公开(公告)号：IT9006610D0

公开(公告)日：1990-05-31

申请号：IT661090

申请日：1990-05-31

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ZAMBRANO RAFFAELE ,  GRIMALDI GIUSEPPE

IPC: H01L21/8249 ,  H01L21/76 ,  H01L27/06 ,  H01L27/088 ,  H01L29/78

Abstract: By using a diffused insulation region placed around the body region and with deeper junction and hence longer curvature radius than the typical body/drain junction values, in combination with an appropriate layout of the buried drain region underneath the power stage, breakdown voltage is maximized without compromising the Ron series resistance of the power stage and the reliability of the device.