公开(公告)号：DE69425397T2

公开(公告)日：2001-03-01

申请号：DE69425397

申请日：1994-05-09

Applicant: ST MICROELECTRONICS SA

Inventor： AYELA CHRISTOPHE ,  LETURCO PHILIPPE ,  JALADE JEAN ,  SANCHEZ JEAN-LOUIS

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L29/739 ,  H01L29/78 ,  H01L29/86 ,  H02H9/02

Abstract: The present invention relates to a current limiting dipole component, comprising a substrate (11) with a first type of conductivity; separate wells (21, 22) with the second type of conductivity; a first annular region (34) with the first type of conductivity in each well; a second annular region (38) with the first type of conductivity having a low doping level between the periphery of each first annular region and the periphery of each well; an insulating layer (42) on the second annular region and the flush surfaces of the substrate; a first metallisation (44) over the upper surface of the component; and a second metallisation over the lower surface of the component.

公开(公告)号：DE69425397D1

公开(公告)日：2000-09-07

申请号：DE69425397

申请日：1994-05-09

Applicant: ST MICROELECTRONICS SA

Inventor： AYELA CHRISTOPHE ,  LETURCO PHILIPPE ,  JALADE JEAN ,  SANCHEZ JEAN-LOUIS

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L29/739 ,  H01L29/78 ,  H01L29/86 ,  H02H9/02

Abstract: The present invention relates to a current limiting dipole component, comprising a substrate (11) with a first type of conductivity; separate wells (21, 22) with the second type of conductivity; a first annular region (34) with the first type of conductivity in each well; a second annular region (38) with the first type of conductivity having a low doping level between the periphery of each first annular region and the periphery of each well; an insulating layer (42) on the second annular region and the flush surfaces of the substrate; a first metallisation (44) over the upper surface of the component; and a second metallisation over the lower surface of the component.