公开(公告)号：DE60311095T2

公开(公告)日：2007-08-16

申请号：DE60311095

申请日：2003-06-06

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

公开(公告)号：EP1513234A4

公开(公告)日：2005-10-19

申请号：EP03736075

申请日：2003-06-06

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  YABUKI Y ,  ANSAI S ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO O ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

Abstract: A multibeam semiconductor laser wherein a group III-V nitride compound semiconductor layer having a laser structure is formed on a major surface of a sapphire substrate or the like, and anodes and cathodes are formed on the group III-V nitride compound semiconductor layer. An anode is formed across a cathode, with an insulating film between them. Another anode is formed across another cathode, with an insulating film between them.

Abstract translation: 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：DE60311095D1

公开(公告)日：2007-02-22

申请号：DE60311095

申请日：2003-06-06

Applicant: SONY CORP

Inventor： TOJO TSUYOSHI ,  YABUKI YOSHIFUMI ,  ANSAI SHINICHI ,  HINO TOMONORI ,  GOTO OSAMU ,  FUJIMOTO TSUYOSHI ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OOFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

Abstract: In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

公开(公告)号：JPH07244872A

公开(公告)日：1995-09-19

申请号：JP3693594

申请日：1994-03-08

Applicant: SONY CORP

Inventor： NOMURA HIROSHI ,  FUJIMOTO TSUYOSHI ,  TAKEMOTO HIROYUKI ,  YONE KIYOE ,  TADA KYOKO

IPC: G11B7/26 ,  G11B7/24

Abstract: PURPOSE:To obtain a glass substrate for an original plate for optical disc, which can realize a high-quality optical disc with a high C/N and can restrict manufacturing costs. CONSTITUTION:A coating film mainly composed of SiO2 or a reinforcing layer 1a according to a chemical reinforcing method is formed on a surface of a glass substrate containing a large amount of alkalis, e.g. a blue plate glass (soda-lime glass), which is used as a glass substrate 1 for forming an optical disc original plate. The film mainly composed of SiO2 is obtained by applying and baking an application liquid for formation of an SiO2 series film. The film functions as a preventing film to prevent tone dissolution of alkali metals and has 0.1-17mum thickness. The reinforcing layer is a layer obtained, for example, by substituting sodium ions by potassium ions of a large ionic radius through a low-temperature ion exchange. The reinforcing layer controls the movement of alkali ions in the glass substrate.

公开(公告)号：JPH06302016A

公开(公告)日：1994-10-28

申请号：JP9338993

申请日：1993-04-20

Applicant: SONY CORP

Inventor： FUJIMOTO TSUYOSHI

IPC: G11B7/26

Abstract: PURPOSE:To improve productivity by subjecting a master substrate to irradiation with UV rays then to a baking treatment. CONSTITUTION:A resist is applied on the main surface of the disk glass substrate and is developed after prebaking for 60 minutes at 60 deg.C and laser cutting. The glass substrate 2 is placed on a stage 1 movable in arrow X direction and the resist is irradiated with UV rays from a UV ray source 3 which faces the substrate and is parted therefrom at a prescribed distance for 30 seconds in N2. Then, the resist is baked for 3 hours at 200 deg.C, thereby increasing the adhesive force between the glass and the resist. The adhesive force of the glass and the resist is increased in such a manner and, therefore, the sticking of the resist is averted at the time of peeling a stamper from the master substrate is averted. The master substrate is reusable many times. Then, plural stampers having the same characteristics are produced from one sheet of the master substrate. The assurance of the quality is also smoothly managed. Since the stages from precision washing to developing are omitted in the production process of the stamper, the productivity is greatly improved.