公开(公告)号：FR2823377A1

公开(公告)日：2002-10-11

申请号：FR0104693

申请日：2001-04-06

Applicant: ST MICROELECTRONICS SA

Inventor： TORRES JOAQUIM ,  AMAL VINCENT ,  FRACY ALEXIS

IPC: H01L21/3205 ,  H01L23/522 ,  H01L45/00

Abstract: Formation of a conducting line (L) for high frequency or elevated currents, realized above a given part of a massive substrate (20) within which are formed other elements, comprises: (1) hollowing out a slice in the substrate; (2) forming an insulated zone (26) in the slice; and (3) forming the conducting line to the vertical of the insulated zone. An Independent claim is also included for a conducting line for high frequency or elevated currents in an integrated circuit chip.

公开(公告)号：FR2823377B1

公开(公告)日：2004-07-16

申请号：FR0104693

申请日：2001-04-06

Applicant: ST MICROELECTRONICS SA

Inventor： TORRES JOAQUIM ,  AMAL VINCENT ,  FRACY ALEXIS

IPC: H01L21/3205 ,  H01L23/522 ,  H01L45/00