射角或多个超声波模式下进行的相位测量的处理来执行温度补偿。 所公开的技术同样适用于确定腔室构件的侵蚀程度。

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