COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS
    1.
    发明申请
    COATED ARTICLE AND CHEMICAL VAPOR DEPOSITION PROCESS 审中-公开
    涂层制品和化学气相沉积工艺

    公开(公告)号:WO2014011251A2

    公开(公告)日:2014-01-16

    申请号:PCT/US2013033807

    申请日:2013-03-26

    Applicant: SILCOTEK CORP

    Inventor: SMITH DAVID A

    Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

    Abstract translation: 公开了涂覆制品和化学气相沉积工艺。 涂覆制品包括通过化学气相沉积施加到涂覆制品上的官能化层。 官能化层是选自由氧化后功能化层,有机氟化处理层,氟硅烷处理层,三甲基硅烷处理表面,有机氟三烷氧基硅烷处理层,有机氟甲硅烷基氢化物处理层,有机氟甲硅烷基处理层 (全氟丁基)乙烯处理层,(全氟辛基)乙烯处理层,以及(全氟辛基)乙烯处理层,和(全氟丁基)乙烯处理层, 它们的组合。 该过程包括应用功能化层。

    Recubrimiento, artículo y método de deposición química de vapor

    公开(公告)号:ES2859458T3

    公开(公告)日:2021-10-04

    申请号:ES10771619

    申请日:2010-10-26

    Applicant: SILCOTEK CORP

    Abstract: Un método (200) de deposición química de vapor térmica, comprendiendo el método (200): la preparación de (202) un sustrato (100) en una cámara de deposición química de vapor; la descomposición térmica (204) de dimetilsilano en la cámara de deposición química de vapor para formar un recubrimiento (102), realizándose la descomposición térmica en ausencia de energías de deposición adicionales, tales como campos de plasma y microondas, y en las siguientes condiciones: - a una presión de entre 6,8948x10-3 MPa (6,8948x10-2 bar (1,0 l.p.c.a.)) y 0,68948 MPa (6,8948 bar (100 l.p.c.a.)), preferentemente a una presión de entre 3,4474x10-2 MPa (3,4474x10-1 bar (5 l.p.c.a.)) y aproximadamente 0,27579 MPa (2,7579 bar (40 l.p.c.a.)); y - a una temperatura de entre 300 °C y 600 °C; y - durante un tiempo de 30 minutos a 24 horas.

    Thermal chemical vapor deposition split-functionalization process, product, and coating

    公开(公告)号:AU2016253571A1

    公开(公告)日:2017-05-25

    申请号:AU2016253571

    申请日:2016-11-02

    Applicant: SILCOTEK CORP

    Abstract: THERMAL CHEMICAL VAPOR DEPOSITION SPLIT FUNCTIONALIZATION PROCESS, PRODUCT, AND COATING Thermal chemical vapor deposition split-functionalizing processes, coatings, and products are disclosed. The thermal chemical vapor deposition split-functionalizing process includes positioning an article within an enclosed chamber, functionalizing the article within a first temperature range for a first period of time, and then further functionalizing the article within a second temperature range for a second period of time. The thermal chemical vapor deposition split-functionalized product includes a functionalization formed by functionalizing within a first temperature range for a first period of time and a further functionalization formed by further functionalizing within a second temperature range for a second period of time. -12-

    Fluoro-containing thermal chemical vapor deposition process and article

    公开(公告)号:AU2017276352A1

    公开(公告)日:2019-07-04

    申请号:AU2017276352

    申请日:2017-12-15

    Applicant: SILCOTEK CORP

    Inventor: SMITH DAVID A

    Abstract: Thermal chemical vapor deposition treatment is disclosed. Specifically, a thermal chemical vapor deposition treated article includes a substrate, and an oleophobic treatment to the substrate, the oleophobic treatment having oxygen, carbon, silicon, fluorine, and hydrogen. The oleophobic treatment has a treatment thickness of less than 600 nm and a heterogeneous wetting regime. The thermal chemical vapor deposition process includes positioning an article within a thermal chemical vapor deposition chamber, thermally reacting dimethylsilane to produce a layer, oxidizing the layer to produce an oxidized layer, and fluoro-functionalizing the oxidized layer to produce an oxidized then fluoro-functionalizing dimethylsilane chemical vapor deposition treatment. The oxidized then fluoro-functionalizing dimethylsilane chemical vapor deposition treatment has a treatment thickness of less than 600 nm and a heterogeneous wetting regime. -18- N In T-1 oli -4 (H .-1 r-0 C)1

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