公开(公告)号：US20150155323A1

公开(公告)日：2015-06-04

申请号：US14399735

申请日：2012-05-10

Applicant: SiliconFile Technologies Inc.

Inventor： Heui Gyun Ahn ,  Jun Ho Won

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14616 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: The present invention relates to a chip-stacked image sensor and to a method for manufacturing the same. More particularly, the present invention relates to a chip-stacked image sensor having a heterogeneous junction structure and to a method for manufacturing the same, in which a first semiconductor chip and a second semiconductor chip are manufactured using substrate materials suitable for the characteristics of sensors formed on each semiconductor substrate, and the semiconductor chips are stacked to form an image sensor. According to the chip-stacked image sensor having a heterogeneous junction structure and the method for manufacturing the same, the material for a first semiconductor substrate used in a first semiconductor chip and the material for a second semiconductor substrate used in a second semiconductor chip are different from each other, thus enabling characteristics of sensors formed on each semiconductor chip to be properly exhibited.

Abstract translation: 芯片堆叠式图像传感器及其制造方法技术领域本发明涉及芯片堆叠式图像传感器及其制造方法。 更具体地，本发明涉及具有异质结结构的芯片堆叠图像传感器及其制造方法，其中使用适合于传感器特性的基板材料制造第一半导体芯片和第二半导体芯片 形成在每个半导体衬底上，并且半导体芯片被堆叠以形成图像传感器。 根据具有异质结结构的芯片堆叠图像传感器及其制造方法，用于第一半导体芯片的第一半导体衬底的材料和用于第二半导体芯片中的第二半导体衬底的材料是不同的 从而能够适当地显示形成在各半导体芯片上的传感器的特性。

公开(公告)号：US09478464B2

公开(公告)日：2016-10-25

申请号：US14888674

申请日：2014-04-30

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Heui Gyun Ahn ,  Sang Wook Ahn ,  Yong Woon Lee ,  Huy Chan Jung ,  Do Young Lee

IPC: H01L21/768 ,  H01L21/306 ,  H01L21/683

CPC classification number: H01L21/76898 ,  H01L21/30604 ,  H01L21/6835 ,  H01L21/7684 ,  H01L2221/68327 ,  H01L2221/68359

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract translation: 用于制造通孔硅通孔（TSV）的方法采用传统的沟槽绝缘工艺来容易地制造通孔硅通孔（TSV），从而实现通孔硅通孔（TSV）和通孔硅通孔（TSV）之间的有效电绝缘 硅。

公开(公告)号：US09613881B2

公开(公告)日：2017-04-04

申请号：US14891629

申请日：2014-05-09

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Heui Gyun Ahn ,  Sang Wook Ahn ,  Yong Woon Lee ,  Huy Chan Jung ,  Sung Chun Jun

IPC: H01L27/00 ,  H01L23/367 ,  H01L25/065 ,  H01L23/522 ,  H01L23/58 ,  H01L27/06

CPC classification number: H01L23/367 ,  H01L23/3677 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/585 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device having improved heat-dissipation characteristics is capable effectively discharging heat that is generated inside the semiconductor device of a three-dimensional laminated structure, to the outside of the semiconductor device by utilizing an internal connector used during bonding.

公开(公告)号：US09543348B2

公开(公告)日：2017-01-10

申请号：US14912373

申请日：2014-08-12

Applicant: SILICONFILE TECHNOLOGIES INC.

Inventor： Kyoung-Sik Park ,  Heui Gyun Ahn ,  Min-Suk Ko ,  Gab-Hwan Cho

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469

Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract translation: 本发明涉及具有改进的芯片驱动性能的背光源图像传感器芯片，其中形成有导电焊盘的焊盘区域以外的区域和形成有滤光器的感测区域被用作 在具有限制区域的背光图像传感器芯片中，可以在没有附加处理的情况下进行辅助驱动的区域，从而可以执行辅助电源，辅助信号传输和辅助操作控制等附加功能，从而提高芯片驱动性能。