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    PHOTOGRAPHIC APPARATUS AND SYNCHRONOUS PHOTOGRAPHY TIMING CONTROLLER
    2.
    发明专利
    PHOTOGRAPHIC APPARATUS AND SYNCHRONOUS PHOTOGRAPHY TIMING CONTROLLER 未知

    公开(公告)号：CA2458591A1

    公开(公告)日：2004-08-28

    申请号：CA2458591

    申请日：2004-02-24

    Applicant: SHIMADZU CORP ,  ETOH TAKEHARU

    Inventor： KONDO YASUSHI ,  TOMINAGA HIDEKI ,  SOYA HIDEKI ,  ETOH TAKEHARU

    IPC: H04N5/232 ,  G03B15/08 ,  G03B15/16 ,  G03B29/00 ,  G03B39/00 ,  H04N5/225 ,  H04N5/235 ,  H04N5/30 ,  H04N7/18 ,  H04N9/09 ,  H04N5/335

    Abstract: In an apparatus according to this invention, a single synchronous photography timing controller supplies cameras for synchronous photography, with an external clock signal for controlling progress of a photographic sequence, an external reset signal for resetting the photographic sequence, and an external trigger signal for starting high-speed photography, all in a coordinated manner. Consequently, a timewise corresponding relationship is maintained between the external clock signals and between the external reset signals being supplied. The external reset signals reset photographic sequences of the respective cameras, so that the photographic sequences also progress in a timewise corresponding relationship. The high-speed photography of the cameras started by the external trigger signals supplied in the coordinated manner progress in a strictly timewise corresponding relationship. Thus, the cameras are synchronized accurately to perform the high-speed photography.

    SOLID STATE IMAGING ELEMENT AND IMAGING DEVICE
    5.
    发明公开
    SOLID STATE IMAGING ELEMENT AND IMAGING DEVICE 有权
    固态图像元件和成像系统

    公开(公告)号：EP2192764A4

    公开(公告)日：2013-01-02

    申请号：EP08828905

    申请日：2008-09-04

    Applicant: UNIV TOHOKU ,  SHIMADZU CORP

    Inventor： SUGAWA SHIGETOSHI ,  KONDO YASUSHI ,  TOMINAGA HIDEKI

    IPC: H04N5/374 ,  H04N5/232

    CPC classification number: H04N5/378 ,  H04N5/374

    Abstract: A pixel output line (14) is independently provided for each of the pixels arranged in a two-dimensionally array within a pixel area so that pixel signals can be sequentially written in a plurality of memory sections (22) through the pixel output lines (14). When a plurality of frames of pixel signals are held in the memory sections (22), the pixel signals corresponding to two arbitrarily selected frames are read and respectively stored in sample-and-hold circuits (61 and 62), and their difference is obtained. Then, the difference signals corresponding to a predetermined range of the image are integrated, and the integrated value is compared with a threshold. If the integrated value exceeds the threshold, it is presumed that a change in an imaging object has occurred, and a pulse generation circuit (66) generates a trigger signal. By controlling the discontinuation and other imaging actions according to this trigger signal, it is possible to correctly take high-speed images of the situation before or after the occurrence of an objective phenomenon.

    PHOTODIODE ARRAY FOR SPECTROSCOPIC MEASUREMENT, AND SPECTROSCOPIC MEASUREMENT APPARATUS
    8.
    发明公开
    PHOTODIODE ARRAY FOR SPECTROSCOPIC MEASUREMENT, AND SPECTROSCOPIC MEASUREMENT APPARATUS 审中-公开
    光二极管阵列，用于光谱测量光谱测量和设备

    公开(公告)号：EP2833106A4

    公开(公告)日：2015-04-22

    申请号：EP13767497

    申请日：2013-03-26

    Applicant: SHIMADZU CORP ,  UNIV TOHOKU

    Inventor： TOMINAGA HIDEKI ,  HIROSE RYUTA ,  TAKUBO KENJI ,  SUGAWA SHIGETOSHI ,  KURODA RIHITO

    IPC: G01J3/36 ,  G01J3/28 ,  G02B1/11

    CPC classification number: G01J3/2803 ,  G01J3/0213 ,  G01J3/0229 ,  G01J2003/123 ,  G01J2003/1234 ,  G01J2003/2806 ,  G02B1/116 ,  H01L27/1462 ,  H01L27/14643

    Abstract: A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure (the material and/or thickness of the coating) of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO 2 coating layer (104) on the silicon substrate (102) and an Al 2 O 3 coating layer (105) are common to all the photodiodes, while the structure of the upper layers are modified with respect to the wavelength. Within an ultraviolet wavelength region, the coating structure is more finely changed with respect to the wavelength. By such a design, the transmittance (the rate at which incident light reaches a photoelectric conversion region) can be improved while making the best efforts to avoid a complex manufacturing process. As a result, high levels of sensitivity can be achieved without omission even within the ultraviolet wavelength region in a spectrometric measurement system using a photodiode array detector.

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