Abstract:
기판 장치는 접지를 제공하는 층(240) 또는 전도성 소자 위에 있는 VSD 물질(230)이 내장된 층을 포함한다. 보호될 회로 소자에 연결된 전극(210)은 기판의 두께 내로 연장되어서 VSD층과 접촉하게 한다. 회로 소자가 정상 전압하에서 작동되면, VSD층은 유전체이지만 접지에 연결되지 않는다. 회로 소자 상에 일시적 전기 현상이 일어나면, VSD층은 즉시 전도성 상태로 절환하여 제 1 전극이 접지에 연결된다.
Abstract:
Una composición que comprende:un aglutinante;material orgánico que es conductor o semiconductor, en el que dicho material orgánico es soluble en un disolvente oestá dispersado dentro del aglutinante a escala nanoscópica; ypartículas conductoras y/o semiconductoras distintas de dicho material orgánico y distribuidas uniformemente dentrodel aglutinante;en el que se combinan dicho material orgánico y dichas partículas conductoras y/o semiconductoras paraproporcionar a dicha composición la característica de ser: (i) dieléctrica en ausencia de un voltaje superiora un nivel de voltaje característico; y (ii) conductora si la aplicación de dicho voltaje es superior almencionado nivel de voltaje característico;en el que el material orgánico incluye nanotubos de carbono con paredes únicas y/o múltiples.
Abstract:
One or more embodiments provide for a composition that includes (i) organic material that is conductive or semi-conductive, and (ii) conductor and/or semiconductor particles other than the organic material. The organic material and the conductor and/or semiconductor particles are combined to provide the composition with a characteristic of being (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of the voltage exceeding the characteristic voltage level. FIG. 3A
Abstract:
One or more embodiments provide for a composition that includes (i) organic material that is conductive or semi-conductive, and (ii) conductor and/or semiconductor particles other than the organic material. The organic material and the conductor and/or semiconductor particles are combined to provide the composition with a characteristic of being (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of the voltage exceeding the characteristic voltage level.
Abstract:
VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING HIGH ASPECTRATIO PARTICLESAbstractA composition of voltage switchable dielectric (VSD) material that utilizes semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material.Figure 3A
Abstract:
A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a conductor shell, so as to form a conductor-on- conductor core shell particle constituent for the VSD material.
Abstract:
A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.
Abstract:
A wireless communication device, such as an RFID tag, is provided material that is dielectric, unless a voltage is applied that exceeds the materials characteristic voltage level. In the presence of such voltage, the material becomes conductive. The integration of such material into the device may be mechanical and/or electrical.
Abstract:
A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a shell, the shell of each core shelled particle being (i) multilayered, and/or (ii) heterogeneous.