公开(公告)号：WO0215238A3

公开(公告)日：2002-10-03

申请号：PCT/US0125196

申请日：2001-08-10

Applicant: SENSYS INSTR CORP

Inventor： WEBER-GRABAU MICHAEL ,  TONG EDRIC H ,  NORTON ADAM E ,  STANKE FRED E ,  CAHILL JAMES M ,  RUTH DOUGLAS E ,  JOHNSON KENNETH C

IPC: H01L21/66 ,  G01N21/956 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  G01R31/311

CPC classification number: G03F7/70625 ,  G01N21/956

Abstract: A wafer measurement station (19) integrated within a process tool (11) has a scatterometry instrument (35) for measuring patterned features on wafers (31). A wafer handler (17) feeds wafers between a cassette (15) and one or more process stations (13) of the process tool. Wafers presented to the measurement station are held on a wafer support (33), which may be moveable, and a scatterometry instrument has an optical measurement system (41) that is moveable by a stage (39) over the wafer support. A window (37) isolates the moveable optics from the wafer. The optical measurement system are microscope-based optics forming a low NA system. The illumination spot size at the wafer is larger than a periodicity of the patterned features, and data processing uses a scattering model to analyze the optical signature of the collected light.

Abstract translation: 集成在处理工具（11）内的晶片测量站（19）具有用于测量晶片（31）上的图案特征的散射仪（35）。 晶片处理器（17）在处理工具的盒（15）和一个或多个处理站（13）之间馈送晶片。 提供给测量站的晶片保持在可以是可移动的晶片支撑件（33）上，并且散射仪器具有可由晶片支撑件上的台（39）移动的光学测量系统（41）。 窗口（37）将可移动光学器件与晶片隔离。 光学测量系统是形成低NA系统的基于显微镜的光学器件。 晶片上的照明光点尺寸大于图案化特征的周期，数据处理使用散射模型来分析所收集的光的光学特征。

公开(公告)号：WO0057127A9

公开(公告)日：2002-03-28

申请号：PCT/US0007709

申请日：2000-03-22

Applicant: SENSYS INSTR CORP ,  STANKE FRED E ,  WEBER GRABAU MICHAEL ,  RUTH DOUGLAS E ,  TONG EDRIC H ,  CAHILL JAMES M JR ,  CARLISLE CLINTON ,  BURKE ELLIOT ,  PHAM HUNG

Inventor： STANKE FRED E ,  WEBER-GRABAU MICHAEL ,  RUTH DOUGLAS E ,  TONG EDRIC H ,  CAHILL JAMES M JR ,  CARLISLE CLINTON ,  BURKE ELLIOT ,  PHAM HUNG

IPC: B24B49/12 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/95 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  C23C16/52 ,  G01N21/88 ,  H01L21/304

CPC classification number: B24B49/12 ,  G01B11/0625 ,  G01B11/30 ,  G01N21/211 ,  G01N21/9501 ,  H01L21/67 ,  H01L22/12

Abstract: This invention is an apparatus for imaging metrology, which in particular embodiments may be integrated with a processor station such that a metrology station is apart from but coupled to a process station. The metrology station is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other.

Abstract translation: 本发明是一种用于成像测量的装置，其在特定实施例中可以与处理器站集成，使得计量站离开处理站而不是耦合到处理站。 计量站设置有具有包含测量区域的第一视野的第一成像照相机。 替代实施例包括具有第二视野的第二成像相机。 优选实施例包括宽带紫外光源，但是其他实施例可以具有宽或窄光带宽的可见光或近红外光源。 包括宽带宽源的实施例通常包括光谱仪或成像光谱仪。 具体实施例可以包括弯曲的，反射光学的或由液体润湿的测量区域。 在典型的实施例中，计量站和测量区域被配置为具有相对于彼此的4个移动自由度。

公开(公告)号：WO0216893A3

公开(公告)日：2002-08-29

申请号：PCT/US0141770

申请日：2001-08-17

Applicant: SENSYS INSTR CORP

Inventor： NORTON ADAM E ,  JOHNSON KENNETH C ,  STANKE FRED E

IPC: G01J3/02 ,  G01J3/28 ,  G01N21/27 ,  G01N21/31 ,  G01N21/47 ,  G01N21/956 ,  G02B5/30 ,  G02B21/36 ,  G02B27/28 ,  G02B21/06

CPC classification number: G01N21/31 ,  G01J3/02 ,  G01J3/0224 ,  G01J3/0243 ,  G01J3/28 ,  G01N21/956 ,  G02B5/3083 ,  G02B27/28

Abstract: A small-spot imaging, spectrometry instrument (Fig. 1) for measuring properties of a sample (27) has a polarization-scrambling element, such as a Lyot depolarizer (19), incorporatied between the polarization-introducing components of the system, such as the beamsplitter (17), and the microscope objective (21) of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent,l may be narrower than the wavelength resolution of the instrument.

