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公开(公告)号:FR2801426A1
公开(公告)日:2001-05-25
申请号:FR9914486
申请日:1999-11-18
Applicant: ST MICROELECTRONICS SA
Inventor: DELPECH PHILIPPE , ARNAL VINCENT , LIS SANDRA
IPC: H01L21/02 , H01L21/314 , H01L29/92 , H01G4/08 , H01G4/33
Abstract: Capacitive structure (20) on a Si substrate (10) comprises first (1) and second (3) electrode layers and dielectric layer (2) comprising a homogeneous combination of molecules of at least two dielectrics with permittivities ( iota ) behaving oppositely as a function of electric field. The proportion of each dielectric is empirically chosen so that capacitance varies as little as possible with voltage. The dielectric of the dielectric layer (2) has formula SiOxNy, where x is different from y. The material of the first (1) and second (2) electrode layers is selected from aluminum, copper, tungsten, titanium, titanium nitride and their alloys. Independent claims are given for: (a) a dielectric comprising a homogeneous combination of molecules of at least two dielectrics with permittivities ( iota ) behaving oppositely as a function of electric field, and where the proportion of each dielectric in the combination is empirically chosen such that the combination has a permittivity whose variation as a function of electric field is as low as possible; and (b) a method of production of the above capacitive structure.
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公开(公告)号:FR2801426B1
公开(公告)日:2002-10-11
申请号:FR9914486
申请日:1999-11-18
Applicant: ST MICROELECTRONICS SA
Inventor: DELPECH PHILIPPE , ARNAL VINCENT , LIS SANDRA
IPC: H01L21/02 , H01L21/314 , H01L29/92 , H01G4/08 , H01G4/33
Abstract: An integrated circuit capacitor includes a substrate, a first metal electrode on the substrate, and a dielectric layer on the first metal electrode. The dielectric layer includes a homogeneous combination of at least two dielectric materials having permittivities varying in an opposite way based upon an electric field, with a proportion of each dielectric material being chosen so that the integrated circuit capacitor has a desired voltage linearity. A second metal electrode is on the dielectric layer.
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