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    DISPLAY APPARATUS, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    1.
    发明公开
    DISPLAY APPARATUS, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 审中-公开
    显示装置，其制造方法和电子装置

    公开(公告)号：KR20070093891A

    公开(公告)日：2007-09-19

    申请号：KR20070024916

    申请日：2007-03-14

    Applicant: SONY CORP

    Inventor： INO MASUMITSU

    IPC: G02F1/1345 ,  G02F1/1339

    CPC classification number: G02F1/13454 ,  G02F1/133308 ,  G02F1/133528 ,  G02F1/13363 ,  G02F1/1339 ,  G02F1/13452 ,  G02F1/1368 ,  G02F2201/50 ,  H01J9/20

    Abstract: A display apparatus, a method for manufacturing the same, and an electronic apparatus are provided to promote more thinning of a display panel and finally determine its thickness by the device structure of display area. A display apparatus comprises the followings: a first substrate(11) where a pixel switch and a driving system are formed; a second substrate(12) which is arranged oppositely to the first substrate; a substance layer which is maintained between the first substrate and the second substrate and has electro-optical effects that the circumference of the substance layer is sealed by a sealing material(15); a control system which is formed to control the driving system on the first substrate; and a semiconductor chip in which a COG(Chip On Glass) chip(17) is built. The semiconductor chip is formed so that its thickness can be the same as the sum thickness of the sealing material and the second substrate or thicker than that of the sealing material and thinner than the sum thickness.

    Abstract translation: 提供显示装置，其制造方法和电子装置，以促进显示面板的更薄化，并通过显示区域的装置结构最终确定其厚度。 显示装置包括：形成像素开关和驱动系统的第一基板（11）; 与第一基板相对布置的第二基板（12）; 保持在第一基板和第二基板之间并具有通过密封材料（15）密封物质层的周边的电光效应的物质层。 形成为控制第一基板上的驱动系统的控制系统; 以及其中构建了COG（芯片上玻璃）芯片（17）的半导体芯片。 半导体芯片的厚度可以与密封材料和第二基板的厚度相同或者比密封材料的厚度更厚，并且厚度比和厚度厚。

    2.
    发明专利
    未知

    公开(公告)号：NO20020608D0

    公开(公告)日：2002-02-07

    申请号：NO20020608

    申请日：2002-02-07

    Applicant: SONY CORP

    Inventor： INO MASUMITSU

    IPC: G02F1/1345 ,  G02F1/13 ,  G02F1/1362 ,  G09F9/00 ,  G09F9/30 ,  H01L27/32 ,  G09F

    Abstract: Liquid crystal display has first substrate on which are provided a matrix (12) of pixels (11) and drive systems (13, 14) for driving the matrix of pixels with pixel signals. Second substrate is opposed to first substrate and liquid crystal layer is held between substrates. Drive systems (13, 14) are controlled by control systems (23, 24, 25), implemented in semiconductor chip on first substrate by chip on glass (COG).

    3.
    发明专利
    未知

    公开(公告)号：NO326236B1

    公开(公告)日：2008-10-20

    申请号：NO20020608

    申请日：2002-02-07

    Applicant: SONY CORP

    Inventor： INO MASUMITSU

    IPC: G02F1/1345 ,  G09F9/00 ,  G02F1/13 ,  G02F1/1362 ,  G09F9/30 ,  H01L27/32

    Abstract: Liquid crystal display has first substrate on which are provided a matrix (12) of pixels (11) and drive systems (13, 14) for driving the matrix of pixels with pixel signals. Second substrate is opposed to first substrate and liquid crystal layer is held between substrates. Drive systems (13, 14) are controlled by control systems (23, 24, 25), implemented in semiconductor chip on first substrate by chip on glass (COG).

    7.
    发明专利
    未知

    公开(公告)号：DE69520538T2

    公开(公告)日：2001-10-04

    申请号：DE69520538

    申请日：1995-10-17

    Applicant: SONY CORP

    Inventor： MINEGISHI MASAHIRO ,  INO MASUMITSU ,  KUNII MASAFUMI ,  URAZONO TAKENOBU ,  HAYASHI HISAO

    IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

    Abstract: Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650 DEG C, for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.

    8.
    发明专利
    未知

    公开(公告)号：DE69520538D1

    公开(公告)日：2001-05-10

    申请号：DE69520538

    申请日：1995-10-17

    Applicant: SONY CORP

    Inventor： MINEGISHI MASAHIRO ,  INO MASUMITSU ,  KUNII MASAFUMI ,  URAZONO TAKENOBU ,  HAYASHI HISAO

    IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

    Abstract: Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650 DEG C, for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.

    9.
    发明专利
    未知

    公开(公告)号：DE69215461T2

    公开(公告)日：1997-04-10

    申请号：DE69215461

    申请日：1992-09-03

    Applicant: SONY CORP

    Inventor： INO MASUMITSU

    IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/136

    Abstract: A liquid crystal display device includes a pair of opposed insulating substrates (50a, 50b) and a liquid crystal layer (51) sandwiched therebetween. One of the insulating substrates (50a) is formed with a first trench (105) for forming a thin film transistor (103) therein and a second trench (112) for forming a capacitor element (104) therein. The thin film transistor is constituted of a semiconductor layer (106) formed along an inner surface of the first trench, a gate insulating layer (107) formed on the semiconductor layer, and a gate electrode (108) formed on the gate insulating layer. The capacitor element (104) is constituted of a first electrode (113) formed along an inner surface of the second trench, a dielectric layer (114) formed on the first electrode, and a second electrode (115) formed on the dielectric layer. The first electrode (113) is formed integrally with the semiconductor layer (107), thereby increasing the aperture ratio. The first trench (105) has a tapering side surface, thereby assisting uniform ion implantation for the semiconductor layer (107). In the case that the substrate has a laminated structure of an insulating substrate (308) and an insulating layer (309), the etching rate of the substrate as a whole can be improved.

    10.
    发明专利
    未知

    公开(公告)号：DE69215461D1

    公开(公告)日：1997-01-09

    申请号：DE69215461

    申请日：1992-09-03

    Applicant: SONY CORP

    Inventor： INO MASUMITSU

    IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/136

    Abstract: A liquid crystal display device includes a pair of opposed insulating substrates (50a, 50b) and a liquid crystal layer (51) sandwiched therebetween. One of the insulating substrates (50a) is formed with a first trench (105) for forming a thin film transistor (103) therein and a second trench (112) for forming a capacitor element (104) therein. The thin film transistor is constituted of a semiconductor layer (106) formed along an inner surface of the first trench, a gate insulating layer (107) formed on the semiconductor layer, and a gate electrode (108) formed on the gate insulating layer. The capacitor element (104) is constituted of a first electrode (113) formed along an inner surface of the second trench, a dielectric layer (114) formed on the first electrode, and a second electrode (115) formed on the dielectric layer. The first electrode (113) is formed integrally with the semiconductor layer (107), thereby increasing the aperture ratio. The first trench (105) has a tapering side surface, thereby assisting uniform ion implantation for the semiconductor layer (107). In the case that the substrate has a laminated structure of an insulating substrate (308) and an insulating layer (309), the etching rate of the substrate as a whole can be improved.

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