公开(公告)号：JP2001332738A

公开(公告)日：2001-11-30

申请号：JP2000152356

申请日：2000-05-24

Applicant: SONY CORP ,  ST LCD KK

Inventor： YAMAGISHI MACHIO ,  FUJINO MASAHIRO ,  KOMATSU HIROSHI ,  MUNAKATA MASAKI

IPC: G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L27/32 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To prevent a point defect or a line defect of a thin film semiconductor device used for a display or the like. SOLUTION: In a thin film semiconductor device, a signal wiring 3, a gate wiring 2 and a thin film transistor TFT are formed on an insulating board to constitute a circuit. A semiconductor thin film 4 is extended along the signal wiring 3, and a distance from a contact hole CONS for electrically connecting the film 4 to the wiring 3 to a channel region Ch is lengthened. A protective member 2F of floating is arranged of the same material as that of a gate electrode along an edge of the film 4 disposed from the CONS to the channel region. The contact hole COND for connecting the drain region of the TFT to an intermediate wiring 3a and the contact hole CONP for connecting a pixel electrode to the wiring 3a are isolated from each other, and the former is arranged at a remote position from the TFT as compared with the latter. A part of the film 4 disposed under the wiring 3 via the CONS is extended at an outside in a width of at least 5 μm from an inner diameter of the CONS.

公开(公告)号：DE69617762T2

公开(公告)日：2002-08-08

申请号：DE69617762

申请日：1996-01-31

Applicant: SONY CORP

Inventor： HAYASHI YUTAKA ,  YAMAGISHI MACHIO

IPC: H01L21/8247 ,  G11C11/56 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: A non-volatile semiconductor memory device including a plurality of non-volatile memory cells and a plurality of reference cells provided for corresponding to storage states in the non-volatile memory cell, generating a reference current which is a current between two output currents of at least two reference cells or a current proportional to the current when data reading from the non-volatile memory cell, and comparing the reference current and a current from the non-volatile memory cell to read out a data stored in the non-volatile memory cell.

公开(公告)号：DE69226687T2

公开(公告)日：1999-04-15

申请号：DE69226687

申请日：1992-10-13

Applicant: SONY CORP

Inventor： OCHIAI AKIHIKO ,  HASHIMOTO MAKOTO ,  MATSUSHITA TAKESHI ,  YAMAGISHI MACHIO ,  SATO HIROSHI ,  SHIMANOE MUNEHARU

IPC: H01L21/28 ,  H01L21/762 ,  H01L21/8247 ,  H01L21/84 ,  H01L21/76

Abstract: The present invention concerns a method of manufacturing a SOI substrate of forming a thin film of a silicon layer on an insulator substrate by bonding a substrate, wherein the method comprises successively: a step of forming an etching stopping layer on the surface of a silicon substrate, a step of forming an epitaxially grown silicon layer on said etching stopping layer, a step of bonding said silicon substrate formed with said silicon layer with another substrate as the insulator substrate, a step of grinding said silicon substrate from the rear face and etching it till said etching stopping layer is exposed and a step of removing said etching stopping layer.

公开(公告)号：DE69617762D1

公开(公告)日：2002-01-24

申请号：DE69617762

申请日：1996-01-31

Applicant: SONY CORP

Inventor： HAYASHI YUTAKA ,  YAMAGISHI MACHIO

IPC: H01L21/8247 ,  G11C11/56 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: A non-volatile semiconductor memory device including a plurality of non-volatile memory cells and a plurality of reference cells provided for corresponding to storage states in the non-volatile memory cell, generating a reference current which is a current between two output currents of at least two reference cells or a current proportional to the current when data reading from the non-volatile memory cell, and comparing the reference current and a current from the non-volatile memory cell to read out a data stored in the non-volatile memory cell.

公开(公告)号：DE69226687D1

公开(公告)日：1998-09-24

申请号：DE69226687

申请日：1992-10-13

Applicant: SONY CORP

Inventor： OCHIAI AKIHIKO ,  HASHIMOTO MAKOTO ,  MATSUSHITA TAKESHI ,  YAMAGISHI MACHIO ,  SATO HIROSHI ,  SHIMANOE MUNEHARU

IPC: H01L21/28 ,  H01L21/762 ,  H01L21/8247 ,  H01L21/84 ,  H01L21/76

Abstract: The present invention concerns a method of manufacturing a SOI substrate of forming a thin film of a silicon layer on an insulator substrate by bonding a substrate, wherein the method comprises successively: a step of forming an etching stopping layer on the surface of a silicon substrate, a step of forming an epitaxially grown silicon layer on said etching stopping layer, a step of bonding said silicon substrate formed with said silicon layer with another substrate as the insulator substrate, a step of grinding said silicon substrate from the rear face and etching it till said etching stopping layer is exposed and a step of removing said etching stopping layer.

