公开(公告)号：DE60322097D1

公开(公告)日：2008-08-21

申请号：DE60322097

申请日：2003-11-25

Applicant: SONY CORP

Inventor： TADA MASAHIRO ,  KINOSHITA TAKASHI ,  MITARAI SHUN ,  ITO YASUYUKI

IPC: B81B3/00 ,  B81C1/00 ,  H03H3/007 ,  H03H9/24

Abstract: Disclosed is a micromachine as a high-frequency filter which includes a high Q value and is suitable for higher frequency bands. The micromachine (1) includes an output electrode (7) formed on a substrate (5), an interlayer insulating film (9) which covers the substrate (5) and includes an opening (9a) whose bottom is the output electrode (7), and a beltlike resonator electrode (11) so formed on the interlayer insulating film (9) as to traverse above the space (A) in the opening (9a), with the resonator electrode (11) being concave toward the opening (9a) along the side wall of the opening (9a).

公开(公告)号：EP1568655A4

公开(公告)日：2006-12-06

申请号：EP03774185

申请日：2003-11-25

Applicant: SONY CORP

Inventor： TADA MASAHIRO ,  KINOSHITA TAKASHI ,  MITARAI SHUN ,  ITO YASUYUKI

IPC: B81B3/00 ,  B81C1/00 ,  H03H3/007 ,  H03H9/24

CPC classification number: H03H3/0072 ,  H03H9/2405 ,  H03H2009/02511

Abstract: A micromachine for a high frequency filter having a high Q factor and a frequency band which is high. A micromachine (1) comprising an output electrode (7) disposed on a board(5), an interlayer insulation film (9) covering the board (5) and having a hole pattern (9a) with an output electrode (7) used as a bottom, and a band-like vibrator electrode (11) disposed on the interlayer insulation film (9) in such a manner that, with the interior of the hole pattern (9a) used as a space (A), it crosses the upper region thereof, the micromachine being characterized in that the vibrator electrode (11) is formed as a recess on the hole pattern (9a) side along the side wall of hole pattern (9a).

公开(公告)号：JP2006108502A

公开(公告)日：2006-04-20

申请号：JP2004295180

申请日：2004-10-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TADA MASAHIRO ,  ITO YASUYUKI ,  TANAKA NAOHIRO ,  MITARAI TAKASHI

IPC: H01G7/02

Abstract: PROBLEM TO BE SOLVED: To provide a micro capacitor capable of changing capacity by simple constitution, and securing and stabilizing the capacity. SOLUTION: The micro capacitor is provided with capacitors 11, 12 constituting a plurality of capacitors C, a dielectric film, a driving electrode 14, and a single power supply and constituted so that the lengths L1 of the displacing positions of respective electrode 11P in the capacity 11 is coincident with each other, and the lengths L2 of respective driving electrodes 14A in the driving electrode 14 are mutually different. When voltage to be applied from the single power supply to the driving electrode 14 is gradually changed in each of the driving electrodes 14A, the micro capacitor is successively switched based on differences of pull-In voltages among respective capacitors, thus changing the capacity. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够通过简单的结构改变容量并且确保和稳定容量的微型电容器。 ＆lt; P＆gt;解决方案：微电容器设置有构成多个电容器C的电容器11,12，电介质膜，驱动电极14和单个电源，并且构成为使各电极的位移位置的长度L1 11P的电容11彼此一致，并且驱动电极14中的各个驱动电极14A的长度L2相互不同。 当在每个驱动电极14A中逐渐改变从单个电源施加到驱动电极14的电压时，基于各个电容器之间的拉入电压的差别，依次切换微电容器，从而改变容量。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006068843A

