公开(公告)号：EP3220628A4

公开(公告)日：2017-10-18

申请号：EP15861720

申请日：2015-07-08

Applicant: SHIMADZU CORP

Inventor： HIROSE RYUTA ,  KARASAWA TOMOHIRO ,  TOMINAGA HIDEKI

IPC: G01J1/42 ,  G01J1/46 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/378

CPC classification number: G01J1/46 ,  G01J3/2803 ,  G01J2001/446 ,  H04N5/3575 ,  H04N5/3741 ,  H04N5/37457 ,  H04N5/378

Abstract: Provided is a photodetector 10 including: a plurality of photoelectric conversion elements 101 arranged within a photosensitive-element area 11 constituting one photosensitive element; the plurality of detection circuits 14 each of which is provided for one of the plurality of photoelectric conversion elements 101, each of the detection circuits including a capacitor 102; and a signal processing section 19 for totaling output signals produced by the plurality of detection circuits 14.

公开(公告)号：EP2833106A4

公开(公告)日：2015-04-22

申请号：EP13767497

申请日：2013-03-26

Applicant: SHIMADZU CORP ,  UNIV TOHOKU

Inventor： TOMINAGA HIDEKI ,  HIROSE RYUTA ,  TAKUBO KENJI ,  SUGAWA SHIGETOSHI ,  KURODA RIHITO

IPC: G01J3/36 ,  G01J3/28 ,  G02B1/11

CPC classification number: G01J3/2803 ,  G01J3/0213 ,  G01J3/0229 ,  G01J2003/123 ,  G01J2003/1234 ,  G01J2003/2806 ,  G02B1/116 ,  H01L27/1462 ,  H01L27/14643

Abstract: A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure (the material and/or thickness of the coating) of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO 2 coating layer (104) on the silicon substrate (102) and an Al 2 O 3 coating layer (105) are common to all the photodiodes, while the structure of the upper layers are modified with respect to the wavelength. Within an ultraviolet wavelength region, the coating structure is more finely changed with respect to the wavelength. By such a design, the transmittance (the rate at which incident light reaches a photoelectric conversion region) can be improved while making the best efforts to avoid a complex manufacturing process. As a result, high levels of sensitivity can be achieved without omission even within the ultraviolet wavelength region in a spectrometric measurement system using a photodiode array detector.

公开(公告)号：EP2911384A4

公开(公告)日：2015-11-04

申请号：EP13851721

申请日：2013-10-28

Applicant: SHIMADZU CORP ,  UNIV TOHOKU

Inventor： TOMINAGA HIDEKI ,  HIROSE RYUTA ,  TAKUBO KENJI ,  SUGAWA SHIGETOSHI ,  KURODA RIHITO

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/374

CPC classification number: H04N5/378 ,  H01L27/14609 ,  H04N5/3692 ,  H04N5/3742 ,  H04N5/3765

公开(公告)号：EP2453477A4

公开(公告)日：2014-02-26

申请号：EP10797019

申请日：2010-06-23

Applicant: SHIMADZU CORP ,  UNIV TOHOKU

Inventor： KONDO YASUSHI ,  TOMINAGA HIDEKI ,  TAKUBO KENJI ,  HIROSE RYUTA ,  SUGAWA SHIGETOSHI ,  MUTOH HIDEKI

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461

公开(公告)号：JP2011035382A

公开(公告)日：2011-02-17

申请号：JP2010142763

申请日：2010-06-23

Applicant: Link Research Kk ,  Shimadzu Corp ,  Tohoku Univ ,  リンク・リサーチ株式会社 ,  国立大学法人東北大学 ,  株式会社島津製作所

Inventor： KONDO YASUSHI ,  TOMINAGA HIDEKI ,  TAKUBO KENJI ,  HIROSE RYUTA ,  SUGAWA SHIGETOSHI ,  MUTO HIDEKI

IPC: H01L27/146 ,  H04N5/369

CPC classification number: H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461

Abstract: PROBLEM TO BE SOLVED: To improve the detection sensitivity and an S/N of a solid state imaging element for extremely high-speed imaging at million frames per second and more without impairing imaging speed. SOLUTION: A floating diffusion (FD) region 13 is formed at the edge of a light receiving surface of an embedded photodiode, and with a transfer gate electrode 12 therebetween. A first region 111 with a radially extending section centered on the FD region 13, and a second region 112 located outside the first region are created in the roughly fan-shaped light receiving surface. Impurities of the same conductivity types as signal electrical charges collected in the first region 111 are introduced, thus forming an electric field which directs the signal electrical charge from the radially extending section toward the center according to the three-dimensional electric field effect. As a result, an electrical charge transfer time is reduced. Additionally, since a circuit element for a subsequent stage can be disposed adjacent to the FD region 13, the parasitic capacitance of the FD region 13 can be reduced and a highly-sensitive element can be obtained. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提高用于以每秒百万帧以上的超高速成像的固态成像元件的检测灵敏度和S / N，而不损害成像速度。 解决方案：在嵌入式光电二极管的光接收表面的边缘处形成浮动扩散（FD）区域13，并且其间具有传输栅电极12。 在大致扇形的光接收表面上产生具有以FD区域13为中心的径向延伸部分的第一区域111和位于第一区域外部的第二区域112。 引入与在第一区域111中收集的信号电荷相同的导电类型的杂质，从而形成根据三维电场效应将信号电荷从径向延伸部分朝向中心引导的电场。 结果，减少了电荷转移时间。 此外，由于用于后级的电路元件可以被布置为与FD区域13相邻，所以可以减小FD区域13的寄生电容并且可以获得高灵敏度元件。 版权所有（C）2011，JPO＆INPIT