Abstract translation: 用于测量样品（27）的性质的小点成像光谱仪（图1）具有包括在系统的偏振引入组分之间的偏振加扰元件，例如Lyot去极化器（19），诸如 作为分束器（17）和系统的显微镜物镜（21）。 Lyot去极化器使波长偏振。 可以通过数据处理技术去除所得测量光谱中的正弦扰动，或者如果去偏振器是厚的或高度双折射的，则l可能比仪器的波长分辨率窄。

公开(公告)号：WO0214840A3

公开(公告)日：2002-08-15

申请号：PCT/US0124940

申请日：2001-08-09

Applicant: SENSYS INSTR CORP

Inventor： JOHNSON KENNETH C ,  STANKE FRED E

IPC: G01B11/00 ,  G01B11/14 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G02B5/18 ,  G06F17/10 ,  H01L21/66 ,  G01B11/30

CPC classification number: G02B5/18 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956

Abstract: A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure (501) as part of a real-time optical measurement process. The interpolated optical response (602) is a continuous and (in a preferred embodiment) (801) smooth function of measurement parameters (X), and it matches the theoretically-calculated optical response at the database-stored interpolation points (701, 702).

Abstract translation: 使用数据库插值方法来快速计算作为实时光学测量过程的一部分的衍射微结构（501）的预测光学响应特性。 内插光学响应（602）是连续的（在优选实施例中）（801）测量参数（X）的平滑函数，并且它与在数据库存储的插值点（701,702）处的理论计算的光学响应相匹配， 。

公开(公告)号：WO9927333A9

公开(公告)日：1999-08-26

申请号：PCT/US9824897

申请日：1998-11-20

Applicant: SENSYS INSTR CORP ,  UNIV LELAND STANFORD JUNIOR

Inventor： STANKE FRED E ,  KHURI-YAKUB B T ,  DEGERTEKIN FAHRETTIN LEVENT ,  PHAM HUNG

IPC: G01H5/00 ,  G01N29/07 ,  G01N29/32 ,  G01N29/34

CPC classification number: G01H5/00 ,  G01N29/075 ,  G01N29/326 ,  G01N29/348 ,  G01N2291/012 ,  G01N2291/0231 ,  G01N2291/02854 ,  G01N2291/02881 ,  G01N2291/0421 ,  G01N2291/0422

Abstract: A system (150) is disclosed that employs ultrasonic waves to perform in-situ measurements to determine the properties of films (152) deposited on substrates in the course of various semiconductor or processing steps. In one embodiment, a single transducer (156) excites incident acoustic waves at multiple frequencies that reflect from the films. The reflected waves are received by the same transducer. An analysis system (162) determines the phase shift of the received reflected waves and, based on the phase shift, determines the film properties. Other embodiments employ distinct source and receiving transducers. Embodiments are also disclosed that compensate the measured phase shift for temperature variations in the substrate. In one such system, temperature compensation is performed based on the processing of phase measurements made at multiple frequencies or incidence angles or with multiple ultrasonic modes. The disclosed techniques are equally applicable to determining the degree of erosion of chamber members.

Abstract translation: 公开了一种系统（150），其采用超声波来执行原位测量以确定在各种半导体或处理步骤过程中沉积在衬底上的膜（152）的性质。 在一个实施例中，单个换能器（156）以多个从膜反射的频率激发入射声波。 反射波由同一个换能器接收。 分析系统（162）确定接收到的反射波的相移，并且基于相移来确定膜特性。 其他实施例采用不同的源和接收换能器。 本发明还公开了补偿所测量的基板中温度变化的相移的实施例。 在一个这样的系统中，基于在多个频率或入射角或多个超声波模式下进行的相位测量的处理来执行温度补偿。 所公开的技术同样适用于确定腔室构件的侵蚀程度。

公开(公告)号：WO0216893B1

公开(公告)日：2003-01-09

申请号：PCT/US0141770

申请日：2001-08-17

Applicant: SENSYS INSTR CORP

Inventor： NORTON ADAM E ,  JOHNSON KENNETH C ,  STANKE FRED E

IPC: G01J3/02 ,  G01J3/28 ,  G01N21/27 ,  G01N21/31 ,  G01N21/47 ,  G01N21/956 ,  G02B5/30 ,  G02B21/36 ,  G02B27/28 ,  G02B21/06

CPC classification number: G01N21/31 ,  G01J3/02 ,  G01J3/0224 ,  G01J3/0243 ,  G01J3/28 ,  G01N21/956 ,  G02B5/3083 ,  G02B27/28

Abstract: A small-spot imaging, spectrometry instrument (Fig. 1) for measuring properties of a sample (27) has a polarization-scrambling element, such as a Lyot depolarizer (19), incorporatied between the polarization-introducing components of the system, such as the beamsplitter (17), and the microscope objective (21) of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent,l may be narrower than the wavelength resolution of the instrument.

