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公开(公告)号：DE68918390T2
公开(公告)日：1995-03-02
申请号：DE68918390
申请日：1989-10-26
Applicant: SGS THOMSON MICROELECTRONICS
Inventor： BALLARO' DAVID , PATTI ALFONSO , FERLA GIUSEPPE , FRISINA FERRUCCIO
IPC: H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/082 , H01L29/732
Abstract: The emitter region of the speed-up transistor is created in the base of the final transistor of the Darlington device and has a very low dope concentration and thickness.
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