公开(公告)号：FR2857506A1

公开(公告)日：2005-01-14

申请号：FR0350325

申请日：2003-07-11

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN LUC ,  COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L27/07 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L21/329

Abstract: The diode is formed in a semiconductor layer (32) that is weakly doped and resting on a substrate (31) that is strongly doped. The substrate has an annular region (35) that is more strongly doped than the layer and weakly doped than the substrate. Another annular region (39) extends to a surface of the region (35). An electrode with a thin layer forms a Schottky junction with the layer and rests on a portion of the region (39). An independent claim is also included for a process of forming a power diode on a substrate of single-crystal silicon.

公开(公告)号：FR2914497B1

公开(公告)日：2009-06-12

申请号：FR0754221

申请日：2007-04-02

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL ,  LHORTE ANDRE ,  POVEDA PATRICK

IPC: H01L23/66

Abstract: A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.

公开(公告)号：FR2914497A1

公开(公告)日：2008-10-03

申请号：FR0754221

申请日：2007-04-02

Applicant: ST MICROELECTRONICS SA

Inventor： SIMONNET JEAN MICHEL ,  LHORTE ANDRE ,  POVEDA PATRICK

IPC: H01L23/66

Abstract: L'invention concerne une structure comprenant au moins deux composants voisins (D1, D2), susceptibles de fonctionner à des hautes fréquences, formés dans un substrat mince de silicium s'étendant sur un support de silicium (5) et séparé de celui-ci par une couche isolante (7), les composants (D1, D2) étant séparés latéralement par des régions isolantes (11). Le support de silicium (5) a, au moins au voisinage de sa partie en contact avec la couche isolante (7), une résistivité supérieure ou égale à 1000 ohms.cm.

公开(公告)号：FR2803103B1

公开(公告)日：2003-08-29

申请号：FR9916490

申请日：1999-12-24

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L21/329 ,  H01L29/24 ,  H01L29/872

公开(公告)号：DE60034863D1

公开(公告)日：2007-06-28

申请号：DE60034863

申请日：2000-12-22

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L29/872 ,  H01L21/329 ,  H01L29/24

公开(公告)号：DE602004016918D1

公开(公告)日：2008-11-20

申请号：DE602004016918

申请日：2004-07-09

Applicant: ST MICROELECTRONICS SA

Inventor： MORAND JEAN-LUC ,  COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L29/872 ,  H01L21/329 ,  H01L27/07 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861

Abstract: The diode is formed in a semiconductor layer (32) that is weakly doped and resting on a substrate (31) that is strongly doped. The substrate has an annular region (35) that is more strongly doped than the layer and weakly doped than the substrate. Another annular region (39) extends to a surface of the region (35). An electrode with a thin layer forms a Schottky junction with the layer and rests on a portion of the region (39). An independent claim is also included for a process of forming a power diode on a substrate of single-crystal silicon.

公开(公告)号：DE69609905T2

公开(公告)日：2001-01-18

申请号：DE69609905

申请日：1996-06-18

Applicant: ST MICROELECTRONICS SA

Inventor： LHORTE ANDRE

IPC: H01L29/872 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861

Abstract: The monolithic structure includes a vertical high speed diode and at least one other vertical component. The second vertical component may also be a diode, e.g. a junction diode or a Schottky diode. The diode has an N-type substrate (1) in one of the faces of which there is a continuous region (5,14) of N+ type material. In the other face of the substrate there is a discontinuous region (6,15) of P+ type material. The back surface of the structure is coated with a single metallised layer (C). The structure is then encased in an insulating wall (8).

公开(公告)号：FR2803103A1

公开(公告)日：2001-06-29

申请号：FR9916490

申请日：1999-12-24

Applicant: ST MICROELECTRONICS SA

Inventor： COLLARD EMMANUEL ,  LHORTE ANDRE

IPC: H01L21/329 ,  H01L29/24 ,  H01L29/872

公开(公告)号：DE69609905D1

公开(公告)日：2000-09-28

申请号：DE69609905

申请日：1996-06-18

Applicant: ST MICROELECTRONICS SA

Inventor： LHORTE ANDRE

IPC: H01L29/872 ,  H01L21/8222 ,  H01L27/06 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861

Abstract: The monolithic structure includes a vertical high speed diode and at least one other vertical component. The second vertical component may also be a diode, e.g. a junction diode or a Schottky diode. The diode has an N-type substrate (1) in one of the faces of which there is a continuous region (5,14) of N+ type material. In the other face of the substrate there is a discontinuous region (6,15) of P+ type material. The back surface of the structure is coated with a single metallised layer (C). The structure is then encased in an insulating wall (8).