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    Anodization apparatus, anodization system including the same, and semiconductor wafer
    1.
    发明专利
    Anodization apparatus, anodization system including the same, and semiconductor wafer 有权
    阳离子装置，包括它们的阳离子系统和半导体滤波器

    公开(公告)号：JP2013112880A

    公开(公告)日：2013-06-10

    申请号：JP2011262421

    申请日：2011-11-30

    Applicant: Dainippon Screen Mfg Co Ltd ,  大日本スクリーン製造株式会社 ,  Solexel Inc ,  ソレクセル インコーポレーテッドSolexel, Inc.

    Inventor： HAYASHI NORIYUKI ,  MIYAJI YASUYOSHI ,  YONEHARA SEIICHI ,  INAHARA TAKAMITSU ,  YONEHARA TAKAO ,  MOSLEHI MEHRDAD ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY

    IPC: C25F7/00 ,  C25D11/32 ,  C25F3/12 ,  H01L21/306 ,  H01L21/3063

    CPC classification number: C25D17/001 ,  C25D11/005 ,  C25D11/32 ,  C25D17/06 ,  C25D17/08 ,  C25D17/10 ,  H01L21/02002 ,  H01L21/67173 ,  H01L21/6723 ,  H01L21/67754 ,  H01L21/68707 ,  H01L29/06

    Abstract: PROBLEM TO BE SOLVED: To provide an anodization apparatus suitable for automatization and a batch process, and having a mechanism by which a substrate is held, transferred, and made into a part of an anodization tank, and a semiconductor substrate having a porous layer formed.SOLUTION: A plurality of substrates W are moved to a processing position while held by a left holder part 67 and a right holder part 69, and connected to an upper holder part 71 and a lower holder part 39, and then the whole circumferential surfaces of the plurality of substrates W are liquid-tight with an electrolyte solution in a reservoir 11. In this state, anodization processing is performed, and then the substrates W are discharged from the reservoir 11. Thus, the left holder part 67 and the right holder part 69 are structured along with the upper holder part 71 and the lower holder part 39 so as to be able to hold the substrates W in a liquid-tight state. Therefore, the anodization apparatus 1 suitable for automatization and a batch process is achieved, by which the plurality of the substrates W are transferred, and porous layers are formed. Also, according to the apparatus, the semiconductor substrate including porous layers efficiently and uniformly formed on both surfaces, the front and rear surfaces, can be provided.

    Abstract translation: 要解决的问题：提供一种适用于自动化和分批处理的阳极氧化装置，并且具有将基板保持，转移并制成阳极氧化槽的一部分的机构，以及具有 形成多孔层。 解决方案：将多个基板W移动到处理位置，同时由左保持器部分67和右保持器部分69保持，并连接到上保持器部分71和下保持器部分39，然后整体 多个基板W的圆周表面在储存器11中用电解液液密。在该状态下，进行阳极氧化处理，然后基板W从储存器11排出。因此，左支架部分67和 右支架部分69与上保持器部分71和下保持器部分39一起构成，以便能够将基板W保持在液密状态。 因此，实现了适用于自动化和分批处理的阳极氧化装置1，通过该阳极氧化装置多个基板W被转印，形成多孔层。 此外，根据该装置，可以提供包括在前表面和后表面的两个表面上有效且均匀地形成的多孔层的半导体衬底。 版权所有（C）2013，JPO＆INPIT

    Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
    2.
    发明专利
    Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template 未知

    公开(公告)号：MY162405A

    公开(公告)日：2017-06-15

    申请号：MYPI2011700122

    申请日：2009-02-06

    Applicant: SOLEXEL INC

    Inventor： WANG DAVID XUAN QI ,  MOSLEHI MEHRDAD

    IPC: H01L21/02 ,  F16L21/035

    Abstract: A METHOD IS PROVIDED FOR FABRICATING A THIN-FILM SEMICONDUCTOR SUBSTRATE (54) BY FORMING A POROUS SEMICONDUCTOR LAYER (52) CONFORMALLY ON A REUSABLE SEMICONDUCTOR TEMPLATE (50) AND THEN FORMING A THIN-FILM SEMICONDUCTOR SUBSTRATE (54) CONFORMALLY ON THE POROUS SEMICONDUCTOR LAYER (52). AN INNER TRENCH (62) HAVING A DEPTH LESS THAN THE THICKNESS OF THE THIN-FILM SEMICONDUCTOR SUBSTRATE (54) IS FORMED ON THE THIN-FILM SEMICONDUCTOR SUBSTRATE (54). AN OUTER TRENCH (68) PROVIDING ACCESS TO THE POROUS SEMICONDUCTOR LAYER (52) IS FORMED ON THE THIN-FILM SEMICONDUCTOR SUBSTRATE (54) AND IS POSITIONED BETWEEN THE INNER TRENCH (62) AND THE EDGE OF THE THIN-FILM SEMICONDUCTOR SUBSTRATE (54). THE THIN-FILM SEMICONDUCTOR SUBSTRATE IS THEN RELEASED FROM THE REUSABLE SEMICONDUCTOR TEMPLATE (50).

    METHODS FOR MANUFACTURING THREE-DIMENSIONAL THIN-FILM SOLAR CELLS
    3.
    发明申请
    METHODS FOR MANUFACTURING THREE-DIMENSIONAL THIN-FILM SOLAR CELLS 审中-公开
    制造三维薄膜太阳能电池的方法

    公开(公告)号：WO2008070266A2

    公开(公告)日：2008-06-12

    申请号：PCT/US2007080655

    申请日：2007-10-07

    Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD

    Inventor： MOSLEHI MEHRDAD

    IPC: H01L29/06 ,  H01L21/302

    CPC classification number: H01L31/00 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03529 ,  H01L31/056 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Methods for manufacturing three-dimensional thin- film solar cells 100, using a template. The template comprises a template substrate comprising a plurality of posts and a plurality of trenches between said plurality of posts. The three-dimensional thin-film solar cell substrate is formed by forming a sacrificial layer on the template, subsequently depositing a semiconductor layer, selectively etching the sacrificial layer, and releasing the semiconductor layer from the template. The resulting three-dimensional thin-film solar cell substrate may comprise a plurality of single-aperture unit cells or dual-aperture unit cells. Select portions of the three-dimensional thin-film solar cell substrate are then doped with a first dopant, while other select portions are doped with a second dopant. Next, emitter 525 and base metallization regions 532 are formed.

    Abstract translation: 使用模板制造三维薄膜太阳能电池100的方法。 模板包括模板衬底，其包括多个柱和在所述多个柱之间的多个沟槽。 通过在模板上形成牺牲层，然后沉积半导体层，选择性地蚀刻牺牲层，以及从模板中释放半导体层，形成三维薄膜太阳能电池基板。 所得到的三维薄膜太阳能电池基板可以包括多个单孔单元电池或双孔单元电池。 然后，三维薄膜太阳能电池基板的选择部分掺杂有第一掺杂剂，而其它选择部分掺杂有第二掺杂剂。 接下来，形成发射极525和基底金属化区域532。

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