公开(公告)日：2006-03-16

申请号：JP2004253588

申请日：2004-08-31

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SARUTA NORIHIKO ,  ITO YASUYUKI ,  KINOSHITA TAKASHI

IPC: B81B3/00 ,  G02B26/08

Abstract: PROBLEM TO BE SOLVED: To optimize the beam inclination amount while restraining the bending of a beam even if the beam is made micro-sized in a micro electromechanical element requiring an inclination in the surface shape of the beam.
SOLUTION: A lower electrode 43 is provided with a beam 45 opposite thereto through a space 44 and supported at the end parts, and the beam 45 is provided with a step 51 for causing inclination in the width direction of the beam. The step 51 is provided with a means 52 for relaxing the stress of a triple point.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了优化光束倾斜量，同时抑制光束的弯曲，即使光束被制成微尺寸在需要在光束的表面形状中倾斜的微机电元件中。 解决方案：下电极43通过空间44设置有与其相对的梁45并且在端部处被支撑，并且梁45设置有用于在梁的宽度方向上产生倾斜的台阶51。 步骤51设置有用于放松三重点的应力的装置52。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006043847A

公开(公告)日：2006-02-16

申请号：JP2004231210

申请日：2004-08-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SARUTA NORIHIKO ,  ITO YASUYUKI ,  KINOSHITA TAKASHI

IPC: B81B3/00 ,  B81C1/00

Abstract: PROBLEM TO BE SOLVED: To provide a micro-structure, easily forming a sealed structure using a semiconductor process, and a micro electro mechanical system. SOLUTION: An enveloping wall part 48 is formed to enclose a micro electro mechanical system body 46 on a substrate 42, and an upper film 49 lowered due to film characteristic is made to closely adhere to the top face of the enveloping wall part 48, thereby sealing the micro electro mechanical system body 46. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种使用半导体工艺容易地形成密封结构的微结构和微机电系统。 解决方案：包围壁部分48形成为将微电子机械系统主体46包围在基板42上，并且由于膜特性而降低的上膜49被紧密地附着在包封壁部分的顶面上 48，从而密封微机电系统体46.版权所有：（C）2006，JPO＆NCIPI

公开(公告)号：JP2005197415A

公开(公告)日：2005-07-21

申请号：JP2004001322

申请日：2004-01-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAKESHITA MITSUAKI ,  ITO YASUYUKI

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device in which a leak cut-off switch reduced in on-resistance is obtained in a small size, and to provide a leak control circuit.
SOLUTION: In the semiconductor device, a switching means 3 is installed with a driving power source of a circuit block 2 or the ground and an unnecessary leak current is interrupted by bringing the switching means 3 into an off-state in a standby state. In the semiconductor device or the leak control circuit, the switching means 3 is operated by contact and non-contact switching by the mechanical operation of a movable part 8 formed of a conductive electrode existing on the same chip as the circuit block 2.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体器件，其中以小尺寸获得泄漏截止开关降低导通电阻并提供泄漏控制电路。 解决方案：在半导体器件中，开关装置3安装有电路块2的驱动电源或接地，并且通过使切换装置3处于关闭状态而被中断不必要的泄漏电流 州。 在半导体装置或泄漏控制电路中，切换装置3通过由存在于与电路块2相同的芯片上的导电电极形成的可动部分8的机械操作而进行接触和非接触切换来操作。

版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002324895A

公开(公告)日：2002-11-08

申请号：JP2001129469

申请日：2001-04-26

Applicant: SONY CORP

Inventor： ITO YASUYUKI

IPC: H01L27/105 ,  H01L21/8246

Abstract: PROBLEM TO BE SOLVED: To provide a superior ferroelectric memory element without characteristic variations. SOLUTION: A crystalline insulating film 11 formed with crystalline metal oxide insulates electrically a lower electrode 10a from a lower electrode 10b formed on other memory cell and forms a flat surface along with the lower electrode 10a and the other lower electrode 10b, and a ferroelectric thin film 12 is formed on this flat surface. Because the crystalline insulating film 11 consists of the crystalline metal oxide, the difference between coefficients of thermal expansion of the crystalline insulating film 11 and the ferroelectric thin film 12 is small, and further because the ferroelectric thin film 12 is formed on the flat surface, the ferroelectric thin film 12 can be formed in a state that the crystalline property and the morphology are uniform. As a result, a ferroelectric memory element 1 of a cross point type, which has the superior ferroelectric capacitor without characteristic variations, can be obtained.

