公开(公告)号：DE69729158T2

公开(公告)日：2005-05-04

申请号：DE69729158

申请日：1997-10-28

Applicant: SONY CORP

Inventor： WESTWATER JONATHAN ,  GOSAIN DHARAM PAL ,  NAKAGOE MIYAKO ,  USUI SETSUO

IPC: C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/04 ,  H01L21/20 ,  H01L33/06 ,  H01L33/00

Abstract: While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450 DEG -650 DEG C in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.

公开(公告)号：DE69729158D1

公开(公告)日：2004-06-24

申请号：DE69729158

申请日：1997-10-28

Applicant: SONY CORP

Inventor： WESTWATER JONATHAN ,  GOSAIN DHARAM PAL ,  NAKAGOE MIYAKO ,  USUI SETSUO

IPC: C30B11/00 ,  C30B11/12 ,  C30B25/00 ,  C30B25/04 ,  H01L21/20 ,  H01L33/06 ,  H01L33/00

Abstract: While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450 DEG -650 DEG C in a silane gas atmosphere of less than 0.5 Torr. As a result, a silane gas decomposition reaction occurs with the melted alloy droplets serving as catalysts, whereby silicon wires grow on the substrate surface. Subsequently, the metal alloy droplets at the tips of the silicon wires are removed and surface portions of the silicon wires are oxidized. Resulting surface oxide films are thereafter removed. As a result, silicon quantum wires that are thinner by the thickness of the surface oxide films are obtained.

公开(公告)号：SG52171A1

公开(公告)日：1998-09-28

申请号：SG1995001436

申请日：1995-09-27

Applicant: SONY CORP

Inventor： GOSAIN DHARAM PAL ,  JIYONASAN UESUTOOOTAA ,  USUI SETSUO

IPC: C23C14/54 ,  C23C16/452 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/42 ,  C23C16/44

Abstract: A plasma-processing method used in processes for manufacturing semiconductor devices. During plasma processing, ultraviolet radiation is emitted from a region where a plasma is created. An ultraviolet radiation-blocking means blocks the ultraviolet radiation from impinging on the sample surface to protect it. The blocking means passes particles forming a plasma onto the sample surface. The particles passed through the ultraviolet radiation-blocking plates are implanted into the sample. Alternatively, the processed surface of the sample is etched, or a film is deposited on the processed surface of the sample.

公开(公告)号：EP1582501A4

公开(公告)日：2009-01-28

申请号：EP04700779

申请日：2004-01-08

Applicant: SONY CORP

Inventor： GOSAIN DHARAM PAL ,  KAJIURA HISASHI ,  MARUYAMA RYUICHIRO ,  SHIRAISHI MASASHI ,  HUANG HOUJIN ,  KADONO KOJI ,  WACHI SHIGEAKI ,  ATA MASAFUMI

IPC: C01B31/02 ,  H01J1/304 ,  H01J9/02 ,  B82B3/00 ,  H01J29/04 ,  H01J31/12

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: A production method for a tubular carbon molecule capable of arraying carbon nanotubes at finer intervals and regularly. A catalyst is disposed on a material substrate (10) consisting of a semiconductor such as silicon (Si) and containing iron (Fe) as a catalyst by utilizing melting according to modulated heat distribution (11). The heat distribution (11) is formed by diffracting energy beams (12), for example, by a diffraction lattice (13). A method of disposing a catalyst may include, for example, depositing iron in a planar or protruding form in a position matching the heat distribution (11), or further transferring it, by using it as an original, onto another substrate. Carbon nanotubes are grown using the disposed catalyst. The grown nanotubes can be used for a recording device, a field electron emission element or an FED.