公开(公告)号：DE69522412T2

公开(公告)日：2002-05-29

申请号：DE69522412

申请日：1995-11-09

Applicant: SONY CORP

Inventor： HAYASHI YUTAKA ,  YAMAGISHI MACHIO

IPC: G11C17/00 ,  G11C7/06 ,  G11C16/04 ,  G11C16/06 ,  G11C16/28

Abstract: A rewritable nonvolatile semiconductor memory device having a plurality of memory cells which are electrically and reversably variable in threshold values and one pair of reference cells, provided for each predetermined number of memory cells, having the same cross-sectional structure as the memory cells, the pair of reference cells having written in them data of opposite phases, and, at the time of reading, the currents of the pair of reference cells being combined to produce a reference current and the data being determined by comparing this with the signal current of the memory cell.

公开(公告)号：DE69522412D1

公开(公告)日：2001-10-04

申请号：DE69522412

申请日：1995-11-09

Applicant: SONY CORP

Inventor： HAYASHI YUTAKA ,  YAMAGISHI MACHIO

IPC: G11C17/00 ,  G11C7/06 ,  G11C16/04 ,  G11C16/06 ,  G11C16/28

Abstract: A rewritable nonvolatile semiconductor memory device having a plurality of memory cells which are electrically and reversably variable in threshold values and one pair of reference cells, provided for each predetermined number of memory cells, having the same cross-sectional structure as the memory cells, the pair of reference cells having written in them data of opposite phases, and, at the time of reading, the currents of the pair of reference cells being combined to produce a reference current and the data being determined by comparing this with the signal current of the memory cell.

公开(公告)号：JP2003241156A

公开(公告)日：2003-08-27

申请号：JP2002043007

申请日：2002-02-20

Applicant: SONY CORP

Inventor： YAMAGISHI MACHIO

IPC: G01R31/00 ,  G02F1/13 ,  G02F1/133

Abstract: PROBLEM TO BE SOLVED: To provide an inspection device capable of inspecting a liquid crystal display device in a shorter time without changing fundamental characteristics of liquid cells, and inspection method thereby. SOLUTION: An inspection device is provided with a voltage generating part 11 and a temperature control part 12. The voltage generating part 11 generates a first voltage which is higher than a driving voltage and a second voltage which is higher than the first voltage and which is capable of breaking liquid crystal cells 23 when it is applied continuously to the cells for a prescribed time or more for only a prescribed time which does not bring the liquid crystal cells 23 into breakdown and generates the first voltage and the second voltage in a prescribed cycle and applies the voltages to a liquid crystal display device 2. The temperature control part 12 controls the liquid crystal display device 2 at a prescribed temperature when the prescribed voltages are applied to the display device 2 by the voltage generating part 11. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2002196702A

公开(公告)日：2002-07-12

申请号：JP2000391750

申请日：2000-12-25

Applicant: SONY CORP

Inventor： YAMAGISHI MACHIO

IPC: G02F1/1335 ,  G02F1/13357 ,  G09F9/00 ,  G09F9/30

Abstract: PROBLEM TO BE SOLVED: To provide an image display device of a hybrid type which does not require a back light. SOLUTION: The image display device includes a pair of front and rear substrates 1 and 2 joined to each other across a prescribed spacing and an electro-optic material 3 held in this spacing, has pixels arranged in a matrix form and displays images by reflecting the external light from the front side toward the front side and radiating the emitted light from the rear side toward the front side. The respective pixels are flatly divided to a reflection region where the images are displayed by reflecting the incident external light from the front side and a light emission region where the images are displayed by radiating the emitted light from the rear side toward the front side. The reflection region comprises electrodes 10 and 122 formed on a pair of the front and rear substrates 1, the electro-optic material 3 grasped between these electrodes and a reflection layer 8 formed on the substrate on the rear side. The light emission layer consists of s luminous element OLED which exists between the electro-optic material 3 and the substrate 2 on the rear side and is formed with laminated layers holding the light emission layer 202 in-between by the electrodes 203 an 201 from above the below on the substrate 2 on the rear side.

公开(公告)号：JP2002196688A

公开(公告)日：2002-07-12

申请号：JP2000391751

申请日：2000-12-25

Applicant: SONY CORP

Inventor： YAMAGISHI MACHIO

IPC: G02F1/1335 ,  G02F1/13357 ,  G09F9/00 ,  G09F9/30

Abstract: PROBLEM TO BE SOLVED: To make the whole display module thinner by making a planer type backlight thinner used for a hybrid type display panel combining a reflection area with a transmission area in each pixel. SOLUTION: The picture display device is provided with pixels PXL arranged in a matrix form, and comprises a display panel for transmitting illuminating light from the back face side reflecting the external light from the front face side, and a planar type backlight which is superimposed the back face side of the display panel and emits the illuminating light. Each pixel PXL is divided into the reflection area R for reflecting the external light made incident from the front face side of the display panel and displays a picture, and a transmission area T for transmitting the illuminating light made incident from the back face side of the display panel. The backlight is of a planar type in which a laminated layer holding a light emitting layer 203 between electrodes 204, 202 from the top and bottom on a substrate 201, and makes the illuminating light emitted from the light emitting layer 203 incident to the transmission area T of each pixel PXL when a voltage is applied across the electrodes 204, 202.