公开(公告)号：JP2000307071A

公开(公告)日：2000-11-02

申请号：JP11568899

申请日：1999-04-23

Applicant: SONY CORP

Inventor： ASANO KATSUAKI ,  ITO YASUYUKI ,  MITARAI TAKASHI ,  OCHIAI AKIHIKO

IPC: H01L21/8247 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To prevent a contact failure and a degradation in transistor characteristics from occurring in a semiconductor memory device, by a method wherein a diffusion barrier layer, which is thermally stable, electrically conductive, and high in barrier properties to oxygen, the component elements of plug material, and lower electrode of precious metal, is provided between the plug and the lower electrode. SOLUTION: A semiconductor memory device 10 is equipped with a dielectric capacitor 31 composed of a first electrode (lower electrode) 32, a dielectric film 33, and a second electrode (upper electrode) 34; and a conductive plug 15 connected to the lower electrode 32. The lower electrode 32 connected to the conductive plug 15 is equipped with a conductive metal lower oxide layer 51, and a diffusion barrier layer 52 which stops diffusion of oxygen. The oxide layer 51 and the diffusion barrier layer 52 are laminated on the conductive plug 51 in this sequence.

公开(公告)号：JP2012059832A

公开(公告)日：2012-03-22

申请号：JP2010200067

申请日：2010-09-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SUZUKI YUMI ,  NAGAO MASAYUKI ,  ITO YASUYUKI

IPC: H01L23/00 ,  H01L23/02 ,  H01L23/12 ,  H01L27/14 ,  H04N5/225 ,  H04N5/335

CPC classification number: H01L27/14618 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor package which maintains good electromagnetic compatibility with a printed substrate by conducting easy and inexpensive processes, and to provide a method for manufacturing the semiconductor package and an optical module.SOLUTION: A camera module 1 is formed by mounting a lens unit 20 on a wafer level package 10, and the wafer level package 10 has a light receiving element 15 and electrode pads 13, which are sealed with a glass substrate 11, on a front surface of a support substrate 14. Solder balls 17 are formed on a rear surface side of the support substrate 14. The solder balls 17 are electrically connected with the electrode pads 13 by through vias 14a, which are provided so as to penetrate through the support substrate 14, and a re-wiring layer 16. An entire side surface of the camera module 1 is painted by an electromagnetic light exclusion shield film 30b, and thereby suppressing the occurrence of electromagnetic interference with a printed substrate on which the camera module is mounted.

Abstract translation: 要解决的问题：提供一种半导体封装，其通过简单且便宜的工艺来与印刷基板保持良好的电磁兼容性，并提供一种半导体封装和光学模块的制造方法。 解决方案：相机模块1通过将透镜单元20安装在晶片级封装10上而形成，并且晶片级封装10具有用玻璃基板11密封的光接收元件15和电极焊盘13， 在支撑基板14的前表面上形成焊球17.焊球17形成在支撑基板14的后表面侧上。焊球17通过通孔14a与电极焊盘13电连接，通孔14a设置为穿透 通过支撑基板14和重新布线层16.照相机模块1的整个侧表面被电磁遮光膜30b喷涂，从而抑制与其上相机的印刷基板的电磁干扰的发生 模块已安装。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2006108378A

公开(公告)日：2006-04-20

申请号：JP2004292872

申请日：2004-10-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ITO YASUYUKI

IPC: H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a resonance transistor or more materially a beam type resonance bulk transistor and a beam type resonance thin film transistor which permit high frequency, high SN ratio, and high power by employing a micro resonator. SOLUTION: The resonance transistor 1 is provided with a drain region 4, a source region 2, a channel region 3, and a gate oscillator 5 provided on the channel region 3 so as to be opposed through a space 16. A drain current, made to flow through the drain region 4, is changed in an AC waveform by the resonance of the gate oscillator 5. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：通过采用微型谐振器，提供一种谐振晶体管或更大体积的束型谐振体晶体管和束型谐振薄膜晶体管，其允许高频，高SN比和高功率。 解决方案：谐振晶体管1设置有设置在沟道区域3上的漏极区域4，源极区域2，沟道区域3和栅极振荡器5，以便通过空间16相对。漏极 流过漏极区域4的电流通过栅极振荡器5的谐振以交流波形改变。（C）2006，JPO和NCIPI