公开(公告)号：FR2772967B1

公开(公告)日：2004-01-02

申请号：FR9716433

申请日：1997-12-18

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PIO FEDERICO ,  ZATELLI NICOLA ,  SOURGEN LAURENT ,  LISART MATHIEU

IPC: G11C16/02 ,  H01L21/8247 ,  H01L27/02 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C5/00 ,  G06F12/14

公开(公告)号：ITTO971073A1

公开(公告)日：1999-06-11

申请号：ITTO971073

申请日：1997-12-10

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： CREMONESI CARLO ,  ZATELLI NICOLA

IPC: G01N20060101 ,  H01L23/544 ,  H05K20060101

公开(公告)号：ITMI971167A1

公开(公告)日：1998-11-20

申请号：ITMI971167

申请日：1997-05-20

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZATELLI NICOLA ,  PIO FEDERICO ,  VAJANA BRUNO

IPC: H01L21/8247 ,  H01L27/115

公开(公告)号：IT1296624B1

公开(公告)日：1999-07-14

申请号：ITTO971073

申请日：1997-12-10

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZATELLI NICOLA ,  CREMONESI CARLO

IPC: H01L23/544

Abstract: The structure allows checking an integrated electronic device comprising an oxide layer to be measured located above a doped pocket of a wafer of doped semiconductor material and arranged adjacent to a gate region of polycrystalline semiconductor material. The structure is formed at a suitable point of the wafer and comprises an oxide test region of the same material, having the same thickness and the same electrical characteristics as the oxide layer to be measured and a polycrystalline region of the same material, having the same thickness and the same electrical characteristics as the gate region. The polycrystalline region extends preferably along the perimeter of a square and delimits laterally the oxide test region, the area of which is greater than the area of the oxide layer to be measured so as to allow non-destructive testing, on-line, of the oxide layer to be measured during an early stage of the manufacturing process.

公开(公告)号：FR2772967A1

公开(公告)日：1999-06-25

申请号：FR9716433

申请日：1997-12-18

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PIO FEDERICO ,  ZATELLI NICOLA ,  SOURGEN LAURENT ,  LISART MATHIEU

IPC: G11C16/02 ,  H01L21/8247 ,  H01L27/02 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C5/00 ,  G06F12/14

公开(公告)号：IT1292337B1

公开(公告)日：1999-01-29

申请号：ITMI971167

申请日：1997-05-20

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZATELLI NICOLA ,  PIO FEDERICO ,  VAJANA BRUNO

IPC: H01L21/8247 ,  H01L27/115