公开(公告)号：EP0971416A4

公开(公告)日：2000-08-09

申请号：EP99901180

申请日：1999-01-26

Applicant: SONY CORP

Inventor： GOSAIN DHARAM PAL ,  NOMOTO KAZUMASA ,  WESTWATER JONATHAN ,  NAKAGOE MIYAKO ,  USUI SETSUO ,  NOGUCHI TAKASHI ,  MORI YOSHIFUMI

IPC: H01L21/8247 ,  B82B1/00 ,  H01L21/28 ,  H01L21/822 ,  H01L21/84 ,  H01L27/10 ,  H01L27/115 ,  H01L27/12 ,  H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC classification number: B82Y10/00 ,  H01L21/28273 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/7883 ,  H01L29/792

Abstract: An accumulation region (15) comprises many dispersed dots (15a) whose surface density is higher than that of structural pin-holes produced in a tunnel insulating film (14a). Alternatively, the number of dots (15a) in the accumulation region (15) is determined to be five or more. Alternatively, a conduction region (13c) is formed in a polysilicon layer (13) whose surface roughness is greater than 0.1 nm and less than 100 nm. The number of dots (15a) in the accumulation region (15) is larger than the number of grains in the conduction region (13c). Even if defects, such as pin-holes, occur in the tunnel insulating film (14a) and charges accumulated in some dots leak, the charges accumulated in the dots in the regions where no defect is present do not leak. Therefore, information can be held for a long time.

Abstract translation: 虽然存储区15由许多分散微粒（点）（15A）的，颗粒（15A）的表面密度被设置为比在隧道产生的构造性的孔（针孔）的更高的绝缘膜 - （14a）的 ，或在存储区域（15）的微粒（15A）的数量设定为5个以上。 虽然传导区（13C）由具有0.1纳米的表面粗糙度〜100nm的多晶硅层（13）形成的，在所述存储区域中的颗粒（15A）根据（15）的数量被设定为比数大 在传导区（13c）中的晶粒。 即使当缺陷：例如销孔中的隧道绝缘膜 - （14a）的发生，并存储在所述颗粒的部分电荷被泄露，存储在其中不存在缺陷的发生不被泄漏的区域中形成的微粒的电荷。 因此，信息可以保持很长一段时间。

公开(公告)号：JP2002176003A

公开(公告)日：2002-06-21

申请号：JP2000373052

申请日：2000-12-07

Applicant: SONY CORP

Inventor： MACHIDA AKIO ,  USUI SETSUO ,  GOSAIN DHARAM PAL

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/223 ,  H01L21/225 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To form a low concentration impurity diffused region with proper controllability even by using a low heat resistant substrate. SOLUTION: A method for doping a semiconductor layer comprises the steps of forming the semiconductor layer on the substrate when the layer is doped, then controlling an amount of dopant ions to be adsorbed to the surface of the semiconductor layer by a means for introducing a hydrogen gas at a plasma emitting time, and activating the dopant ion adsorbed by an excimer laser or the like in the semiconductor layer.

公开(公告)号：JP2002270843A

公开(公告)日：2002-09-20

申请号：JP2001062613

申请日：2001-03-06

Applicant: SONY CORP

Inventor： GOSAIN DHARAM PAL ,  MACHIDA AKIO ,  USUI SETSUO ,  SATO JUNICHI

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To protect an organic polymer substrate from damages even if a semiconductor laser is irradiated with a laser beam, in order to activate impurity-doped into a semiconductor layer. SOLUTION: An impurity is doped into the semiconductor layer 3 formed on the organic polymer substrate 1, and the impurity of the semiconductor layer 3 is activated by irradiating the semiconductor layer 2 with an energy beam, such as from Ar ion laser or copper vapor laser, of which energy absorption at the organic polymer substrate 1 is low such as not to give damages to such an organic polymer substrate 1.

公开(公告)号：JP2002184710A

公开(公告)日：2002-06-28

申请号：JP2000384122

申请日：2000-12-18

Applicant: SONY CORP

Inventor： MACHIDA AKIO ,  USUI SETSUO ,  GOSAIN DHARAM PAL

IPC: H01L21/22 ,  H01L21/223 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To form low-concentration impurity-diffused areas highly controllably even when a substrate having a low heat resistance is used. SOLUTION: At the doping of a semiconductor layer 21, masks, such as side wall sections 24, etc., which transmit an energy beam EBL are partially formed on the surface of the layer 21 and, after dopant ions 25 are made to be adsorbed to the partial surface of the layer 21 except the formed areas of the masks, the ions 25 are introduced into the layer 21 by irradiating the layer 21 with the energy beam EBL in a state where the masks are kept as they are. In the lower parts of the masks, such as the side wall sections 24, etc., lateral diffusion occurs and the low-concentration impurity-diffused areas can be formed with high controllability and reproducibility.