Abstract translation: 用于测量样品（27）的性质的小点成像光谱仪（图1）具有包括在系统的偏振引入组分之间的偏振加扰元件，例如Lyot去极化器（19），诸如 作为分束器（17）和系统的显微镜物镜（21）。 Lyot去极化器使波长偏振。 可以通过数据处理技术去除所得测量光谱中的正弦扰动，或者如果去偏振器是厚的或高度双折射的，则l可能比仪器的波长分辨率窄。

公开(公告)号：WO0214844A3

公开(公告)日：2002-08-15

申请号：PCT/US0141628

申请日：2001-08-07

Applicant: SENSYS INSTR CORP

Inventor： STANKE FRED E

IPC: G01N21/31 ,  G01N21/94 ,  G01N21/95 ,  G01N21/88 ,  B24B37/04 ,  B24B49/05 ,  B24B49/12

CPC classification number: G01N21/9501 ,  G01N21/31 ,  G01N21/94

Abstract: An apparatus (200) for and method of determining the states on a wafer (W) to be processed, e.g., whether residue in the form of metal in left on the surface (230) of a wafer after chemical-mechanical polishing. The method comprises the steps of calculating first spectral signatures (Fig. 7) from a first set of measurement sites on one or more training wafers. Each measurement site is known to be one of two or more states. In the case of only two states, the states could be "residue present" and "residue absent" states. The next step involves correlation (Figs. 12A and 12B) the first spectral signatures to the states on the training wafer(s). The next step then involves calculating second spectral signatures from a second set of measurement sites on a wafer where the states are unknown. The final step is determining the states on the wafer to be processed based on the second spectral signatures.

Abstract translation: 一种用于确定待处理的晶片（W）上的状态的装置（200）和方法，例如在化学机械抛光之后是否在晶片的表面（230）上的左侧的金属形式的残留物。 该方法包括以下步骤：从一个或多个训练晶片上的第一组测量点计算第一光谱特征（图7）。 已知每个测量站点是两个或多个状态之一。 在只有两个状态的情况下，状态可以是“剩余存在”和“不存在”状态。 下一步骤涉及到训练晶片上的状态的第一光谱特征相关（图12A和12B）。 接下来的步骤涉及从状态未知的晶片上的第二组测量位置计算第二光谱特征。 最后一步是根据第二个光谱特征确定要处理的晶片上的状态。

公开(公告)号：WO0215261A2

公开(公告)日：2002-02-21

申请号：PCT/US0124886

申请日：2001-08-09

Applicant: SENSYS INSTR CORP

Inventor： WEBER-GRABAU MICHAEL ,  ANGUELOV IVELIN A ,  TONG EDRIC H ,  NORTON ADAM E ,  STANKE FRED E ,  HYATT BADRU D

IPC: B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  H01L21/66

CPC classification number: B24B37/013 ,  B24B49/02 ,  B24B49/12

Abstract: A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described..

Abstract translation: 一种用于测量不需要水浴的晶片（30）的薄膜厚度特性的晶片测量装置（10,110）以及复杂的晶片处理装置的方法。 该装置包括具有用于支撑晶片的上表面（20）的卡盘（16）和周边（18）。 还包括用于测量一个或多个膜厚度性质的计量模块（50）。 测量模块布置在卡盘上表面附近并且具有测量窗口（60），其具有基本上平行于卡盘上表面布置的下表面（64），从而限定开放容积（68）。 该设备包括与开放容积通过喷嘴（70）流体连通的供水系统，用于以不会在体积内产生气泡的方式使水流过并填充该体积。 围绕卡盘的集水区（40）可用于捕获流出体积的水。 还描述了执行一个或多个晶片膜性质的测量的方法。

公开(公告)号：AU7924701A

公开(公告)日：2002-02-25

申请号：AU7924701

申请日：2001-08-09

Applicant: SENSYS INSTR CORP

Inventor： JOHNSON KENNETH C ,  STANKE FRED E

IPC: G01B11/00 ,  G01B11/14 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G02B5/18 ,  G06F17/10 ,  H01L21/66 ,  G01B11/30

Abstract: A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure as part of a real-time optical measurement process. The interpolated optical response is a continuous and (in a preferred embodiment) smooth function of measurement parameters, and it matches the theoretically-calculated optical response at the database-stored interpolation points.

公开(公告)号：AU7924201A

公开(公告)日：2002-02-25

申请号：AU7924201

申请日：2001-08-09

Applicant: SENSYS INSTR CORP

Inventor： WEBER-GRABAU MICHAEL ,  ANGUELOV IVELIN A ,  TONG EDRIC H ,  NORTON ADAM E ,  STANKE FRED E ,  HYATT BADRU D

IPC: B24B37/013 ,  B24B49/02 ,  B24B49/12 ,  H01L21/66

Abstract: A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described.