公开(公告)号：FR2793350B1

公开(公告)日：2003-08-15

申请号：FR9905730

申请日：1999-05-03

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN LUC

IPC: H01L21/60 ,  H01L23/04 ,  H01L23/10 ,  H01L23/367

Abstract: The invention concerns a package for a semiconductor chip (2), consisting of a rigid cap (3) capable of being directly mounted on a first surface of the chip and comprising at least a plate (4) covering the chip and a base (5) designed to be fixed to a printed circuit wafer, the base and the plate being linked by a connecting wall (6).

公开(公告)号：FR2878077B1

公开(公告)日：2007-05-11

申请号：FR0452671

申请日：2004-11-18

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN LUC

IPC: H01L23/38

Abstract: A self-cooled electronic component comprising a vertical monolithic circuit, in which the vertical monolithic circuit is electrically connected in series with a Peltier cooler so that the D.C. current flowing through the circuit supplies the cooler and in which the circuit and the cooler are placed against each other so that the cold surface of the cooler is in thermal contact with the circuit.

公开(公告)号：FR2857506A1

公开(公告)日：2005-01-14

申请号：FR0350325

申请日：2003-07-11

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN LUC ,  COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L27/07 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L21/329

Abstract: The diode is formed in a semiconductor layer (32) that is weakly doped and resting on a substrate (31) that is strongly doped. The substrate has an annular region (35) that is more strongly doped than the layer and weakly doped than the substrate. Another annular region (39) extends to a surface of the region (35). An electrode with a thin layer forms a Schottky junction with the layer and rests on a portion of the region (39). An independent claim is also included for a process of forming a power diode on a substrate of single-crystal silicon.

公开(公告)号：FR2878077A1

公开(公告)日：2006-05-19

申请号：FR0452671

申请日：2004-11-18

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN LUC

IPC: H01L23/38

Abstract: L'invention concerne un composant électronique auto-refroidi comprenant un circuit monolithique vertical (30) , dans lequel le circuit monolithique vertical est monté électriquement en série avec un refroidisseur à effet Peltier (50) de façon que le courant continu traversant le circuit alimente le refroidisseur et dans lequel le circuit et le refroidisseur sont accolés de façon que la face froide du refroidisseur soit en contact thermique avec le circuit.

公开(公告)号：FR2793350A1

公开(公告)日：2000-11-10

申请号：FR9905730

申请日：1999-05-03

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN LUC

IPC: H01L21/60 ,  H01L23/04 ,  H01L23/10 ,  H01L23/367

Abstract: The invention concerns a package for a semiconductor chip (2), consisting of a rigid cap (3) capable of being directly mounted on a first surface of the chip and comprising at least a plate (4) covering the chip and a base (5) designed to be fixed to a printed circuit wafer, the base and the plate being linked by a connecting wall (6).