公开(公告)号：WO2006054024A3

公开(公告)日：2007-02-01

申请号：PCT/FR2005050959

申请日：2005-11-17

Applicant: ST MICROELECTRONICS SA ,  HERNANDEZ CAROLINE

Inventor： HERNANDEZ CAROLINE

IPC: H01L21/68 ,  H01L21/78

CPC classification number: H01L21/6835 ,  H01L21/78 ,  H01L25/50 ,  H01L31/18 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention concerns a method for thinning a first semiconductor wafer (1) from a first side (12), which consists in applying, on the second side of the first wafer, a second wafer (3) with an interposed photoresist layer (2).

Abstract translation: 本发明涉及一种用于从第一侧（12）减薄第一半导体晶片（1）的方法，该方法包括在第一晶片的第二侧上施加具有中间光刻胶层（2）的第二晶片（3） 。

公开(公告)号：FR2795868B1

公开(公告)日：2003-05-16

申请号：FR9908811

申请日：1999-07-02

Applicant: ST MICROELECTRONICS SA

Inventor： ALIEU JEROME ,  HERNANDEZ CAROLINE ,  HAOND MICHEL

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/335 ,  H01L29/78

公开(公告)号：FR2878076B1

公开(公告)日：2007-02-23

申请号：FR0452661

申请日：2004-11-17

Applicant: ST MICROELECTRONICS SA

Inventor： HERNANDEZ CAROLINE

IPC: H01L21/683 ,  H01L21/302 ,  H01L31/18

Abstract: A method for processing a first semiconductor wafer having a first surface and a second surface, by placing, on the second surface of the first wafer, a second wafer with an interposed resist layer, and thinning down the first surface of the first semiconductor wafer.

公开(公告)号：FR2878076A1

公开(公告)日：2006-05-19

申请号：FR0452661

申请日：2004-11-17

Applicant: ST MICROELECTRONICS SA

Inventor： HERNANDEZ CAROLINE

IPC: H01L21/683 ,  H01L21/302 ,  H01L31/18

Abstract: L'invention concerne un procédé d'amincissement d'une première plaquette semiconductrice (1) depuis une première face (12), consistant à rapporter, sur la deuxième face de la première plaquette, une deuxième plaquette (3) avec interposition d'une couche (2) de résine photosensible.

公开(公告)号：FR2795868A1

公开(公告)日：2001-01-05

申请号：FR9908811

申请日：1999-07-02

Applicant: ST MICROELECTRONICS SA

Inventor： ALIEU JEROME ,  HERNANDEZ CAROLINE ,  HAOND MICHEL

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/335 ,  H01L29/78

Abstract: Germanium content in side regions (3-1, 3-2) of the gate (3), increases towards the sides of the gate facing the drain and source regions (7, 8). An Independent claim is included for the method of making the gate, in which an external layer of germanium is deposited on sides of the gate, and a cyclic heating process, causing diffusion of germanium into the gate. The layer is then removed.