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    Resonator, and method of forming resonator
    1.
    发明专利
    Resonator, and method of forming resonator 审中-公开
    谐振器和形成谐振器的方法

    公开(公告)号：JP2010022000A

    公开(公告)日：2010-01-28

    申请号：JP2009161062

    申请日：2009-07-07

    Applicant: Commissariat A L'energie Atomique ,  St Microelectronics Sa ,  エス テ マイクロエレクトロニクス エス アー ,  コミサリア ア エナジー アトミック

    Inventor： DURAND CEDRIC ,  CASSET FABRICE

    IPC: H03H9/24 ,  B81B3/00 ,  B81C1/00 ,  H03H3/007 ,  H03H3/013

    CPC classification number: H03H9/02448 ,  H03H3/0076 ,  H03H9/2436 ,  H03H9/2463 ,  H03H2009/0237 ,  H03H2009/02496 ,  H03H2009/2442

    Abstract: PROBLEM TO BE SOLVED: To provide a resonator that overcomes a marked drop in its frequency during a rise in temperature, and to provide a method of forming the resonator. SOLUTION: The resonator is a bulk-mode resonator including a resonant element 20 that includes a bulk 21 and a columnar portion 24. The columnar portion 24 is formed of a Young's modulus material having a temperature coefficient sign of the bulk material and a temperature coefficient of an opposite sign. Furthermore, the columnar portion 24 is dispersed such that it is vertically long with respect to the vibration direction of a bulk wave, and intercepts the resonant element 20 in the expansion/compression direction of the resonant element 20 to have a continuous part of the bulk 21. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种谐振器，其在温度升高期间克服其频率的显着下降，并提供形成谐振器的方法。 解决方案：谐振器是包括谐振元件20的体模式谐振器，谐振元件20包括主体21和柱状部分24.柱状部分24由具有散装材料的温度系数符号的杨氏模量材料形成， 相反符号的温度系数。 此外，柱状部分24相对于体波的振动方向被分散成垂直长度，并且在共振元件20的膨胀/压缩方向上截获谐振元件20以具有连续部分的体积 21.版权所有（C）2010，JPO＆INPIT

    5.
    发明专利
    未知

    公开(公告)号：DE602005001245D1

    公开(公告)日：2007-07-12

    申请号：DE602005001245

    申请日：2005-09-15

    Applicant: ST MICROELECTRONICS SA ,  COMMISSARIAT ENERGIE ATOMIQUE

    Inventor： ANCEY PASCAL ,  ABELE NICOLAS ,  CASSET FABRICE

    IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate (10), comprises : (A) some source and drain zones (11, 12) separated by a channel zone (13) extending in a first direction from the source to the drain and in a second direction perpendicular to the first direction; (B) a conducting gate beam (16) placed at least above the channel zone extending in the second direction between some support points placed on the substrate at each side of the channel zone. The surface of the channel zone is hollow and has a form similar to that of the gate beam when it is in maximum deflection towards the channel zone. Independent claims are also included for : (A) a circuit oscillator incorporating this transistor; (B) the fabrication of this transistor with a deformable gate.

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