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    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT
    1.
    发明专利
    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 未知

    公开(公告)号：MY165969A

    公开(公告)日：2018-05-18

    申请号：MYPI2011005354

    申请日：2010-05-05

    Applicant: SOLEXEL INC

    Inventor： KAMIAN GEORGE ,  NAG SOMNATH ,  TAMILMANI SUBBU ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  YONEHARA TAKAO

    IPC: C30B1/10 ,  C25D11/32

    Abstract: THIS DISCLOSURE ENABLES HIGH-PRODUCTIVITY FABRICATION OF SEMICONDUCTOR-BASED SEPARATION LAYERS (MADE OF SINGLE LAYER OR MULTI-LAYER POROUS SEMICONDUCTORS SUCH AS POROUS SILICON, COMPRISING SINGLE POROSITY OR MULTI-POROSITY LAYERS), OPTICAL REFLECTORS (MADE OF MULTI-LAYER/MULTI-POROSITY POROUS SEMICONDUCTORS SUCH AS POROUS SILICON), FORMATION OF POROUS SEMICONDUCTOR (SUCH AS POROUS SILICON) FOR ANTI-REFLECTION COATINGS, PASSIVATION LAYERS, AND MULTI-JUNCTION, MULTI-BAND-GAP SOLAR CELLS (FOR INSTANCE, BY FORMING A VARIABLE BAND GAP POROUS SILICON EMITTER ON A CRYSTALLINE SILICON THIN FILM OR WAFER-BASED SOLAR CELL). OTHER APPLICATIONS INCLUDE FABRICATION OF MEMS SEPARATION AND SACRIFICIAL LAYERS FOR DIE DETACHMENT AND MEMS DEVICE FABRICATION, MEMBRANE FORMATION AND SHALLOW TRENCH ISOLATION (STI) POROUS SILICON (USING POROUS SILICON FORMATION WITH AN OPTIMAL POROSITY AND ITS SUBSEQUENT OXIDATION). FURTHER THE DISCLOSURE IS APPLICABLE TO THE GENERAL FIELDS OF PHOTOVOLTAICS, MEMS, INCLUDING SENSORS AND ACTUATORS, STAND-ALONE, OR INTEGRATED WITH INTEGRATED SEMICONDUCTOR MICROELECTRONICS, SEMICONDUCTOR MICROELECTRONICS CHIPS AND OPTOELECTRONICS.

    METHODS FOR LIQUID TRANSFER COATING OF THREE-DIMENSIONAL SUBSTRATES
    4.
    发明申请
    METHODS FOR LIQUID TRANSFER COATING OF THREE-DIMENSIONAL SUBSTRATES 审中-公开
    三维基底液体转移涂层的方法

    公开(公告)号：WO2009026240A1

    公开(公告)日：2009-02-26

    申请号：PCT/US2008073499

    申请日：2008-08-18

    Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

    Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

    IPC: B05D1/36 ,  B05D5/00 ,  H01L21/00

    CPC classification number: B01D1/22 ,  H01L21/02617 ,  H01L21/6715 ,  H01L22/12 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/202 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/1258 ,  H05K3/207 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2203/0126 ,  H05K2203/0528 ,  H05K2203/308 ,  Y02E10/50 ,  Y02P70/521

    Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.

    Abstract translation: 本文公开的方法提供了选择性涂覆3-D衬底的顶表面或脊，同时避免液体涂层材料芯吸到3-D衬底上的微空腔中。 衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。 该模板包括一个模板衬底，在柱子之间有柱子和沟槽。 该步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。 然后，这些步骤包括从模板释放半导体层并且使用液体转移涂覆步骤涂覆3D基板，以将液体涂覆材料涂覆到3D基板的表面。 该方法可以进一步包括通过选择性地涂覆衬底的顶脊或表面来涂覆3D衬底。 另外的特征可以包括用填充材料填充基板的微腔，除去填充材料以仅暴露待涂覆的基板表面，用液体涂层材料涂覆基板，并且从微腔除去所述填充材料 的底物。

    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT
    6.
    发明公开
    HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
    高生产厂生产多孔SEMICONDUCTORS

    公开(公告)号：EP2427914A4

    公开(公告)日：2013-06-05

    申请号：EP10772799

    申请日：2010-05-05

    Applicant: SOLEXEL INC

    Inventor： KAMIAN GEORGE ,  NAG SOMNATH ,  TAMILMANI SUBBU ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  YONEHARA TAKAO

    IPC: H01L31/00 ,  C25D11/00 ,  C25D11/32 ,  C25D17/00 ,  C25D17/06 ,  H01L31/09 ,  H01L31/18

    CPC classification number: C25D11/32 ,  C25D11/005 ,  C25D17/001 ,  C25D17/06 ,  C25F3/12 ,  C25F7/00 ,  H01L31/1892 ,  Y02E10/50

    Abstract: This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

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