Abstract:
PROBLEM TO BE SOLVED: To improve the yield of a product by preventing defects in gate breakdown strength in a bottom gate type TFT. SOLUTION: The manufacturing method of a bottom gate type TFT 100A includes a step (1) of forming a gate electrode on a substrate, a step (2) of forming a gate insulating film on the gate electrode 2, a step (3) of forming a laminate made up of an protective insulating film 8 having a film thickness of 100 nm or smaller while an active-layer antecedent film (polysilicon film 7) and the protective insulating film 8 are laminated on the gate insulating film, a step (4) of implanting a dopant in an LDD region or in a source/drain region of the active-layer precursor film 8 through the protective insulating film 8, a step (5) of activating the implanted dopant and causing the other non-dopant part to be an active layer, a step (6) of modifying the quality of all or part of the protective insulating film 8, a step (7) of forming an interlayer insulating film on the modified protective insulating film 8, and a step (8) of forming a source/drain electrode on the interlayer insulating film.
Abstract:
PROBLEM TO BE SOLVED: To enable variations in offset values of a threshold voltage held by a source follower circuit to be corrected even though an offset value of every pixel existing within all over the whole pixel area is not stored into a memory.SOLUTION: A correcting circuit 44A, which performs a reset operation for correcting variations of the offset value of the threshold voltage held by the source follower circuit, is provided in every unit pixel 40A. Then, a voltage of an accumulation node N11 is reset to a voltage Vref+Vth before reading a signal by the reset operation performed by the correcting circuit 44A. Thus, the offset value included in a gate input voltage Vin at the time of reading the signal is canceled with the threshold voltage Vth of a transistor 42 for reading, because signal charge is accumulated relating to the accumulation node N11 with a state in which the offset value of the threshold voltage Vth of the transistor 42 for reading is added after the reset operation.
Abstract:
PROBLEM TO BE SOLVED: To provide a micro-miniature memory element which can be incorporated in a pixel of an active matrix type display device. SOLUTION: The memory element 1 includes a parallel connection of a thin film transistor TFT and a resistance change element ReRAM. The resistance change element ReRAM includes one conductive layer connected to an input terminal side of the thin film transistor TFT, the other conductive layer connected to an output terminal side of the thin film transistor TFT, and at least one oxide film layer disposed between both the conductive layers. When the film transistor TFT is in an OFF state in accordance with a voltage applied to the gate, the resistance change element ReRAM changes between a low resistance state LRS and a high resistance state HRS in accordance with a voltage applied thereto from the input terminal, and thereby corresponding binary data are written. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an information input device and information input/output device which are highly sensitive with good yield. SOLUTION: The information input device includes: a first substrate 2; a second substrate 3; a position detection portion 24; a pixel electrode 9; and a common electrode 7. The first substrate 2 and the second substrate 3 are formed oppositely to each other. Also, the position detection portion 24 comprises at least three or more sensor electrodes 19a, 19b and 16 and detects a position at which at least one of the first substrate 2 and the second substrate 3 bends by electrical change among the three sensor electrodes. Also, the pixel electrode 9 and the common electrode 7 are formed for each pixel, and the light quantity of light emitted from the first substrate 2 or the second substrate 3 is controlled by the change of the inter-electrode voltage or current of the pixel electrode 9 and the common electrode 7. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To prevent or restrain the occurrence of unintended contact between two sensor electrodes. SOLUTION: This liquid crystal display device includes: a color filter substrate 201; a TFT array substrate 202; a liquid crystal layer 203 between both substrates; a pixel electrode 210; a pixel short-circuit electrode 223; and a sensor driving circuit. The pixel short-circuit electrode 223 is disposed to come into contact with a plurality of adjacent pixel electrodes 210 due to external pressing. The sensor driving circuit applies voltage to a signal line electrically connected to one pixel electrode 210 among the plurality of pixel electrodes 210 where the pixel short-circuit electrode 223 comes into contact, thereby detecting a potential change of a second signal line electrically connected to a second pixel electrodes 210. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a display apparatus capable of increasing an S/N ratio of data, and highly accurately performing detection of the position of a detection subject and performing biometrics, and to provide an illumination apparatus. SOLUTION: In a light guiding board 302, an infrared light reflection layer 305 reflecting an infrared light IR from the rear surface side to the front surface side of a liquid crystal panel 200 is formed. The infrared light reflection layer 305 is provided at a location corresponding to an area in which photo sensor devices 32a are formed. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a light emitting element improved in yield when manufacturing it. SOLUTION: An opposite region opposing a gate electrode 23 is provided on at least any one of an anode electrode 21 or an electrode electrically connected to the anode electrode 21 and a cathode electrode 22 or an electrode electrically connected to the cathode electrode 22, via at least a part of region of a light receiving section 13. An electric field generated between the light receiving section 13 and a p+ layer 11 or an n+ layer 12 is released compared with the case where such the opposite region is not provided, and breakdown phenomenon hardly occurs. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To achieve improvement of image quality and position detecting accuracy in a display device. SOLUTION: Operation of a backlight 300 which outputs illuminating light from the side of one surface of a liquid crystal panel 200 to a display region PA is controlled based on light reception data obtained by an external light sensor element 32b. The operation of the backlight 300 is controlled based on the light reception data obtained by the external light sensor element 32b arranged in the display region PA. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To make an information input or an instruction possible based on a finger, a stylus pen or the like (an object to be detected) even when correspondence of brightness between a surrounding environment and a display surface is suddenly changed. SOLUTION: A display device includes a display part (a part of a liquid crystal panel 200) provided with a display surface 200A and capable of displaying information on the display surface 200A, and a photoluminescent part 60 capable of making light including visible light incident, absorbing a part of the incident light and outputting afterglow including non-visible light. An optical sensor (a photodiode in an optical sensor part 1) for detecting an object to be detected, which exists on the display surface 200A side, based on a non-visible light component in the output light from the photoluminescent part 60 is disposed in the display part. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a display device with a touch panel function which can detect an object on a display surface side by optical sensing always having satisfactory sensitivity without being affected by external environment and a display image state even when an optical sensor using a silicon thin film as a light receiving part. SOLUTION: In the display device 1a having a first substrate 21 on which a thin film transistor Tr for driving a pixel and the optical sensor S are provided, a second substrate 41 disposed opposite to the first substrate 21, a liquid crystal layer LC interposed between the first and the second substrates 21 and 41 and a backlight 5 provided on the outer side of the first substrate 21 and provided with a function that light from the backlight 5 is reflected by an object disposed to be close to the second substrate 41 side and the reflected light is detected by the optical sensor S, the backlight 5 emits visible light and UV light. COPYRIGHT: (C)2009,JPO&INPIT