公开(公告)号：EP0575688A3

公开(公告)日：1994-03-16

申请号：EP92830552.3

申请日：1992-10-01

Applicant: SGS-THOMSON MICROELECTRONICS S.r.l.

Inventor： Ghio, Emilio Giambattista ,  Meroni, Giuseppe ,  Re, Danilo ,  Baldi, Livio

IPC: H01L27/112 ,  H01L21/82

CPC classification number: H01L27/11266 ,  H01L27/112

Abstract: ROM memories made in MOS or CMOS technology with LDD cells may be programmed advantageously in a relatively advanced stage of fabrication by decoupling an already formed drain region from the channel region of cells to be permanently made nonconductive (programmed) by implanting a dopant in an amount sufficient to invert the type of conductivity in a portion of the drain region adjacent to the channel region. In CMOS processes, the programming mask may be a purposely modified mask commonly used for implanting source/drain regions of transistors of a certain type of conductivity. By using high-energy implantation and a dedicated mask, the programming may be effected at even later stages of the fabrication process.

Abstract translation: 采用MOS或CMOS技术制造的具有LDD单元的ROM存储器可以有利地在相对高级的制造阶段通过将已形成的漏极区与单元的沟道区解耦以通过注入一定量的掺杂剂而永久地形成非导电（编程） 足以反转与沟道区相邻的漏极区的一部分中的导电类型。 在CMOS工艺中，编程掩模可以是通常用于注入某种导电类型的晶体管的源极/漏极区的有意修改的掩模。 通过使用高能量注入和专用掩模，编程可以在制造过程的甚至更晚的阶段进行。

公开(公告)号：EP0575688B1

公开(公告)日：1998-05-27

申请号：EP92830552.3

申请日：1992-10-01

Applicant: SGS-THOMSON MICROELECTRONICS s.r.l.

Inventor： Ghio, Emilio Giambattista ,  Meroni, Giuseppe ,  Re, Danilo ,  Baldi, Livio

IPC: H01L27/112 ,  H01L21/8246

CPC classification number: H01L27/11266 ,  H01L27/112

公开(公告)号：EP0575688A2

公开(公告)日：1993-12-29

申请号：EP92830552.3

申请日：1992-10-01

Applicant: SGS-THOMSON MICROELECTRONICS S.r.l.

Inventor： Ghio, Emilio Giambattista ,  Meroni, Giuseppe ,  Re, Danilo ,  Baldi, Livio

IPC: H01L27/112 ,  H01L21/82

CPC classification number: H01L27/11266 ,  H01L27/112

Abstract: ROM memories made in MOS or CMOS technology with LDD cells may be programmed advantageously in a relatively advanced stage of fabrication by decoupling an already formed drain region from the channel region of cells to be permanently made nonconductive (programmed) by implanting a dopant in an amount sufficient to invert the type of conductivity in a portion of the drain region adjacent to the channel region. In CMOS processes, the programming mask may be a purposely modified mask commonly used for implanting source/drain regions of transistors of a certain type of conductivity. By using high-energy implantation and a dedicated mask, the programming may be effected at even later stages of the fabrication process.

Abstract translation: 在具有LDD单元的MOS或CMOS技术中制造的ROM存储器可以通过将已经形成的漏极区域与单元的沟道区域去耦合而被有利地编程在相对较先进的制造阶段，以通过将量子点 足以反转与沟道区相邻的漏极区的一部分中的导电性的类型。 在CMOS工艺中，编程掩模可以是通常用于注入某种导电性晶体管的源极/漏极区域的有意修改的掩模。 通过使用高能量注入和专用掩模，编程可以在制造过程的甚至更晚阶段进行。