公开(公告)号：FR2814855A1

公开(公告)日：2002-04-05

申请号：FR0012596

申请日：2000-10-03

Applicant: ST MICROELECTRONICS SA

Inventor： DEFIVES DOMINIQUE ,  NOBLANC OLIVIER ,  COLLARD EMMANUEL

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/28 ,  H01L21/306

Abstract: A Schottky junction presenting a stable live gate height of the order of 0.8 to 1 volt on a layer of silicon carbide incorporates a layer of refractory metal nitride on this layer of silicon carbide. An Independent claim is included for a method for the formation of such a Schottky junction on a silicon carbide substrate.

公开(公告)号：FR2814856B1

公开(公告)日：2003-07-11

申请号：FR0012601

申请日：2000-10-03

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  DEFIVES DOMINIQUE ,  NOBLANC OLIVIER

IPC: H01L21/04 ,  H01L21/329 ,  H01L29/45 ,  H01L29/872

公开(公告)号：FR2814855B1

公开(公告)日：2003-10-31

申请号：FR0012596

申请日：2000-10-03

Applicant: ST MICROELECTRONICS SA

Inventor： DEFIVES DOMINIQUE ,  NOBLANC OLIVIER ,  COLLARD EMMANUEL

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/872 ,  H01L21/28 ,  H01L21/306

公开(公告)号：FR2814856A1

公开(公告)日：2002-04-05

申请号：FR0012601

申请日：2000-10-03

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  DEFIVES DOMINIQUE ,  NOBLANC OLIVIER

IPC: H01L21/04 ,  H01L21/329 ,  H01L29/45 ,  H01L29/872

Abstract: A method for the production of an ohmic contact on a substrate of silicon carbide consists of depositing a layer (2) of titanium silicide (TiSi2) on the substrate (1) and annealing at a temperature of 500 - 800 deg C. An Independent claim is included for the production of a Schottky diode by this method.